Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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{0 0 1}-Facet-Exposed Ag 4 V 2 O 7 Nanoplates: Additive-Free Hydrothermal Synthesis and Enhanced Photocatalytic ActivityVan, Nguyen Duc ; Le, Ngo Thi HongJournal of nanomaterials, 2018-10, Vol.2018, p.1-7 [Periódico revisado por pares]Texto completo disponível |
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2 |
Material Type: Artigo
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(0 0 2)-oriented growth and morphologies of ZnO thin films prepared by sol-gel methodGuo, Dongyun ; Ju, Yang ; Fu, Chengju ; Huang, Zhixiong ; Zhang, LianmengMaterials science--Poland, 2016-09, Vol.34 (3), p.555-563 [Periódico revisado por pares]De GruyterTexto completo disponível |
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3 |
Material Type: Artigo
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0.00035 mm2 on-chip leakage sensing unit for various devices in 10 nm FinFET processOh, G.-G ; Lee, Y.-W ; Lee, BElectronics letters, 2018-02, Vol.54 (4), p.213-215 [Periódico revisado por pares]The Institution of Engineering and TechnologyTexto completo disponível |
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4 |
Material Type: Artigo
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0.00035 mm 2 on‐chip leakage sensing unit for various devices in 10 nm FinFET processOh, G.‐G. ; Lee, Y.‐W. ; Lee, B.Electronics letters, 2018-02, Vol.54 (4), p.213-215 [Periódico revisado por pares]Texto completo disponível |
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5 |
Material Type: Artigo
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0.0012 mm super( 2), 8 mW, single-to-differential converter with < 1.1% data cross error and < 3.4 ps RMS jitter up to 14 Gbit/s data rateChen, Yong ; Mak, Pui-In ; Zhang, Li ; Qian, He ; Wang, YanElectronics letters, 2013-05, Vol.49 (11), p.1-1 [Periódico revisado por pares]Texto completo disponível |
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6 |
Material Type: Artigo
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0.0012 mm2, 8 mW, single-to-differential converter with < 1.1% data cross error and < 3.4 ps RMS jitter up to 14 Gbit/s data rateChen, Yong ; Mak, Pui-In ; Zhang, Li ; Qian, He ; Wang, YanElectronics letters, 2013-05, Vol.49 (11), p.692-694 [Periódico revisado por pares]Stevenage: The Institution of Engineering and TechnologyTexto completo disponível |
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7 |
Material Type: Artigo
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0.0012 mm^sup 2^, 8 mW, single-to-differential converter with < 1.1% data cross error and < 3.4 ps RMS jitter up to 14 Gbit/s data rateChen, Yong ; Mak, Pui-In ; Zhang, Li ; Qian, He ; Wang, YanElectronics letters, 2013-05, Vol.49 (11), p.1 [Periódico revisado por pares]Stevenage: John Wiley & Sons, IncTexto completo disponível |
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8 |
Material Type: Artigo
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0.0012 mm 2 , 8 mW, single‐to‐differential converter with < 1.1% data cross error and < 3.4 ps RMS jitter up to 14 Gbit/s data rateChen, Yong ; Mak, Pui‐In ; Zhang, Li ; Qian, He ; Wang, YanElectronics letters, 2013-05, Vol.49 (11), p.692-694 [Periódico revisado por pares]Texto completo disponível |
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9 |
Material Type: Artigo
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0.0045 mm super(2) 15.8 mu W three-stage amplifier driving l0x-wide (0.15-1.5 nF) capacitive loads with >50[degrees] phase marginYan, Zushu ; Mak, Pui-In ; Law, Man-Kay ; Martins, Rui PauloElectronics letters, 2015-03, Vol.51 (6), p.454-456 [Periódico revisado por pares]Texto completo disponível |
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10 |
Material Type: Artigo
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0.0045 mm2 15.8 µW three-stage amplifier driving 10×-wide (0.15–1.5 nF) capacitive loads with >50° phase marginYan, Zushu ; Mak, Pui-In ; Law, Man-Kay ; Martins, Rui PauloElectronics letters, 2015-03, Vol.51 (6), p.454-456 [Periódico revisado por pares]The Institution of Engineering and TechnologyTexto completo disponível |