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11
Influence of the gate oxide tunneling effect on the extraction of the silicon film and front oxide thickness in SOI nMOSFET
Influence of the gate oxide tunneling effect on the extraction of the silicon film and front oxide thickness in SOI nMOSFET
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Influence of the gate oxide tunneling effect on the extraction of the silicon film and front oxide thickness in SOI nMOSFET

A.G. Paiola Aparecido Sirley Nicolett; João Antonio Martino 1959-; International Symposium on Microelectronics Technology and Devices SBMICRO (20. 2005 Florianópolis)

Claeys, C.; Swart, J. W.; Morimoto, N. I.; Verdonck, P., eds. Microelectronics Technology and Devices SBMICRO 2005 Pennington : The Electrochemical Society, 2005. Proceedings v. 2005-08

Pennington The Electrochemical Society 2005

Item não circula. Consulte sua biblioteca.(Acessar)

12
Potential of improved gain in operational transconductance amplifier using 0,5 Mm graded-channel SOI nMOSFET for applications in the gigahertz range
Potential of improved gain in operational transconductance amplifier using 0,5 Mm graded-channel SOI nMOSFET for applications in the gigahertz range
Material Type:
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Potential of improved gain in operational transconductance amplifier using 0,5 Mm graded-channel SOI nMOSFET for applications in the gigahertz range

Salvador Pinillos Gimenez Marcelo Antonio Pavanello; João Antonio Martino 1959-; Denis Flandre; International Symposium on Microelectronics Technology and Devices SBMICRO (20. 2005 Florianópolis)

Claeys, C.; Swart, J. W.; Morimoto, N. I.; Verdonck, P., eds. Microelectronics Technology and Devices SBMICRO 2005 Pennington : The Electrochemical Society, 2005. Proceedings v. 2005-08

Pennington The Electrochemical Society 2005

Item não circula. Consulte sua biblioteca.(Acessar)

13
Comparison between bulk and floating body partially depleted SOI nMOSFETs for high frequency analog applications operating from 300 K down to 95 K
Comparison between bulk and floating body partially depleted SOI nMOSFETs for high frequency analog applications operating from 300 K down to 95 K
Material Type:
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Comparison between bulk and floating body partially depleted SOI nMOSFETs for high frequency analog applications operating from 300 K down to 95 K

Marcelo Antonio Pavanello João Antonio Martino 1959-; Eddy Simoen; Cor Claeys; International Symposium on Microelectronics Technology and Devices SBMICRO (20. 2005 Florianópolis)

Claeys, C.; Swart, J. W.; Morimoto, N. I.; Verdonck, P., eds. Microelectronics Technology and Devices SBMICRO 2005 Pennington : The Electrochemical Society, 2005. Proceedings v. 2005-08

Pennington The Electrochemical Society 2005

Item não circula. Consulte sua biblioteca.(Acessar)

14
Analysis of the linear kink effect in partially depleted SOI nMOSFETs
Analysis of the linear kink effect in partially depleted SOI nMOSFETs
Material Type:
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Analysis of the linear kink effect in partially depleted SOI nMOSFETs

Paula Ghedini Der Agopian João Antonio Martino 1959-; Eddy Simoen; Cor Claeys; International Symposium on Microelectronics Technology and Devices SBMICRO (20. 2005 Florianópolis)

Claeys, C.; Swart, J. W.; Morimoto, N. I.; Verdonck, P., eds. Microelectronics Technology and Devices SBMICRO 2005 Pennington : The Electrochemical Society, 2005. Proceedings v. 2005-08

Pennington The Electrochemical Society 2005

Item não circula. Consulte sua biblioteca.(Acessar)

15
Temperature and oxide thickness influence on the generation lifetime determination in partially depleted SOI nMOSFETs
Temperature and oxide thickness influence on the generation lifetime determination in partially depleted SOI nMOSFETs
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Temperature and oxide thickness influence on the generation lifetime determination in partially depleted SOI nMOSFETs

Milene Galeti João Antonio Martino 1959-; Eddy Simoen; Cor Claeys; International Symposium on Microelectronics Technology and Devices SBMICRO (20. 2005 Florianópolis)

Claeys, C.; Swart, J. W.; Morimoto, N. I.; Verdonck, P., eds. Microelectronics Technology and Devices SBMICRO 2005 Pennington: The Electrochemical Society, 2005. Proceedings v. 2005-08

Pennington The Electrochemical Society 2005

Item não circula. Consulte sua biblioteca.(Acessar)

16
An improved model for the triangular SOI misalignment test structure
An improved model for the triangular SOI misalignment test structure
Material Type:
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An improved model for the triangular SOI misalignment test structure

Renato Camargo Giacomini João Antonio Martino 1959-; Symposium on Microelectronics Technology and Devices SBMICRO (19. 2004 Porto Galinhas)

Santos, E. J. B.; Ribas, R. P.; Swart, J. eds Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03 Pennington : The Electrochemical Society, 2004

Pennington The Electrochemical Society 2004

Item não circula. Consulte sua biblioteca.(Acessar)

17
SOI technology characterization using SOI-MOS capacitor
SOI technology characterization using SOI-MOS capacitor
Material Type:
Artigo 		Adicionar ao Meu Espaço

SOI technology characterization using SOI-MOS capacitor

Victor Sonnenberg João Antonio Martino 1959-

Solid-State Electronics London: Pergamon Press, 2005

London 2005

Item não circula. Consulte sua biblioteca.(Acessar)

18
SOI technology characterization using SOI-MOS capacitor
SOI technology characterization using SOI-MOS capacitor
Material Type:
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SOI technology characterization using SOI-MOS capacitor

Victor Sonnenberg João Antonio Martino 1959-

Solid-State Electronics London: Pergamon Press, 2005

London 2005

Item não circula. Consulte sua biblioteca.(Acessar)

19
A new method for determination of the fixed charge density at the buried oxide/underlying substrate interface in SOI MOSFETs
A new method for determination of the fixed charge density at the buried oxide/underlying substrate interface in SOI MOSFETs
Material Type:
Livro 		Adicionar ao Meu Espaço

A new method for determination of the fixed charge density at the buried oxide/underlying substrate interface in SOI MOSFETs

Marcelo Antonio Pavanello João Antonio Martino 1959-; Symposium Silicon-on-Insulator Technology and Devices (3d 1997 Paris, France)

Cristoloveanu, S et al Proceedings 3. Symposium on Silicon-on-Insulator Technology and Devices Pennington: The Electrochemical Society, 1997

Pennington The Electrochemical Society 1997

Item não circula. Consulte sua biblioteca.(Acessar)

20
Implementation of tunable resistors using graded-channel SOI MOSFETs operating in cryogenic environments
Implementation of tunable resistors using graded-channel SOI MOSFETs operating in cryogenic environments
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Implementation of tunable resistors using graded-channel SOI MOSFETs operating in cryogenic environments

Marcelo Antonio Pavanello Antonio Cerdeira; João Antonio Martino 1959-; Miguel A Alemán; Denis Flandre; International Symposium on Microelectronics Technology and Devices SBMICRO (20. 2005 Florianópolis)

Claeys, C.; Swart, J. W.; Morimoto, N. I.; Verdonck, P., eds. Microelectronics Technology and Devices SBMICRO 2005 Pennington : The Electrochemical Society, 2005. Proceedings v. 2005-08

Pennington The Electrochemical Society 2005

Item não circula. Consulte sua biblioteca.(Acessar)

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Deste Autor:

  1. Martino, J
  2. Claeys, C
  3. Simoen, E
  4. Agopian, P
  5. Pavanello, M

Neste Assunto:

  1. Microeletrônica
  2. Transistores
  3. Semicondutores
  4. Circuitos Integrados
  5. Soi Technology

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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