Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Bulk FinFET With Low- \kappa Spacers for Continued ScalingSachid, Angada B. ; Min-Cheng Chen ; Chenming HuIEEE transactions on electron devices, 2017-04, Vol.64 (4), p.1861-1864 [Periódico revisado por pares]IEEETexto completo disponível |
2 |
Material Type: Artigo
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Fin Shape Impact on FinFET Leakage With Application to Multithreshold and Ultralow-Leakage FinFET DesignGaynor, Brad D. ; Hassoun, SohaIEEE transactions on electron devices, 2014-08, Vol.61 (8), p.2738-2744 [Periódico revisado por pares]New York: IEEETexto completo disponível |
3 |
Material Type: Artigo
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(Ultra)Wide-Bandgap Vertical Power FinFETsZhang, Yuhao ; Palacios, TomasIEEE transactions on electron devices, 2020-10, Vol.67 (10), p.3960-3971 [Periódico revisado por pares]New York: IEEETexto completo disponível |
4 |
Material Type: Artigo
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A new characterization model of FinFET self-heating effect based on FinFET characteristic parameterWang, Yue ; Liang, Huaguo ; Zhang, Hong ; Li, Danqing ; Lu, Yingchun ; Yi, Maoxiang ; Huang, ZhengfengMicroelectronic engineering, 2024-04, Vol.287, p.112155, Article 112155 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
5 |
Material Type: Artigo
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Ground plane fin-shaped field effect transistor (GP-FinFET): A FinFET for low leakage power circuitsSaremi, Mehdi ; Afzali-Kusha, Ali ; Mohammadi, SaeedMicroelectronic engineering, 2012-07, Vol.95, p.74-82 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
6 |
Material Type: Artigo
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14-nm FinFET Technology for Analog and RF ApplicationsSingh, Jagar ; Ciavatti, J. ; Sundaram, K. ; Wong, J. S. ; Bandyopadhyay, A. ; Zhang, X. ; Li, S. ; Bellaouar, A. ; Watts, J. ; Lee, J. G. ; Samavedam, S. B.IEEE transactions on electron devices, 2018-01, Vol.65 (1), p.31-37 [Periódico revisado por pares]IEEETexto completo disponível |
7 |
Material Type: Artigo
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A 3-D TCAD Framework for NBTI-Part I: Implementation Details and FinFET Channel Material ImpactTiwari, Ravi ; Parihar, Narendra ; Thakor, Karansingh ; Wong, Hiu Yung ; Motzny, Steve ; Choi, Munkang ; Moroz, Victor ; Mahapatra, SouvikIEEE transactions on electron devices, 2019-05, Vol.66 (5), p.2086-2092 [Periódico revisado por pares]New York: IEEETexto completo disponível |
8 |
Material Type: Ata de Congresso
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Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFETLoubet, N. ; Hook, T. ; Montanini, P. ; Yeung, C-W ; Kanakasabapathy, S. ; Guillom, M. ; Yamashita, T. ; Zhang, J. ; Miao, X. ; Wang, J. ; Young, A. ; Chao, R. ; Kang, M. ; Liu, Z. ; Fan, S. ; Hamieh, B. ; Sieg, S. ; Mignot, Y. ; Xu, W. ; Seo, S-C ; Yoo, J. ; Mochizuki, S. ; Sankarapandian, M. ; Kwon, O. ; Carr, A. ; Greene, A. ; Park, Y. ; Frougier, J. ; Galatage, R. ; Bao, R. ; Shearer, J. ; Conti, R. ; Song, H. ; Lee, D. ; Kong, D. ; Xu, Y. ; Arceo, A. ; Bi, Z. ; Xu, P. ; Muthinti, R. ; Li, J. ; Wong, R. ; Brown, D. ; Oldiges, P. ; Robison, R. ; Arnold, J. ; Felix, N. ; Skordas, S. ; Gaudiello, J. ; Standaert, T. ; Jagannathan, H. ; Corliss, D. ; Na, M-H ; Knorr, A. ; Wu, T. ; Gupta, D. ; Lian, S. ; Divakaruni, R. ; Gow, T. ; Labelle, C. ; Lee, S. ; Paruchuri, V. ; Bu, H. ; Khare, M.2017 Symposium on VLSI Technology, 2017, p.T230-T231JSAPSem texto completo |
9 |
Material Type: Artigo
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Challenges and Limitations of CMOS Scaling for FinFET and Beyond ArchitecturesRazavieh, Ali ; Zeitzoff, Peter ; Nowak, Edward J.IEEE transactions on nanotechnology, 2019, Vol.18, p.999-1004 [Periódico revisado por pares]New York: IEEETexto completo disponível |
10 |
Material Type: Artigo
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Ga₂O₃ Vertical FinFET With Integrated Schottky Barrier Diode for Low-Loss ConductionXu, Xiaorui ; Deng, Yicong ; Li, Titao ; Xu, Xiaohui ; Yang, Dan ; Zhu, Minmin ; Zhang, Haizhong ; Lu, XiaoqiangIEEE transactions on electron devices, 2024-04, Vol.71 (4), p.2530-2535 [Periódico revisado por pares]IEEETexto completo disponível |