Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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Material Type: Standard
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Study on the Quantum Confinement of Photo-Generated Carriers in Quantum WellsDing, Ding ; Liu, Weiye ; Guo, Jiaping ; Tan, Xinhui ; Zhang, Wei ; Han, Lili ; Wang, Zhaowei ; Gong, Weihua ; Tang, XianshengPhotonics Journal, IEEE, 2023, Vol.15, p.1-4IEEESem texto completo |
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Material Type: Standard
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Design of 7T SRAM Using InGaAs-Dual Pocket-Dual Gate-Tunnel FET for IoT ApplicationsRasheed, Gadarapulla ; Sridevi, SriadibhatlaAccess, IEEE, 2023, Vol.11, p.76034-76045IEEESem texto completo |
3 |
Material Type: Standard
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Co-Diffused Back-Contact Back-Junction Silicon Solar Cells without Gap RegionsKeding, Roman ; Stuwe, David ; Kamp, Mathias ; Reichel, Christian ; Wolf, Andreas ; Woehl, Robert ; Borchert, Dietmar ; Reinecke, Holger ; Biro, DanielPhotovoltaics, IEEE Journal of, 2013, Vol.3, p.1236-1242IEEESem texto completo |
4 |
Material Type: Standard
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A Near-Infrared Enhanced Field-Line Crowding Based CMOS-Integrated Avalanche PhotodiodeKohneh Poushi, Seyed Saman ; Gasser, Christoph ; Goll, Bernhard ; Hofbauer, Michael ; Schneider-Hornstein, Kerstin ; Zimmermann, HorstPhotonics Journal, IEEE, 2023, Vol.15, p.1-9IEEESem texto completo |
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Material Type: Standard
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Analyses and Experiments of Ultralow Specific On-Resistance LDMOS With Integrated DiodesWei, Jie ; Dai, Kaiwei ; Luo, Xiaorong ; Ma, Zhen ; Li, Jie ; Li, Congcong ; Zhang, BoElectron Devices Society, IEEE Journal of the, 2021, Vol.9, p.1161-1165IEEESem texto completo |
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Material Type: Standard
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InAs Diodes Fabricated Using Be Ion ImplantationWhite, Benjamin S ; Sandall, Ian C ; David, John P. R ; Tan, Chee HingElectron Devices, IEEE Transactions on, 2015, Vol.62, p.2928-2932IEEESem texto completo |
7 |
Material Type: Standard
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F1153 Standard Test Method for Characterization of Metal-Oxide-Silicon (MOS) Structures by Capacitance-Voltage Measurements1992Texto completo disponível |
8 |
Material Type: Standard
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F978 Standard Test Method for Characterizing Semiconductor Deep Levels by Transient Capacitance Techniques2001Texto completo disponível |
9 |
Material Type: Standard
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F72 Standard Specification for Gold Wire for Semiconductor Lead Bonding2001Texto completo disponível |
10 |
Material Type: Standard
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F72 Standard Specification for Gold Wire for Semiconductor Lead Bonding2001Texto completo disponível |