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1
A simple method to model nonrectangular-gate layout in SOI MOSFETs
A simple method to model nonrectangular-gate layout in SOI MOSFETs
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Artigo de Congresso 		Adicionar ao Meu Espaço

A simple method to model nonrectangular-gate layout in SOI MOSFETs

Renato Camargo Giacomini João Antonio Martino 1959-; International Symposium on Microelectronics Technology and Devices SBMICRO (20. 2005 Florianópolis)

Claeys, C.; Swart, J. W.; Morimoto, N. I.; Verdonck, P., eds. Microelectronics Technology and Devices SBMICRO 2005 Pennington : The Electrochemical Society, 2005. Proceedings v. 2005-08

Pennington The Electrochemical Society 2005

Item não circula. Consulte sua biblioteca.(Acessar)

2
An improved model for the triangular SOI misalignment test structure
An improved model for the triangular SOI misalignment test structure
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An improved model for the triangular SOI misalignment test structure

Renato Camargo Giacomini João Antonio Martino 1959-; Symposium on Microelectronics Technology and Devices SBMICRO (19. 2004 Porto Galinhas)

Santos, E. J. B.; Ribas, R. P.; Swart, J. eds Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03 Pennington : The Electrochemical Society, 2004

Pennington The Electrochemical Society 2004

Item não circula. Consulte sua biblioteca.(Acessar)

3
An improved current model for edgeless SOI MOSFETs
An improved current model for edgeless SOI MOSFETs
Material Type:
Livro 		Adicionar ao Meu Espaço

An improved current model for edgeless SOI MOSFETs

Renato Camargo Giacomini João Antonio Martino 1959-

Martino J.A. ed ; Pavanello, M.A. ed ; Morimoto, N.I. ed Microelectronic Technology and Devices SBMicro 2003 Pennington : Electrochemical Society, 2003

Pennington Electrochemical Society 2003

Item não circula. Consulte sua biblioteca.(Acessar)

4
An improved current model in saturation for trapezoidal finfets
An improved current model in saturation for trapezoidal finfets
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

An improved current model in saturation for trapezoidal finfets

Gustavo Martins Renato Camargo Giacomini; João Antonio Martino 1959-; International Symposium on Microelectronics Technology and Devices SBMICRO (2008 Gramado, RS)

SBMICRO 2008: Anais Pennington: The Electrochemical Society, 2008

Pennington The Electrochemical Society 2008

Item não circula. Consulte sua biblioteca.(Acessar)

5
Trapezoidal SOI FinFET analog parameters' dependence on cross-section shape
Trapezoidal SOI FinFET analog parameters' dependence on cross-section shape
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Artigo 		Adicionar ao Meu Espaço

Trapezoidal SOI FinFET analog parameters' dependence on cross-section shape

Rudolf Theoderich Bühler R Giacomini; Marcelo Antonio Pavanello; João Antonio Martino 1959-

Semiconductor Science and Technology v. 24, n.11, 2009

Bristol; Woodbury 2009

Item não circula. Consulte sua biblioteca.(Acessar)

6
Trapezoidal SOI FinFET analog parameters' dependence on cross-section shape
Trapezoidal SOI FinFET analog parameters' dependence on cross-section shape
Material Type:
Artigo 		Adicionar ao Meu Espaço

Trapezoidal SOI FinFET analog parameters' dependence on cross-section shape

Rudolf Theoderich Bühler R Giacomini; Marcelo Antonio Pavanello; João Antonio Martino 1959-

Semiconductor Science and Technology v. 24, n.11, 2009

Bristol; Woodbury 2009

Item não circula. Consulte sua biblioteca.(Acessar)

7
Sidewall angle influence on the finFET analog parameters
Sidewall angle influence on the finFET analog parameters
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Sidewall angle influence on the finFET analog parameters

Renato Camargo Giacomini João Antonio Martino 1959-; Marcelo Antonio Pavanello; International Symposium on Microelectronics Technology and Devices SBMICRO (22. (2007 Rio de Janeiro, RJ); Symposium on Integrated Circuits and Systems Design (20. 2007 Rio de Janeiro, RJ); Microelectronics Students Forum (7. 2007 Rio de Janeiro, RJ)

SBMicro 2007

Pennington The Electrochemical Society 2007

Item não circula. Consulte sua biblioteca.(Acessar)

8
Analog parameters of strained non-rectangular triplegate FinFETs
Analog parameters of strained non-rectangular triplegate FinFETs
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Analog parameters of strained non-rectangular triplegate FinFETs

Rudolf Theoderich Bühler R Giacomini (*); João Antonio Martino 1959-

Microelectronics Technology and Devices - SBMicro 2010 v.31, n.1, p. 21-28, 2010

New Jersey 2010

Item não circula. Consulte sua biblioteca.(Acessar)

9
Analog parameters of strained non-rectangular triplegate FinFETs
Analog parameters of strained non-rectangular triplegate FinFETs
Material Type:
Artigo 		Adicionar ao Meu Espaço

Analog parameters of strained non-rectangular triplegate FinFETs

Rudolf Theoderich Bühler R Giacomini (*); João Antonio Martino 1959-

Microelectronics Technology and Devices - SBMicro 2010 v.31, n.1, p. 21-28, 2010

New Jersey 2010

Item não circula. Consulte sua biblioteca.(Acessar)

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