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Resultados de 11 a 20 de 40  para Produção Intelectual da USP

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11
A simple analytical model of graded-channel SOI nMOSFET transconductance
A simple analytical model of graded-channel SOI nMOSFET transconductance
Material Type:
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A simple analytical model of graded-channel SOI nMOSFET transconductance

Salvador Pinillos Gimenez Marcelo Antonio Pavanello; João Antonio Martino 1959-; International Symposium on Microelectronics Technology and Devices SBMICRO (17 2002 Porto Alegre, RS)

Morimoto, N.I.; Ribas, R.P.; Verdonck, P.B., eds Microelectronics Technology and Devices SBMICRO 2002 Pennington : The Electrochemical Society, 2002

Pennington The Electrochemical Society 2002

Item não circula. Consulte sua biblioteca.(Acessar)

12
Determination of the silicon film thickness and back oxide charge density on graded-channel SOI nMOSFETs
Determination of the silicon film thickness and back oxide charge density on graded-channel SOI nMOSFETs
Material Type:
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Determination of the silicon film thickness and back oxide charge density on graded-channel SOI nMOSFETs

Aparecido Sirley Nicolett João Antonio Martino 1959-; Marcelo Antonio Pavanello; International Symposium on Microelectronics Technology and Devices SBMICRO (18 2003 São Paulo, SP)

Martino J.A. ed ; Pavanello, M.A. ed ; Morimoto, N.I. ed Microelectronic Technology and Devices SBMicro 2003 Pennington : Electrochemical Society, 2003

Pennington Electrochemical Society 2003

Item não circula. Consulte sua biblioteca.(Acessar)

13
Evaluation of the channel engineering impact on the analog performance of deep-submicrometer partially depleted SOI MOSFETS at low temperatures
Evaluation of the channel engineering impact on the analog performance of deep-submicrometer partially depleted SOI MOSFETS at low temperatures
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Evaluation of the channel engineering impact on the analog performance of deep-submicrometer partially depleted SOI MOSFETS at low temperatures

Marcelo Antonio Pavanello João Antonio Martino 1959-; Eddy Simoen; Cor Claeys; International Symposium on Microelectronics Technology and Devices SBMICRO (19. 2004 Porto Galinhas)

Santos, E. J. P.; Ribas, R. P.; Swart, J. eds Microelectronic Technology and Devices SBMicro 2004. Proceedings, v. 2003-9 Pennington : The Electrochemical Society, 2004.

Pennington The Electrochemical Society 2004

Item não circula. Consulte sua biblioteca.(Acessar)

14
A physically-based continuous model for graded-channel SOI MOSFET
A physically-based continuous model for graded-channel SOI MOSFET
Material Type:
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A physically-based continuous model for graded-channel SOI MOSFET

Marcelo Antonio Pavanello Benjamin Iniguez; João Antonio Martino 1959-; Denis Flandre; International Symposium on Microelectronics Technology and Devices SBMICRO (17 2002 Porto Alegre, RS)

Morimoto, N.I.; Ribas, R.P.; Verdonck, P.B., eds Microelectronics Technology and Devices SBMICRO 2002 Pennington : The Electrochemical Society, 2002

Pennington The Electrochemical Society 2002

Item não circula. Consulte sua biblioteca.(Acessar)

15
Analysis of deep submicrometer bulk and fully depleted soi nmosfet analog operation at cryogenic temperatures
Analysis of deep submicrometer bulk and fully depleted soi nmosfet analog operation at cryogenic temperatures
Material Type:
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Analysis of deep submicrometer bulk and fully depleted soi nmosfet analog operation at cryogenic temperatures

Marcelo Antonio Pavanello João Antonio Martino 1959-; Eddy Simoen; Cor Claeys; International Symposium on Silicon-on-Insulator Technology and Devices (12 2005 Quebec, Canada)

Celler,G.K; Cristoloveanu, S.; Gámiz, F.; Fossum, J.G.; Izumi, K. International Symposium on Silicon-on-Insulator Technology and Devices XII: proceedings Pennington: The Electrochemical Society, 2005

Pennington The Electrochemical Society 2005

Item não circula. Consulte sua biblioteca.(Acessar)

16
Implementation of high performance operational transconductance amplifiers using graded-channel SOI nMOSFETs
Implementation of high performance operational transconductance amplifiers using graded-channel SOI nMOSFETs
Material Type:
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Implementation of high performance operational transconductance amplifiers using graded-channel SOI nMOSFETs

Salvador Pinillos Gimenez Marcelo Antonio Pavanello; João Antonio Martino 1959-; Denis Flandre; International Symposium on Silicon-on-Insulator Technology and Devices (12 2005 Quebec, Canada)

Celler,G.K; Cristoloveanu, S.; Gámiz, F.; Fossum, J.G.; Izumi, K. International Symposium on Silicon-on-Insulator Technology and Devices XII: proceedings Pennington: The Electrochemical Society, 2005

Pennington The Electrochemical Society 2005

Item não circula. Consulte sua biblioteca.(Acessar)

17
Analysis of harmonic distortion in graded-channel SOI MOSFETs at high temperatures
Analysis of harmonic distortion in graded-channel SOI MOSFETs at high temperatures
Material Type:
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Analysis of harmonic distortion in graded-channel SOI MOSFETs at high temperatures

Marcelo Antonio Pavanello Antonio Cerdeira; João Antonio Martino 1959-; Miguel A Alemán; Denis Flandre; International Symposium on Microelectronics Technology and Devices SBMICRO (19. 2004 Porto Galinhas)

Santos, E. J. P.; Ribas, R. P.; Swart, J. eds Microelectronic technology and devices SBMicro 2004. Proceedings, v. 2004-03 Pennington : The Electrochemical Society, 2004

Pennington The Electrochemical Society 2004

Item não circula. Consulte sua biblioteca.(Acessar)

18
Analysis of HALO implant influence on the self-heating and self-heating enhanced impact ionization on 0.13 Mm floating-body partially-depleted SOI MOSFET at low temperature
Analysis of HALO implant influence on the self-heating and self-heating enhanced impact ionization on 0.13 Mm floating-body partially-depleted SOI MOSFET at low temperature
Material Type:
Livro 		Adicionar ao Meu Espaço

Analysis of HALO implant influence on the self-heating and self-heating enhanced impact ionization on 0.13 Mm floating-body partially-depleted SOI MOSFET at low temperature

Marcelo Antonio Pavanello João Antonio Martino 1959-; Eddy Simoen; A Mercha; Cor Claeys; H Van Meer; K De Meyer; International Symposium on SOI Technology and Devices (11 2003)

Cristoloveanu, S. et al Silicon-on-Insulator Technology and Devices XI. Pennington: Electrochemical Society, 2003

Pennington The Electrochemical Society 2003

Item não circula. Consulte sua biblioteca.(Acessar)

19
Behavior of graded channel SOI gate-all-around NMOSFET devices at high temperatures
Behavior of graded channel SOI gate-all-around NMOSFET devices at high temperatures
Material Type:
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Behavior of graded channel SOI gate-all-around NMOSFET devices at high temperatures

Carolina Davanzzo Gomes dos Santos Marcelo Antonio Pavanello; João Antonio Martino 1959-; Denis Flandre; Jean-Pierre Raskin; International Symposium on Microelectronics Technology and Devices SBMICRO (19. 2004 Porto de Galinhas)

Santos, E. J. P.; Ribas, R. P.; Swart, J. eds Microelectronic technology and Devices SBMicro 2004. Proceedings, v. 2004-03 Pennington : The Electrochemical Society, 2004.

Pennington The Electrochemical Society 2004

Item não circula. Consulte sua biblioteca.(Acessar)

20
A study on the self-heating effect in deep-submicrometer partially depleted SOI MOSFETs at low temperatures
A study on the self-heating effect in deep-submicrometer partially depleted SOI MOSFETs at low temperatures
Material Type:
Livro 		Adicionar ao Meu Espaço

A study on the self-heating effect in deep-submicrometer partially depleted SOI MOSFETs at low temperatures

Marcelo Antonio Pavanello João Antonio Martino 1959-; Eddy Simoen; A Mercha; Cor Claeys; K De Meyer; International Symposium on Microelectronics Technology and Devices SBMICRO 2003 (18 2003 São Paulo)

Martino J.A. ed ; Pavanello, M.A. ed ; Morimoto, N.I. ed Microelectronic Technology and Devices SBMicro 2003 Pennington : Electrochemical Society, 2003

Pennington Electrochemical Society 2003

Item não circula. Consulte sua biblioteca.(Acessar)

Resultados de 11 a 20 de 40  para Produção Intelectual da USP

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