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1 |
Material Type: Artigo
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(110) surface states of GaAs: Sensitivity of electronic structure to surface structureChadi, D. J.Physical review. B, Condensed matter, 1978-01, Vol.18 (4), p.1800-1812 [Periódico revisado por pares]Texto completo disponível |
2 |
Material Type: Artigo
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1 T-VSe2 Nanoparticles cooperated with reduced graphene oxide as a superior cathode material for rechargeable Mg-ion batteriesGao, Yong-ping ; Zhai, Zibo ; Dong, Yujing ; Pang, Yaxi ; Chen, Jiaxin ; Li, GuoqiangApplied surface science, 2022-08, Vol.592, p.153141, Article 153141 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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Material Type: Artigo
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1T’ RexMo1−xS2–2H MoS2 Lateral Heterojunction for Enhanced Hydrogen Evolution Reaction PerformanceNguyen, Huong Thi Thanh ; Adofo, Laud Anim ; Yang, Sang‐Hyeok ; Kim, Hyung‐Jin ; Choi, Soo Ho ; Kirubasankar, Balakrishnan ; Cho, Byeong Wook ; Ben‐Smith, Andrew ; Kang, Joohoon ; Kim, Young‐Min ; Kim, Soo Min ; Han, Young‐Kyu ; Kim, Ki KangAdvanced functional materials, 2023-01, Vol.33 (3), p.n/a [Periódico revisado por pares]Hoboken: Wiley Subscription Services, IncTexto completo disponível |
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Material Type: Artigo
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2D Hexagonal SnTe monolayer: a quasi direct band gap semiconductor with strain sensitive electronic and optical propertiesFatahi, Negin ; Hoat, D. M. ; Laref, Amel ; Amirian, Shorin ; Reshak, A. H. ; Naseri, MosayebThe European physical journal. B, Condensed matter physics, 2020-02, Vol.93 (2), Article 32 [Periódico revisado por pares]Berlin/Heidelberg: Springer Berlin HeidelbergTexto completo disponível |
5 |
Material Type: Artigo
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2D Layered Materials of Rare-Earth Er-Doped MoS2 with NIR-to-NIR Down- and Up-Conversion PhotoluminescenceBai, Gongxun ; Yuan, Shuoguo ; Zhao, Yuda ; Yang, Zhibin ; Choi, Sin Yuk ; Chai, Yang ; Yu, Siu Fung ; Lau, Shu Ping ; Hao, JianhuaAdvanced materials (Weinheim), 2016-09, Vol.28 (34), p.7472-7477 [Periódico revisado por pares]Germany: Blackwell Publishing LtdTexto completo disponível |
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Material Type: Artigo
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2D MoS2-MoSe2 and MoS2-NbS2 lateral heterostructures as anode materials for LIBs/SIBsBarik, Gayatree ; Pal, SouravApplied surface science, 2022-09, Vol.596, p.153529, Article 153529 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
7 |
Material Type: Artigo
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2D NbS2 monolayer as a gas sensor for the detection of nitrogen-containing toxic gasesLi, Tongtong ; Miao, QiYang ; Wang, Yuxin ; Yang, HongyeSurfaces and interfaces, 2023-11, Vol.42, p.103336, Article 103336 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
8 |
Material Type: Artigo
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2D - SnSe2 nanoflakes on paper with 1D - NiO gate insulator based MISFET as multifunctional NIR photo switch and flexible temperature sensorVeeralingam, Sushmitha ; Badhulika, SushmeeMaterials science in semiconductor processing, 2020-01, Vol.105, p.104738, Article 104738 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
9 |
Material Type: Artigo
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31P MAS NMR and DFT study of crystalline phosphate matricesMartel, Laura ; Kovács, Attila ; Popa, Karin ; Bregiroux, Damien ; Charpentier, ThibaultSolid state nuclear magnetic resonance, 2020-02, Vol.105, p.101638-101638, Article 101638 [Periódico revisado por pares]Elsevier IncTexto completo disponível |
10 |
Material Type: Artigo
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3D Directional Assembly of Liquid Crystal MoleculesZhang, Zexu ; Deng, Chunsan ; Fan, Xuhao ; Li, Minjing ; Zhang, Mingduo ; Wang, Xinger ; Chen, Fayu ; Shi, Shaoxi ; Zhou, Yining ; Deng, Leimin ; Gao, Hui ; Xiong, WeiAdvanced materials (Weinheim), 2024-08, Vol.36 (31), p.e2401533-n/a [Periódico revisado por pares]Germany: Wiley Subscription Services, IncTexto completo disponível |