Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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21 |
Material Type: Artigo
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0.18 [mu]m CMOS dual-band low-noise amplifier for ZigBee developmentXuan, K ; Tsang, K F ; Lee, W C ; Lee, S CElectronics letters, 2010-01, Vol.46 (1), p.1 [Periódico revisado por pares]Stevenage: John Wiley & Sons, IncSem texto completo |
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22 |
Material Type: Ata de Congresso
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0.18 /spl mu/m SiGe BiCMOS technology for wireless and 40 Gb/s communication productsSchuegraf, K. ; Racanelli, M. ; Kalburge, A. ; Shen, B. ; Chun Hu ; Chapek, D. ; Howard, D. ; Quon, D. ; Feiler, D. ; Dornisch, D. ; U'Ren, G. ; Abdul-Ridha, H. ; Jie Zheng ; Jinshu Zhang ; Bell, K. ; Ring, K. ; Yin, K. ; Joshi, P. ; Akhtar, S. ; Lee, T. ; Kempf, P.Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.01CH37212), 2001, p.147-150IEEETexto completo disponível |
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23 |
Material Type: Ata de Congresso
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0.18 um modular triple self-aligned embedded split-gate flash memoryMih, R. ; Harrington, J. ; Houlihan, K. ; Hyun Koo Lee ; Chan, K. ; Johnson, J. ; Bomy Chen ; Jiang Yan ; Schmidt, A. ; Gruensfelder, C. ; Kisang Kim ; Shum, D. ; Lo, C. ; Lee, D. ; Levi, A. ; Chung Lam2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104), 2000, p.120-121IEEETexto completo disponível |
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24 |
Material Type: Artigo
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0.18 μm CMOS dual-band low-noise amplifier for ZigBee developmentXUAN, K ; TSANG, K. F ; LEE, W. C ; LEE, S. CElectronics letters, 2010-01, Vol.46 (1), p.85-86 [Periódico revisado por pares]Stevenage: Institution of Engineering and TechnologySem texto completo |
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25 |
Material Type: Artigo
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0.18 [micro sign]m CMOS dual-band low-noise amplifier for ZigBee developmentXuan, K. ; Tsang, K.F. ; Lee, W.C. ; Lee, S.C.Electronics letters, 2010, Vol.46 (1), p.85 [Periódico revisado por pares]Sem texto completo |
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26 |
Material Type: Artigo
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0.2-mu m n-channel and p-channel MOSFETs integrated onoxidation-planarized twin-tubsLiu, C T ; Lin, W ; Lee, K H ; Liu, RIEEE electron device letters, 1996-11, Vol.17 (11), p.500-502 [Periódico revisado por pares]Texto completo disponível |
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27 |
Material Type: Artigo
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0.2-μm n-channel and p-channel MOSFETs integrated on oxidation-planarized twin-tubsLiu, C.T. ; Lin, W. ; Lee, K.H. ; Liu, R.IEEE electron device letters, 1996-11, Vol.17 (11), p.500-502 [Periódico revisado por pares]IEEETexto completo disponível |
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28 |
Material Type: Artigo
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0.3- mu m CMOS 8-Gb/s 4-PAM serial link transceiverFarjad-Rad, Ramin ; Yang, Chih-Kong Ken ; Horowitz, Mark A ; Lee, Thomas HIEEE journal of solid-state circuits, 2000, Vol.35 (5), p.757-764 [Periódico revisado por pares]Texto completo disponível |
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29 |
Material Type: Ata de Congresso
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0.31k1 ArF lithography for 70nm DRAMBOK, Cheolkyu ; LEE, Ki-Lyoung ; KIM, Jin-Woong ; PARK, Jun-Taek ; HWANG, Young-Sun ; EOM, Tae-Seung ; KIM, Seo-Min ; LEE, Geunsu ; JUNG, Jae-Chang ; LIM, Chang-Moon ; MOON, Seung-ChanSPIE proceedings series, 2005Bellingham WA: SPIETexto completo disponível |
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30 |
Material Type: Ata de Congresso
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0.37 mS/μm In0.53Ga0.47As MOSFET with 5 nm channel and self-aligned epitaxial raised source/drainSingisetti, Uttam ; Wistey, Mark A. ; Burek, Greg J. ; Baraskar, Ashish K. ; Cagnon, Joel ; Thibeault, Brian J. ; Stemmer, Susanne ; Gossard, Arthur C. ; Rodwell, Mark J.W. ; Kim, Eunji ; Shin, Byungha ; McIntyre, Paul C. ; Lee, Yong-Ju2009 Device Research Conference, 2009, p.253-254IEEETexto completo disponível |