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Refinado por: Nome da Publicação: Applied Physics Letters remover
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1
Structural and electronic properties of Ga2O3-Al2O3 alloys
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Structural and electronic properties of Ga2O3-Al2O3 alloys

Peelaers, Hartwin ; Varley, Joel B. ; Speck, James S. ; Van de Walle, Chris G.

Applied physics letters, 2018-06, Vol.112 (24) [Periódico revisado por pares]

Melville: American Institute of Physics

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2
Donors and deep acceptors in β-Ga2O3
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Donors and deep acceptors in β-Ga2O3

Neal, Adam T. ; Mou, Shin ; Rafique, Subrina ; Zhao, Hongping ; Ahmadi, Elaheh ; Speck, James S. ; Stevens, Kevin T. ; Blevins, John D. ; Thomson, Darren B. ; Moser, Neil ; Chabak, Kelson D. ; Jessen, Gregg H.

Applied physics letters, 2018-08, Vol.113 (6) [Periódico revisado por pares]

Melville: American Institute of Physics

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3
Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture
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Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture

Leonard, J. T. ; Cohen, D. A. ; Yonkee, B. P. ; Farrell, R. M. ; Margalith, T. ; Lee, S. ; DenBaars, S. P. ; Speck, J. S. ; Nakamura, S.

Applied physics letters, 2015-07, Vol.107 (1) [Periódico revisado por pares]

Melville: American Institute of Physics

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4
Silver free III-nitride flip chip light-emitting-diode with wall plug efficiency over 70% utilizing a GaN tunnel junction
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Silver free III-nitride flip chip light-emitting-diode with wall plug efficiency over 70% utilizing a GaN tunnel junction

Yonkee, B. P. ; Young, E. C. ; DenBaars, S. P. ; Nakamura, S. ; Speck, J. S.

Applied physics letters, 2016-11, Vol.109 (19) [Periódico revisado por pares]

Melville: American Institute of Physics

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5
The quasi-free-standing nature of graphene on H-saturated SiC(0001)
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The quasi-free-standing nature of graphene on H-saturated SiC(0001)

Speck, F. ; Jobst, J. ; Fromm, F. ; Ostler, M. ; Waldmann, D. ; Hundhausen, M. ; Weber, H. B. ; Seyller, Th

Applied physics letters, 2011-09, Vol.99 (12), p.122106-122106-3 [Periódico revisado por pares]

American Institute of Physics

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6
Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact
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Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact

Leonard, J. T. ; Young, E. C. ; Yonkee, B. P. ; Cohen, D. A. ; Margalith, T. ; DenBaars, S. P. ; Speck, J. S. ; Nakamura, S.

Applied physics letters, 2015-08, Vol.107 (9) [Periódico revisado por pares]

Melville: American Institute of Physics

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7
Erratum: “Structural and electronic properties of Ga2O3-Al2O3 alloys” [Appl. Phys. Lett. 112, 242101 (2018)]
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Erratum: “Structural and electronic properties of Ga2O3-Al2O3 alloys” [Appl. Phys. Lett. 112, 242101 (2018)]

Peelaers, Hartwin ; Varley, Joel B. ; Speck, James S. ; Van de Walle, Chris G.

Applied physics letters, 2021-06, Vol.118 (25) [Periódico revisado por pares]

Melville: American Institute of Physics

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8
Role of defects in ultra-high gain in fast planar tin gallium oxide UV-C photodetector by MBE
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Role of defects in ultra-high gain in fast planar tin gallium oxide UV-C photodetector by MBE

Mukhopadhyay, Partha ; Hatipoglu, Isa ; Frodason, Ymir K. ; Varley, Joel B. ; Williams, Martin S. ; Hunter, Daniel A. ; Gunasekar, Naresh K. ; Edwards, Paul R. ; Martin, Robert W. ; Wu, Feng ; Mauze, Akhil ; Speck, James S. ; Schoenfeld, Winston V.

Applied physics letters, 2022-09, Vol.121 (11) [Periódico revisado por pares]

Melville: American Institute of Physics

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9
Erratum: “Structural and electronic properties of Ga2O3-Al2O3 alloys” [Appl. Phys. Lett. 112, 242101 (2018)]
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Erratum: “Structural and electronic properties of Ga2O3-Al2O3 alloys” [Appl. Phys. Lett. 112, 242101 (2018)]

Peelaers, Hartwin ; Varley, Joel B. ; Speck, James S. ; Van de Walle, Chris G.

Applied physics letters, 2019-10, Vol.115 (15) [Periódico revisado por pares]

Melville: American Institute of Physics

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10
Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching
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Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching

Holder, C. O. ; Leonard, J. T. ; Farrell, R. M. ; Cohen, D. A. ; Yonkee, B. ; Speck, J. S. ; DenBaars, S. P. ; Nakamura, S. ; Feezell, D. F.

Applied physics letters, 2014-07, Vol.105 (3) [Periódico revisado por pares]

Melville: American Institute of Physics

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