Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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11 |
Material Type: Artigo
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0.10 μm graded InGaAs channel InP HEMT with 305 GHz fT and 340 GHz fmaxWojtowicz, M. ; Lai, R. ; Streit, D.C. ; Ng, G.I. ; Block, T.R. ; Tan, K.L. ; Liu, P.H. ; Freudenthal, A.K. ; Dia, R.M.IEEE electron device letters, 1994-11, Vol.15 (11), p.477-479 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
12 |
Material Type: Artigo
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< 012 > -oriented growth of the films LaNiO sub(3)/SiO sub(2)/Si(111) by pulsed laser depositionYin, J ; Chen, X Y ; Li, Q C ; Liu, X Y ; Liu, Z GJournal of materials science, 1998-12, Vol.33 (23), p.5631-5635 [Periódico revisado por pares]Texto completo disponível |
13 |
Material Type: Artigo
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(012) Textured LiNbO3 Waveguiding Films Grown on SiO2 by Pulsed Laser Deposition TechniqueQuo, X. L. ; Liu, Z. G. ; Liu, J. M. ; Zhu, S. N. ; Zhu, Y. Y.Physica status solidi. A, Applied research, 1996-04, Vol.154 (2), p.615-622Berlin: WILEY-VCH VerlagTexto completo disponível |
14 |
Material Type: Artigo
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012〉-oriented growth of the films LaNiO3/SiO2/Si(111) by pulsed laser depositionYin, J ; Chen, X Y ; Li, Q C ; Liu, X Y ; Liu, Z GJournal of materials science, 1998-12, Vol.33 (23), p.5631-5635 [Periódico revisado por pares]New York: Springer Nature B.VTexto completo disponível |
15 |
Material Type: Artigo
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0.15-μm n-n gate CMOS technology with channel selective epitaxy and transient enhanced diffusion suppressionAbiko, Hitoshi ; Ono, Atsuki ; Ueno, Ryuuichi ; Masuoka, Sadaaki ; Shishiguchi, Seiichi ; Nakajima, Ken ; Sakai, IsamiElectronics & communications in Japan. Part 2, Electronics, 1996, Vol.79 (11), p.28-35 [Periódico revisado por pares]New York: Wiley Subscription Services, Inc., A Wiley CompanyTexto completo disponível |
16 |
Material Type: Artigo
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0.24-(mu)m CMOS technology and BSIM RF modeling for Bluetooth power applicationsChen, E ; Heo, D ; Laskar, J ; Bien, DMicrowave Journal, 2001-02, Vol.44 (2), p.142-152Dedham: Horizon House Publications, IncTexto completo disponível |
17 |
Material Type: Artigo
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02.4.1. On Hadamard Product of Square Roots of Correlation Matrices—SolutionLiu, ShuangzheEconometric theory, 2003-08, Vol.19 (4), p.703-704 [Periódico revisado por pares]New York, USA: Cambridge University PressTexto completo disponível |
18 |
Material Type: Ata de Congresso
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0.25/spl mu/m In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As/InAs/sub 0.3/P/sub 0.7/ composite channel HEMTs with an f/sub T/ of 115GHzLiu, D. ; Hudait, M. ; Lin, Y. ; Kim, H. ; Ringel, S.A. ; Lu, W.2005 Asia-Pacific Microwave Conference Proceedings, 2005, Vol.2, p.3 pp.IEEETexto completo disponível |
19 |
Material Type: Artigo
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03/02587 Fission product release and its environment impact for normal reactor operations and for relevant accidents: Liu, Y. and Cao, J. Nuclear Engineering and Design, 2002, 218, (1–3), 81–90Fuel and energy abstracts, 2003, Vol.44 (6), p.413-413 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
20 |
Material Type: Ata de Congresso
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0.32-μm pitch random line pattern formation by dense dummy pattern and double exposure in KrF wavelengthNakao, Shuji ; Tsujita, Kouichirou ; Arimoto, Ichiriou ; Wakamiya, WataruSPIE 2000Texto completo disponível |