Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Semiconducting and other major properties of gallium arsenideBlakemore, J SJournal of applied physics, 1982-10, Vol.53 (10), p.R123-R181 [Periódico revisado por pares]Texto completo disponível |
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2 |
Material Type: Artigo
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Experimental requirements for quantitative mapping of midgap flaw concentration in semi-insulating GaAs wafers by measurement of near-infrared transmittanceDOBRILLA, P ; BLAKEMORE, J. SJournal of applied physics, 1985-07, Vol.58 (1), p.208-218 [Periódico revisado por pares]Woodbury, NY: American Institute of PhysicsTexto completo disponível |
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3 |
Material Type: Artigo
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Mid-infrared dispersion of the refractive index and reflectivity for GaAsBLAKEMORE, J. SJournal of applied physics, 1987-12, Vol.62 (11), p.4528-4532 [Periódico revisado por pares]Woodbury, NY: American Institute of PhysicsTexto completo disponível |
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4 |
Material Type: Artigo
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Transient photoconductivity measurements in semi-insulating GaAs. I: An analog approachKREMER, R. E ; ARIKAN, M. C ; ABELE, J. C ; BLAKEMORE, J. SJournal of applied physics, 1987-09, Vol.62 (6), p.2424-2431 [Periódico revisado por pares]Woodbury, NY: American Institute of PhysicsTexto completo disponível |
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5 |
Material Type: Artigo
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Transient photoconductivity measurements in semi-insulating GaAs II: A digital approachABELE, J. C ; KREMER, R. E ; BLAKEMORE, J. SJournal of applied physics, 1987-09, Vol.62 (6), p.2432-2438 [Periódico revisado por pares]Woodbury, NY: American Institute of PhysicsTexto completo disponível |
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6 |
Material Type: Artigo
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Mapping of GaAs wafers by quantitative infrared microscopyDOBRILLA, P ; BLAKEMORE, J. SJournal of applied physics, 1987-02, Vol.61 (4), p.1442-1448 [Periódico revisado por pares]Woodbury, NY: American Institute of PhysicsTexto completo disponível |
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7 |
Material Type: Artigo
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Melt-grown p-type GaAs with iron dopingTANG, R.-S ; SABAN, S. B ; BLAKEMORE, J. S ; GRAY, M. LJournal of applied physics, 1993-06, Vol.73 (11), p.7416-7421 [Periódico revisado por pares]Woodbury, NY: American Institute of PhysicsTexto completo disponível |
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8 |
Material Type: Artigo
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Compensation assessment in «undoped» high-resistivity GaAsTANG, R.-S ; SARGENT, L ; BLAKEMORE, J. SJournal of applied physics, 1989-07, Vol.66 (1), p.256-261 [Periódico revisado por pares]Woodbury, NY: American Institute of PhysicsTexto completo disponível |
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9 |
Material Type: Artigo
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Factors affecting the spatial distribution of the principal midgap donor in semi-insulating gallium arsenide wafersBLAKEMORE, J. S ; DOBRILLA, PJournal of applied physics, 1985-07, Vol.58 (1), p.204-207 [Periódico revisado por pares]Woodbury, NY: American Institute of PhysicsTexto completo disponível |
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10 |
Material Type: Artigo
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Iron doped bulk semi-insulating GaAsGRAY, M. L ; PETERSON, L ; TANG, R.-S ; SABAN, S. B ; BLAKEMORE, J. SJournal of applied physics, 1993-04, Vol.73 (7), p.3319-3325 [Periódico revisado por pares]Woodbury, NY: American Institute of PhysicsTexto completo disponível |