Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Reliability prediction of FinFET FPGAs by MTOLBender, E. ; Bernstein, J.B. ; Bensoussan, A.Microelectronics and reliability, 2020-11, Vol.114, p.113809, Article 113809 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
2 |
Material Type: Artigo
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Analysis of radiation-induced transient errors on 7 nm FinFET technologyAzimi, S. ; De Sio, C. ; Sterpone, L.Microelectronics and reliability, 2021-11, Vol.126, p.114319, Article 114319 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
3 |
Material Type: Artigo
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Characterization of single-event transients induced by high LET heavy ions in 16 nm bulk FinFET inverter chainsChi, Yaqing ; Wu, Zhenyu ; Huang, Pengcheng ; Sun, Qian ; Liang, Bin ; Zhao, ZhenyuMicroelectronics and reliability, 2022-03, Vol.130, p.114490, Article 114490 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
4 |
Material Type: Artigo
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A breakthrough for temperature and linearity stability from device to circuit-level with 14 nm junctionless SOI FinFET: Advancing K-band LNA performanceKhodabakhsh, Amir ; Fallahnejad, Mohammad ; Vadizadeh, MahdiMicroelectronics and reliability, 2024-01, Vol.152, p.115278, Article 115278 [Periódico revisado por pares]Texto completo disponível |
5 |
Material Type: Artigo
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Analysis of total ionizing dose response of optimized fin geometry workfunction modulated SOI-FinFETRay, Abhishek ; Naugarhiya, Alok ; Mishra, Guru PrasadMicroelectronics and reliability, 2022-07, Vol.134, p.114549, Article 114549 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
6 |
Material Type: Artigo
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Analysis of 6 T SRAM cell in sub-45 nm CMOS and FinFET technologiesAlmeida, R.B. ; Marques, C.M. ; Butzen, P.F. ; Silva, F.R.G. ; Reis, R.A.L. ; Meinhardt, C.Microelectronics and reliability, 2018-09, Vol.88-90, p.196-202 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
7 |
Material Type: Artigo
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A comparative radiation analysis of reconfigurable memory technologies: FinFET versus bulk CMOSAzimi, S. ; De Sio, C. ; Portaluri, A. ; Rizzieri, D. ; Sterpone, L.Microelectronics and reliability, 2022-11, Vol.138, p.114733, Article 114733 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
8 |
Material Type: Artigo
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Failure analysis on 14 nm FinFET devices with ESD CDM failureShaalini, C. ; Tan, P.K. ; Zhao, Y.Z. ; Liu, B.H. ; Ma, Y.Z. ; Quah, A. ; Pan, Y.L. ; Tan, H. ; Mai, Z.H.Microelectronics and reliability, 2018-09, Vol.88-90, p.321-333 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
9 |
Material Type: Artigo
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Optimal sampling for accelerated testing in 14 nm FinFET ring oscillatorsHsu, Shu-Han ; Huang, Ying-Yuan ; Wu, Yi-Da ; Yang, Kexin ; Lin, Li-Hsiang ; Milor, LindaMicroelectronics and reliability, 2020-11, Vol.114, p.113753, Article 113753 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
10 |
Material Type: Artigo
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FinFET-based product performance: Modeling and evaluation of standard cells in FinFET technologiesKarapetyan, Shushanik ; Kleeberger, Veit ; Schlichtmann, UlfMicroelectronics and reliability, 2016-06, Vol.61, p.30-34 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |