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Physics
| Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
|---|---|---|---|
| 1 |
Material Type: Artigo
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Semiconducting and other major properties of gallium arsenideBlakemore, J SJournal of applied physics, 1982-10, Vol.53 (10), p.R123-R181 [Periódico revisado por pares]Texto completo disponível |
| 2 |
Material Type: Artigo
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Quantum dot mediated imaging of atherosclerosisJayagopal, Ashwath ; Su, Yan Ru ; Blakemore, John L ; Linton, MacRae F ; Fazio, Sergio ; Haselton, Frederick RNanotechnology, 2009-04, Vol.20 (16), p.165102-165102 [Periódico revisado por pares]England: IOP PublishingTexto completo disponível |
| 3 |
Material Type: Artigo
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Experimental requirements for quantitative mapping of midgap flaw concentration in semi-insulating GaAs wafers by measurement of near-infrared transmittanceDOBRILLA, P ; BLAKEMORE, J. SJournal of applied physics, 1985-07, Vol.58 (1), p.208-218 [Periódico revisado por pares]Woodbury, NY: American Institute of PhysicsTexto completo disponível |
| 4 |
Material Type: Artigo
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Mid-infrared dispersion of the refractive index and reflectivity for GaAsBLAKEMORE, J. SJournal of applied physics, 1987-12, Vol.62 (11), p.4528-4532 [Periódico revisado por pares]Woodbury, NY: American Institute of PhysicsTexto completo disponível |
| 5 |
Material Type: Artigo
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Temperature dependence of local vibrational mode optical absorption for carbon acceptors in GaAsSARGENT, L ; BLAKEMORE, J. SApplied physics letters, 1989-03, Vol.54 (11), p.1013-1015 [Periódico revisado por pares]Melville, NY: American Institute of PhysicsTexto completo disponível |
| 6 |
Material Type: Artigo
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Transient photoconductivity measurements in semi-insulating GaAs. I: An analog approachKREMER, R. E ; ARIKAN, M. C ; ABELE, J. C ; BLAKEMORE, J. SJournal of applied physics, 1987-09, Vol.62 (6), p.2424-2431 [Periódico revisado por pares]Woodbury, NY: American Institute of PhysicsTexto completo disponível |
| 7 |
Material Type: Artigo
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Transient photoconductivity measurements in semi-insulating GaAs II: A digital approachABELE, J. C ; KREMER, R. E ; BLAKEMORE, J. SJournal of applied physics, 1987-09, Vol.62 (6), p.2432-2438 [Periódico revisado por pares]Woodbury, NY: American Institute of PhysicsTexto completo disponível |
| 8 |
Material Type: Artigo
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Annealing of GaAs grown by vertical zone meltingNordquist, P.E.R. ; Henry, R.L. ; Blakemore, J.S. ; Saban, S.B. ; Gorman, R.J.Journal of crystal growth, 1994-08, Vol.141 (3), p.343-346 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
| 9 |
Material Type: Artigo
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Assessment of the ionized EL2 fraction in semi-insulating GaAsBLAKEMORE, J. S ; SARGENT, L ; TANG, R.-S ; SWIGGARD, E. MApplied physics letters, 1989-05, Vol.54 (21), p.2106-2108 [Periódico revisado por pares]Melville, NY: American Institute of PhysicsTexto completo disponível |
| 10 |
Material Type: Artigo
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Mapping of GaAs wafers by quantitative infrared microscopyDOBRILLA, P ; BLAKEMORE, J. SJournal of applied physics, 1987-02, Vol.61 (4), p.1442-1448 [Periódico revisado por pares]Woodbury, NY: American Institute of PhysicsTexto completo disponível |
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