Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
---|---|---|---|
1 |
Material Type: Artigo
|
Formation of Hexagonal Germanium on AlGaAs Nanowire Surfaces by Molecular-Beam EpitaxyIlkiv, I. V. ; Kotlyar, K. P. ; Kirilenko, D. A. ; Osipov, A. V. ; Soshnikov, I. P. ; Terpitsky, A. N. ; Cirlin, G. E.Semiconductors (Woodbury, N.Y.), 2021-08, Vol.55 (8), p.678-681 [Periódico revisado por pares]Moscow: Pleiades PublishingTexto completo disponível |
|
2 |
Material Type: Artigo
|
Photoluminescence and Transmission Electron Microscopy Methods for Characterization of Super-Multiperiod A3B5 Quantum Well StructuresGoray, L. I. ; Pirogov, E. V. ; Nikitina, E. V. ; Ubyivovk, E. V. ; Gerchikov, L. G. ; Ipatov, A. N. ; Dashkov, A. S. ; Sobolev, M. S. ; Ilkiv, I. V. ; Bouravlev, A. D.Semiconductors (Woodbury, N.Y.), 2019-12, Vol.53 (14), p.1914-1917 [Periódico revisado por pares]Moscow: Pleiades PublishingTexto completo disponível |
|
3 |
Material Type: Artigo
|
Phosphorus-Based Nanowires Grown by Molecular-Beam Epitaxy on SiliconCirlin, G. E. ; Reznik, R. R. ; Samsonenko, Yu. B. ; Khrebtov, A. I. ; Kotlyar, K. P. ; Ilkiv, I. V. ; Soshnikov, I. P. ; Kirilenko, D. A. ; Kryzhanovskaya, N. V.Semiconductors (Woodbury, N.Y.), 2018-11, Vol.52 (11), p.1416-1419 [Periódico revisado por pares]Moscow: Pleiades PublishingTexto completo disponível |
|
4 |
Material Type: Artigo
|
MBE Growth and Structural Properties of GaP and InP Nanowires on a SiC Substrate with a Graphene LayerReznik, R. R. ; Kotlyar, K. P. ; Ilkiv, I. V. ; Soshnikov, I. P. ; Lebedev, S. P. ; Lebedev, A. A. ; Kirilenko, D. A. ; Alexeev, P. A. ; Cirlin, G. E.Semiconductors (Woodbury, N.Y.), 2018-11, Vol.52 (11), p.1428-1431 [Periódico revisado por pares]Moscow: Pleiades PublishingTexto completo disponível |
|
5 |
Material Type: Artigo
|
Electrical Properties of GaAs Nanowires Grown on Graphene/SiC Hybrid SubstratesAlekseev, P. A. ; Dunaevskiy, M. S. ; Mikhailov, A. O. ; Lebedev, S. P. ; Lebedev, A. A. ; Ilkiv, I. V. ; Khrebtov, A. I. ; Bouravleuv, A. D. ; Cirlin, G. E.Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (12), p.1611-1615 [Periódico revisado por pares]Moscow: Pleiades PublishingTexto completo disponível |
|
6 |
Material Type: Artigo
|
Nonlocal Boundary-Value Problem for an Equation with Differentiation Operator z ∂/∂z in a Refined Sobolev ScaleIlkiv, V. S. ; Strap, N. І. ; Volyanska, І. І.Journal of mathematical sciences (New York, N.Y.), 2023-07, Vol.273 (6), p.885-900 [Periódico revisado por pares]Cham: Springer International PublishingTexto completo disponível |
|
7 |
Material Type: Artigo
|
Pecularities of the Changes of NO-Synthase/Arginase System in Digestive Organs Under The Conditions of Stress and COX-1/COX-2, COX-2/5-LOX BlockageFomenko, I.S ; Panasyuk, N.B ; Ilkiv, I.I ; Bondarchuk, T.I ; Sklyarov, P.A ; Yemelyanenko, V.Y ; Denisenko, N.V ; Biletska, L.P ; Sklyarov, A.YDigestive diseases and sciences, 2022-05, Vol.59 (8), p.1654 [Periódico revisado por pares]SpringerTexto completo disponível |
|
8 |
Material Type: Artigo
|
Nonlocal Boundary-Value Problem for a Second-Order Partial Differential Equation in an Unbounded StripVolyanska, I. I. ; Ilkiv, V. S. ; Symotyuk, M. M.Ukrainian mathematical journal, 2019-03, Vol.70 (10), p.1585-1593 [Periódico revisado por pares]New York: Springer USTexto completo disponível |
|
9 |
Material Type: Artigo
|
Growth and optical properties of filamentary GaN nanocrystals grown on a hybrid SiC/Si(111) substrate by molecular beam epitaxyReznik, R. R. ; Kotlyar, K. P. ; Il’kiv, I. V. ; Soshnikov, I. P. ; Kukushkin, S. A. ; Osipov, A. V. ; Nikitina, E. V. ; Cirlin, G. E.Physics of the solid state, 2016-10, Vol.58 (10), p.1952-1955 [Periódico revisado por pares]Moscow: Pleiades PublishingTexto completo disponível |
|
10 |
Material Type: Artigo
|
Solvability of the Nonlocal Boundary-Value Problem for a System of Differential-Operator Equations in the Sobolev Scale of Spaces and in a Refined ScaleIl’kiv, V. S. ; Strap, N. I.Ukrainian mathematical journal, 2015-10, Vol.67 (5), p.690-710 [Periódico revisado por pares]New York: Springer USTexto completo disponível |