Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
---|---|---|---|
11 |
Material Type: Artigo
|
![]() |
Rapid prototyping of magnetic tunnel junctions with focused ion beam processesPersson, Anders ; Thornell, Greger ; Nguyen, HugoJournal of micromechanics and microengineering, 2010-05, Vol.20 (5), p.055039-055039 [Periódico revisado por pares]Bristol: IOP PublishingTexto completo disponível |
12 |
Material Type: Artigo
|
![]() |
Charged and neutral biexciton–exciton cascade in a single quantum dot within a photonic bandgapShirane, M. ; Igarashi, Y. ; Ota, Y. ; Nomura, M. ; Kumagai, N. ; Ohkouchi, S. ; Kirihara, A. ; Ishida, S. ; Iwamoto, S. ; Yorozu, S. ; Arakawa, Y.Physica. E, Low-dimensional systems & nanostructures, 2010-09, Vol.42 (10), p.2563-2566 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
13 |
Material Type: Artigo
|
![]() |
Characteristics of gravure printed InGaZnO thin films as an active channel layer in thin film transistorsChoi, Yuri ; Kim, Gun Hee ; Jeong, Woong Hee ; Kim, Hyun Jae ; Chin, Byung Doo ; Yu, Jae-WoongThin solid films, 2010-09, Vol.518 (22), p.6249-6252 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
14 |
Material Type: Artigo
|
![]() |
Coherent spin precession of electrons and excitons in charge tunable InP quantum dotsMasumoto, Yasuaki ; Kawana, Keisuke ; Tomimoto, ShinichiPhysica. E, Low-dimensional systems & nanostructures, 2010-09, Vol.42 (10), p.2493-2496 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
15 |
Material Type: Artigo
|
![]() |
Effects of post plasma treatment on material properties and device characteristics in indium zinc oxide thin film transistorsKim, Won ; Bang, Jung-Hwan ; Uhm, Hyun-Seok ; Lee, Sang-Hyuk ; Park, Jin-SeokThin solid films, 2010-12, Vol.519 (5), p.1573-1577 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
16 |
Material Type: Artigo
|
![]() |
High performance low temperature solution-processed zinc oxide thin film transistorTheissmann, R. ; Bubel, S. ; Sanlialp, M. ; Busch, C. ; Schierning, G. ; Schmechel, R.Thin solid films, 2011-06, Vol.519 (16), p.5623-5628 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
17 |
Material Type: Artigo
|
![]() |
Light-emitting diodes composed of n-ZnO and p-Si nanowires constructed on plastic substrates by dielectrophoresisKim, Kwangeun ; Moon, Taeho ; Lee, Myeongwon ; Kang, Jeongmin ; Jeon, Youngin ; Kim, SangsigSolid state sciences, 2011-09, Vol.13 (9), p.1735-1739 [Periódico revisado por pares]Issy-les-Moulineaux: Elsevier Masson SASTexto completo disponível |
18 |
Material Type: Artigo
|
![]() |
Multicomponent oxide thin-film transistors fabricated by a double-layer inkjet printing processOlziersky, Antonis ; Vilà, Anna ; Morante, Juan RamónThin solid films, 2011-12, Vol.520 (4), p.1334-1340 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
19 |
Material Type: Artigo
|
![]() |
Threshold voltage shift by controlling Ga in solution processed Si–In–Zn–O thin film transistorsChoi, Jun Young ; Kim, SangSig ; Lee, Sang YeolThin solid films, 2012-03, Vol.520 (10), p.3774-3777 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
20 |
Material Type: Artigo
|
![]() |
One step self-aligned multilayer patterning process for the fabrication of organic complementary circuits in combination with inkjet printingLi, Shunpu ; Chen, Weining ; Chu, Daping ; Roy, SaibalOrganic electronics, 2012-05, Vol.13 (5), p.737-743 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |