skip to main content
Idioma:
Primo Advanced Search
Primo Advanced Search Query Term
Primo Advanced Search Query Term
Primo Advanced Search Query Term
Primo Advanced Search prefilters
Busca Simples
Resultados 1 2 3 4 5 next page
Mostrar Somente
Refinado por: tipo de recurso: Standards remover
Result Number Material Type Add to My Shelf Action Record Details and Options
1
Study on the Quantum Confinement of Photo-Generated Carriers in Quantum Wells
Study on the Quantum Confinement of Photo-Generated Carriers in Quantum Wells
Material Type:
Standard 		Adicionar ao Meu Espaço

Study on the Quantum Confinement of Photo-Generated Carriers in Quantum Wells

Ding, Ding ; Liu, Weiye ; Guo, Jiaping ; Tan, Xinhui ; Zhang, Wei ; Han, Lili ; Wang, Zhaowei ; Gong, Weihua ; Tang, Xiansheng

Photonics Journal, IEEE, 2023, Vol.15, p.1-4

IEEE

Sem texto completo

Citações Citado por
2
Design of 7T SRAM Using InGaAs-Dual Pocket-Dual Gate-Tunnel FET for IoT Applications
Design of 7T SRAM Using InGaAs-Dual Pocket-Dual Gate-Tunnel FET for IoT Applications
Material Type:
Standard 		Adicionar ao Meu Espaço

Design of 7T SRAM Using InGaAs-Dual Pocket-Dual Gate-Tunnel FET for IoT Applications

Rasheed, Gadarapulla ; Sridevi, Sriadibhatla

Access, IEEE, 2023, Vol.11, p.76034-76045

IEEE

Sem texto completo

Citações Citado por
3
Co-Diffused Back-Contact Back-Junction Silicon Solar Cells without Gap Regions
Co-Diffused Back-Contact Back-Junction Silicon Solar Cells without Gap Regions
Material Type:
Standard 		Adicionar ao Meu Espaço

Co-Diffused Back-Contact Back-Junction Silicon Solar Cells without Gap Regions

Keding, Roman ; Stuwe, David ; Kamp, Mathias ; Reichel, Christian ; Wolf, Andreas ; Woehl, Robert ; Borchert, Dietmar ; Reinecke, Holger ; Biro, Daniel

Photovoltaics, IEEE Journal of, 2013, Vol.3, p.1236-1242

IEEE

Sem texto completo

Citações Citado por
4
A Near-Infrared Enhanced Field-Line Crowding Based CMOS-Integrated Avalanche Photodiode
A Near-Infrared Enhanced Field-Line Crowding Based CMOS-Integrated Avalanche Photodiode
Material Type:
Standard 		Adicionar ao Meu Espaço

A Near-Infrared Enhanced Field-Line Crowding Based CMOS-Integrated Avalanche Photodiode

Kohneh Poushi, Seyed Saman ; Gasser, Christoph ; Goll, Bernhard ; Hofbauer, Michael ; Schneider-Hornstein, Kerstin ; Zimmermann, Horst

Photonics Journal, IEEE, 2023, Vol.15, p.1-9

IEEE

Sem texto completo

Citações Citado por
5
Analyses and Experiments of Ultralow Specific On-Resistance LDMOS With Integrated Diodes
Analyses and Experiments of Ultralow Specific On-Resistance LDMOS With Integrated Diodes
Material Type:
Standard 		Adicionar ao Meu Espaço

Analyses and Experiments of Ultralow Specific On-Resistance LDMOS With Integrated Diodes

Wei, Jie ; Dai, Kaiwei ; Luo, Xiaorong ; Ma, Zhen ; Li, Jie ; Li, Congcong ; Zhang, Bo

Electron Devices Society, IEEE Journal of the, 2021, Vol.9, p.1161-1165

IEEE

Sem texto completo

Citações Citado por
6
InAs Diodes Fabricated Using Be Ion Implantation
InAs Diodes Fabricated Using Be Ion Implantation
Material Type:
Standard 		Adicionar ao Meu Espaço

InAs Diodes Fabricated Using Be Ion Implantation

White, Benjamin S ; Sandall, Ian C ; David, John P. R ; Tan, Chee Hing

Electron Devices, IEEE Transactions on, 2015, Vol.62, p.2928-2932

IEEE

Sem texto completo

Citações Citado por
7
F1153 Standard Test Method for Characterization of Metal-Oxide-Silicon (MOS) Structures by Capacitance-Voltage Measurements
F1153 Standard Test Method for Characterization of Metal-Oxide-Silicon (MOS) Structures by Capacitance-Voltage Measurements
Material Type:
Standard 		Adicionar ao Meu Espaço

F1153 Standard Test Method for Characterization of Metal-Oxide-Silicon (MOS) Structures by Capacitance-Voltage Measurements

1992

Texto completo disponível

Citações Citado por
8
F978 Standard Test Method for Characterizing Semiconductor Deep Levels by Transient Capacitance Techniques
F978 Standard Test Method for Characterizing Semiconductor Deep Levels by Transient Capacitance Techniques
Material Type:
Standard 		Adicionar ao Meu Espaço

F978 Standard Test Method for Characterizing Semiconductor Deep Levels by Transient Capacitance Techniques

2001

Texto completo disponível

Citações Citado por
9
F72 Standard Specification for Gold Wire for Semiconductor Lead Bonding
F72 Standard Specification for Gold Wire for Semiconductor Lead Bonding
Material Type:
Standard 		Adicionar ao Meu Espaço

F72 Standard Specification for Gold Wire for Semiconductor Lead Bonding

2001

Texto completo disponível

Citações Citado por
10
F72 Standard Specification for Gold Wire for Semiconductor Lead Bonding
F72 Standard Specification for Gold Wire for Semiconductor Lead Bonding
Material Type:
Standard 		Adicionar ao Meu Espaço

F72 Standard Specification for Gold Wire for Semiconductor Lead Bonding

2001

Texto completo disponível

Citações Citado por
Resultados 1 2 3 4 5 next page

Personalize Seus Resultados

  1. Editar

Refine Search Results

Expandir Meus Resultados

  1.   

Mostrar Somente

  1. Recursos Online (84)

Data de Publicação 

De até
Refinar
  1. Antes de1996  (7)
  2. 1996Até2001  (17)
  3. 2002Até2007  (11)
  4. 2008Até2015  (19)
  5. Após 2015  (35)
  6. Mais opções open sub menu

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

Buscando em bases de dados remotas. Favor aguardar.