Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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21 |
Material Type: Ata de Congresso
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A 0.084% Nonlinearity Open-Loop Capacitive Micro-Accelerometer with On-Chip Digital Nonlinearity Calibration and Embedded EEPROMZhao, Meng ; Zhao, Qiancheng ; Chen, Zhongjian ; Lu, Wengao ; Zhang, Yacong ; Yan, Guizhen2021 IEEE International Symposium on Circuits and Systems (ISCAS), 2021, p.1-5IEEETexto completo disponível |
22 |
Material Type: Ata de Congresso
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A 0.1-0.6 V input range voltage boost converter with low-leakage driver for low-voltage energy harvestingTsuji, Yuto ; Hirose, Tetsuya ; Ozaki, Toshihiro ; Asano, Hiroki ; Kuroki, Nobutaka ; Numa, Masahiro2017 24th IEEE International Conference on Electronics, Circuits and Systems (ICECS), 2017, p.502-505IEEETexto completo disponível |
23 |
Material Type: Ata de Congresso
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A 0.1-12 GHz fully differential CMOS distributed amplifier employing a feedforward distortion cancellation techniqueEL-KHATIB, Ziad ; MACEACHERN, Leonard ; MAHMOUD, Samy APiscataway, New Jersey: IEEE 2004Texto completo disponível |
24 |
Material Type: Ata de Congresso
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A 0.1-13 GHz Wide Range Multi-Modulus Divider with Adaptive Sensitivity for Broad Band OperationKreissig, Martin ; Buhr, Simon ; El-Shennawy, Mohammed ; Ellinger, Frank2018 IEEE 61st International Midwest Symposium on Circuits and Systems (MWSCAS), 2018, p.901-904IEEETexto completo disponível |
25 |
Material Type: Ata de Congresso
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A 0.1-1.5 GHz all-digital phase inversion delay-locked loopSangwoo Han ; Taejin Kim ; Jongsun Kim2013 IEEE Asian Solid-State Circuits Conference (A-SSCC), 2013, p.341-344IEEETexto completo disponível |
26 |
Material Type: Ata de Congresso
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A 0.1-1.5GHz dual-mode Class-AB/Class-F power amplifier in 65nm CMOSYun Yin ; Baoyong Chi ; Zhihua Wang2013 IEEE 56th International Midwest Symposium on Circuits and Systems (MWSCAS), 2013, p.372-375IEEETexto completo disponível |
27 |
Material Type: Ata de Congresso
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A 0.1-1.8 GHz, 100 W GaN HEMT Power Amplifier ModuleKrishnamurthy, K ; Lieu, D ; Vetury, R ; Martin, J2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2010, p.1-4IEEETexto completo disponível |
28 |
Material Type: Ata de Congresso
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A 0.1-25.5-GHz Differential Cascaded-Distributed Amplifier in 0.18- μm CMOS TechnologyChihun Lee ; Lan-Chou Cho ; Shen-Iuan Liu2005 IEEE Asian Solid-State Circuits Conference, 2005, p.129-132IEEETexto completo disponível |
29 |
Material Type: Ata de Congresso
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A 0.1 - 50 GHz SiGe HBT distributed amplifier employing constant-k m-derived sectionsAguirre, J. ; Plett, C.IEEE MTT-S International Microwave Symposium Digest, 2003, 2003, Vol.2, p.923-926 vol.2IEEETexto completo disponível |
30 |
Material Type: Ata de Congresso
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A 0.1-5.0GHz self-calibrated SDR transmitter with −62.6dBc CIM3 in 65nm CMOSYun Yin ; Yanqiang Gao ; Zhihua Wang ; Baoyong Chi2015 IEEE Custom Integrated Circuits Conference (CICC), 2015, p.1-4IEEETexto completo disponível |