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Nitrogen Diffusion and Interaction with Oxygen in Si
Nitrogen Diffusion and Interaction with Oxygen in Si
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Nitrogen Diffusion and Interaction with Oxygen in Si

Voronkov, Vladimir V. ; Falster, Robert J.

Solid state phenomena, 2004-01, Vol.95-96, p.83-92 [Periódico revisado por pares]

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2
Dislocation Locking in Silicon by Oxygen and Oxygen Transport at Low Temperatures
Dislocation Locking in Silicon by Oxygen and Oxygen Transport at Low Temperatures
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Dislocation Locking in Silicon by Oxygen and Oxygen Transport at Low Temperatures

Wilshaw, Peter R. ; Senkader, Semih ; Falster, Robert J. ; Giannattasio, A.

Solid state phenomena, 2004-01, Vol.95-96, p.43-52 [Periódico revisado por pares]

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3
Structure and Electronic Properties of Nitrogen Defects in Silicon
Structure and Electronic Properties of Nitrogen Defects in Silicon
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Structure and Electronic Properties of Nitrogen Defects in Silicon

Öberg, Sven ; Briddon, Patrick R. ; Goss, Jonathan P. ; Jones, R. ; Hahn, I.

Solid state phenomena, 2004-01, Vol.95-96, p.93-98 [Periódico revisado por pares]

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4
A Theoretical Study of Copper Contaminated Dislocations in Silicon
A Theoretical Study of Copper Contaminated Dislocations in Silicon
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A Theoretical Study of Copper Contaminated Dislocations in Silicon

Fujita, N. ; Öberg, Sven ; Blumenau, A.T. ; Briddon, Patrick R. ; Jones, R.

Solid state phenomena, 2008-01, Vol.131-133, p.259-264 [Periódico revisado por pares]

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5
Radiation-Induced Defect Reactions in Cz-Si Crystals Contaminated with Cu
Radiation-Induced Defect Reactions in Cz-Si Crystals Contaminated with Cu
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Radiation-Induced Defect Reactions in Cz-Si Crystals Contaminated with Cu

Peaker, Anthony R. ; Medvedeva, I.F. ; Gusakov, Vasilii E. ; Markevich, Vladimir P. ; Murin, L.I. ; Svensson, Bengt Gunnar

Solid state phenomena, 2008-01, Vol.131-133, p.363-368 [Periódico revisado por pares]

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6
The Electrical and Optical Properties of Point and Extended Defects in Silicon Arising from Oxygen Precipitation
The Electrical and Optical Properties of Point and Extended Defects in Silicon Arising from Oxygen Precipitation
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The Electrical and Optical Properties of Point and Extended Defects in Silicon Arising from Oxygen Precipitation

Jones, R.

Solid state phenomena, 2008-01, Vol.131-133, p.225-232 [Periódico revisado por pares]

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7
Impact of Iron and Molybdenum in Mono and Multicrystalline Float-Zone Silicon Solar Cells
Impact of Iron and Molybdenum in Mono and Multicrystalline Float-Zone Silicon Solar Cells
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Impact of Iron and Molybdenum in Mono and Multicrystalline Float-Zone Silicon Solar Cells

Riepe, Stephan ; Arumughan, J. ; Geerligs, L.J. ; Warta, Wilhelm ; Manshanden, P. ; Coletti, Gianluca ; Kopecek, R. ; Swanson, C.

Solid state phenomena, 2008-01, Vol.131-133, p.15-20 [Periódico revisado por pares]

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8
Understanding and Reducing the Boron-Oxygen-Related Performance Degradation in Czochralski Silicon Solar Cells
Understanding and Reducing the Boron-Oxygen-Related Performance Degradation in Czochralski Silicon Solar Cells
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Understanding and Reducing the Boron-Oxygen-Related Performance Degradation in Czochralski Silicon Solar Cells

Bothe, Karsten ; Hezel, Rudolf ; Schmidt, Jan

Solid state phenomena, 2004-01, Vol.95-96, p.223-228 [Periódico revisado por pares]

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9
Depth Resolved Defect Analysis by Micro-Raman Investigations of Plasma Hydrogenated Czochralski Silicon Wafers
Depth Resolved Defect Analysis by Micro-Raman Investigations of Plasma Hydrogenated Czochralski Silicon Wafers
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Depth Resolved Defect Analysis by Micro-Raman Investigations of Plasma Hydrogenated Czochralski Silicon Wafers

Fahrner, Wolfgang R. ; Barbot, Jean François ; Huang, Yue Long ; Job, Reinhart ; Ulyashin, Alexander G. ; Ma, Yue ; Beaufort, Marie France

Solid state phenomena, 2004-01, Vol.95-96, p.141-148 [Periódico revisado por pares]

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10
Primary Defects in n-Type Irradiated Germanium: A First-Principles Investigation
Primary Defects in n-Type Irradiated Germanium: A First-Principles Investigation
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Primary Defects in n-Type Irradiated Germanium: A First-Principles Investigation

Öberg, Sven ; Carvalho, A. ; Briddon, Patrick R. ; Janke, C. ; Jones, R.

Solid state phenomena, 2008-01, Vol.131-133, p.253-258 [Periódico revisado por pares]

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