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1
Size and shape effects in the Raman scattering by single GaN nanowires
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Article
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Size and shape effects in the Raman scattering by single GaN nanowires

Wang, J. ; Demangeot, F. ; Péchou, R. ; Bayon, C. ; Mlayah, A. ; Daudin, B.

Journal of applied physics, 2013-12, Vol.114 (22) [Peer Reviewed Journal]

Melville: American Institute of Physics

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2
Influence of rare earth doping on thermoelectric properties of SrTiO3 ceramics
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Article
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Influence of rare earth doping on thermoelectric properties of SrTiO3 ceramics

Liu, J. ; Wang, C. L. ; Li, Y. ; Su, W. B. ; Zhu, Y. H. ; Li, J. C. ; Mei, L. M.

Journal of applied physics, 2013-12, Vol.114 (22) [Peer Reviewed Journal]

Melville: American Institute of Physics

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3
Structural perspectives on the elastic and mechanical properties of metallic glasses
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Article
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Structural perspectives on the elastic and mechanical properties of metallic glasses

Wang, D. P. ; Zhu, Z. G. ; Xue, R. J. ; Ding, D. W. ; Bai, H. Y. ; Wang, W. H.

Journal of applied physics, 2013-11, Vol.114 (17), p.173505 [Peer Reviewed Journal]

Melville: American Institute of Physics

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4
Crystalline structure effect on the performance of flexible ZnO/polyimide surface acoustic wave devices
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Article
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Crystalline structure effect on the performance of flexible ZnO/polyimide surface acoustic wave devices

Zhou, Jian ; He, Xingli ; Jin, Hao ; Wang, Wenbo ; Feng, Bin ; Dong, Shurong ; Wang, Demiao ; Zou, Guangyi ; Luo, J. K.

Journal of applied physics, 2013-07, Vol.114 (4) [Peer Reviewed Journal]

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5
Magnetic field mediated low-temperature resistivity upturn in electron-doped La1−xHfxMnO3 manganite oxides
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Article
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Magnetic field mediated low-temperature resistivity upturn in electron-doped La1−xHfxMnO3 manganite oxides

Guo, E. J. ; Wang, L. ; Wu, Z. P. ; Wang, L. ; Lu, H. B. ; Jin, K. J. ; Gao, J.

Journal of applied physics, 2012-12, Vol.112 (12) [Peer Reviewed Journal]

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6
Viscosity-dependent drain current noise of AlGaN/GaN high electron mobility transistor in polar liquids
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Article
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Viscosity-dependent drain current noise of AlGaN/GaN high electron mobility transistor in polar liquids

Fang, J Y ; Lee, G Y ; Chyi, JI ; Hsu, C P ; Kang, Y W ; Fang, K C ; Kao, W L ; Yao, D J ; Hsu, CH ; Huang, Y F

Journal of applied physics, 2013-11, Vol.114 (20) [Peer Reviewed Journal]

Melville: American Institute of Physics

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7
Effect of V-defects on the performance deterioration of InGaN/GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness
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Article
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Effect of V-defects on the performance deterioration of InGaN/GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness

Le, L. C. ; Zhao, D. G. ; Jiang, D. S. ; Li, L. ; Wu, L. L. ; Chen, P. ; Liu, Z. S. ; Yang, J. ; Li, X. J. ; He, X. G. ; Zhu, J. J. ; Wang, H. ; Zhang, S. M. ; Yang, H.

Journal of applied physics, 2013-10, Vol.114 (14) [Peer Reviewed Journal]

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8
KrF laser-induced ablation and patterning of Y–Ba–Cu–O films
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Article
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KrF laser-induced ablation and patterning of Y–Ba–Cu–O films

Heitz, J. ; Wang, X. Z. ; Schwab, P. ; Bäuerle, D. ; Schultz, L.

Journal of applied physics, 1990-09, Vol.68 (5), p.2512-2514 [Peer Reviewed Journal]

United States

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9
BiPbSrCaCuO superconductors prepared by the multiple pressing and sintering process
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Article
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BiPbSrCaCuO superconductors prepared by the multiple pressing and sintering process

Wang, Weiguo ; Zhou, Meiling ; Zuo, Tieyong ; Huang, Jian ; Cai, Jianguo ; Zhou, Xianghua ; Wei, Qin

Journal of applied physics, 1990-12, Vol.68 (11), p.5939-5940 [Peer Reviewed Journal]

Woodbury, NY: American Institute of Physics

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