Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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11 |
Material Type: Report
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Studies of Silicon Refractory Metal Interfaces: Photoemission Study of Interface Formation and Compound NucleationWeaver,J H1983Texto completo disponível |
12 |
Material Type: Report
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Calculating the Probability of Radiation from the Dissociated States of Diatomic MoleculesKochelap,V A1983Texto completo disponível |
13 |
Material Type: Report
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Study of the interaction of light with sub-micron metallic surfaces. Progress reportReifenberger, R.United States 1985Sem texto completo |
14 |
Material Type: Report
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JPRS report, science technology, Japan, mechanism of superconductivityJoint Publications Research Service, Arlington, VA (United States)United States 1990Sem texto completo |
15 |
Material Type: Report
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Photoemission, Vibrational and Stimulated Desorption Studies of Metal-Semiconductor Interfaces and of Chemisorbed Atoms and MoleculesMargaritondo,G1984Texto completo disponível |
16 |
Material Type: Report
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Effects of Temperature on Excited-State Descriptions of Luminescent Photoelectrochemical Cells Employing Tellrium-Doped Cadmium Sulfide ElectrodesEllis,Arthur B ; Karas,Bradley R1981Texto completo disponível |
17 |
Material Type: Report
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Luminescent Photoelectrochemical Cells. 5. Multiple Emission from Tellurium-Doped Cadmium Sulfide Photoelectrodes and Implications Regarding Excited-State CommunicationKaras,Bradley R ; Streckert,Holger H ; Schreiner,Rodney ; Ellis,Arthur B1980Texto completo disponível |
18 |
Material Type: Report
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Study of electrons photoemitted from field-emission tips. Progress report, July 1-December 21, 1981Reifenberger, R.United States 1981Sem texto completo |
19 |
Material Type: Report
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Tin Oxide and Related Oxides with Regard to Cold CathodesPowell,R A ; Spicer,W E1976Texto completo disponível |
20 |
Material Type: Report
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Photoelectric Spectroscopy of Indium in SiliconChandler,Thomas C ; Spry,Robert J ; Brown,Gail J ; Rome,John J ; Harris,Richard J1982Texto completo disponível |