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1 |
Material Type: Artigo
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Degenerate doping in β-Ga2O3 single crystals through Hf-dopingSaleh, Muad ; Varley, Joel B ; Jesenovec, Jani ; Bhattacharyya, Arkka ; Krishnamoorthy, Sriram ; Swain, Santosh ; Lynn, KelvinSemiconductor science and technology, 2020-04, Vol.35 (4) [Periódico revisado por pares]IOP PublishingTexto completo disponível |
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Material Type: Artigo
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Doping assessment in GaAs nanowiresGoktas, N Isik ; Fiordaliso, E M ; LaPierre, R RNanotechnology, 2018-06, Vol.29 (23), p.234001-234001 [Periódico revisado por pares]England: IOP PublishingTexto completo disponível |
3 |
Material Type: Artigo
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Structural and electronic properties of epitaxial graphene on SiC(0 0 0 1): a review of growth, characterization, transfer doping and hydrogen intercalationRiedl, C ; Coletti, C ; Starke, UJournal of physics. D, Applied physics, 2010-09, Vol.43 (37), p.374009-374009 [Periódico revisado por pares]IOP PublishingTexto completo disponível |
4 |
Material Type: Artigo
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Thorium-doping–induced superconductivity up to 56 K in Gd1−xThxFeAsOWang, Cao ; Li, Linjun ; Chi, Shun ; Zhu, Zengwei ; Ren, Zhi ; Li, Yuke ; Wang, Yuetao ; Lin, Xiao ; Luo, Yongkang ; Jiang, Shuai ; Xu, Xiangfan ; Cao, Guanghan ; Xu, Zhu'anEurophysics letters, 2008-09, Vol.83 (6), p.67006-67006(4) [Periódico revisado por pares]IOP PublishingTexto completo disponível |
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Material Type: Artigo
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Theoretical study on the improvement of the doping efficiency of Al in 4H-SiC by co-doping group-IVB elementsHuang, Yuanchao ; Wang, Rong ; Qian, Yixiao ; Zhang, Yiqiang ; Yang, Deren ; Pi, XiaodongChinese physics B, 2022-03, Vol.31 (4), p.46104-582 [Periódico revisado por pares]Chinese Physical Society and IOP Publishing LtdTexto completo disponível |
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Material Type: Artigo
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Electron-doping Ruddlesden-Popper nickelateChen, X. ; Jiang, P. ; Zhong, Z.Europhysics letters, 2023-04, Vol.142 (2), p.26005 [Periódico revisado por pares]EDP Sciences, IOP Publishing and Società Italiana di FisicaTexto completo disponível |
7 |
Material Type: Artigo
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All-inorganic colloidal silicon nanocrystals-surface modification by boron and phosphorus co-dopingFujii, Minoru ; Sugimoto, Hiroshi ; Imakita, KenjiNanotechnology, 2016-07, Vol.27 (26), p.262001-262001 [Periódico revisado por pares]England: IOP PublishingTexto completo disponível |
8 |
Material Type: Artigo
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Ge doping of β-Ga2O3 films grown by plasma-assisted molecular beam epitaxyAhmadi, Elaheh ; Koksaldi, Onur S. ; Kaun, Stephen W. ; Oshima, Yuichi ; Short, Dane B. ; Mishra, Umesh K. ; Speck, James S.Applied physics express, 2017-04, Vol.10 (4) [Periódico revisado por pares]The Japan Society of Applied PhysicsTexto completo disponível |
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Material Type: Artigo
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Doping effect in Si nanocrystalsLi, Dongke ; Xu, Jun ; Zhang, Pei ; Jiang, Yicheng ; Chen, KunjiJournal of physics. D, Applied physics, 2018-06, Vol.51 (23), p.233002 [Periódico revisado por pares]IOP PublishingTexto completo disponível |
10 |
Material Type: Artigo
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Intrinsic and extrinsic doping of ZnO and ZnO alloysEllmer, Klaus ; Bikowski, AndréJournal of physics. D, Applied physics, 2016-10, Vol.49 (41), p.413002 [Periódico revisado por pares]IOP PublishingTexto completo disponível |