Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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11 |
Material Type: Ata de Congresso
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0.1-μm high-aspect-ratio pattern replication and linewidth controlChen, Zheng ; Vladimirsky, Yuli ; Cerrina, Franco ; Lai, Barry P ; Yun, Wenbing ; Gluskin, Efim SSPIE proceedings series, 1998, Vol.3331, p.591-600Bellingham WA: SPIETexto completo disponível |
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12 |
Material Type: Artigo
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0.1-μm high performance double heterojunction In0.32Al0.68As/In0.33Ga0.67As metamorphic HEMTs on GaAsZaknoune, M ; Cordier, Y ; Bollaert, S ; Ferre, D ; Théron, D ; Crosnier, YSolid-state electronics, 2000-09, Vol.44 (9), p.1685-1688 [Periódico revisado por pares]Texto completo disponível |
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13 |
Material Type: Artigo
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0.1-μm InAlAs/InGaAs HEMTS with an InP-recess-etch stopper grown by MOCVDEnoki, Takatomo ; Ito, Hiroshi ; Ikuta, Kenji ; Umeda, Yohtaro ; Ishii, YasunobuMicrowave and optical technology letters, 1996-02, Vol.11 (3), p.135-139 [Periódico revisado por pares]New York: Wiley Subscription Services, Inc., A Wiley CompanyTexto completo disponível |
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14 |
Material Type: Ata de Congresso
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0.1 μm InGaAs/InAlAs/InP HEMT MMICs: a flight qualified technologyCHOU, Y. C ; LEUNG, D ; LAI, R ; GRUNDBACHER, R ; BARSKY, M ; KAN, Q ; TSAI, RTechnical digest - IEEE Gallium Arsenide Integrated Circuit Symposium, 2002, p.77-80Piscataway NJ: IEEETexto completo disponível |
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15 |
Material Type: Ata de Congresso
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0.1 μm RFCMOS on high resistivity substrates for system on chip (SOC) applicationsYANG, J.-Y ; BENAISSA, K ; ASHBURN, S ; MADHANI, P ; BLYTHE, T ; SHICHIJO, H ; CRENSHAW, D ; WILLIAMS, B ; SRIDHAR, S ; AI, J ; BOSELLI, G ; ZHAO, S ; TANG, S.-P ; MAHALINGAM, NPiscataway NJ: IEEE 2002Texto completo disponível |
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16 |
Material Type: Artigo
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0.11-2.5 GHz All-digital DLL for Mobile Memory Interface with Phase Sampling Window Adaptation to Reduce Jitter Accumulation채주형 ; 김민오 ; 홍기문 ; 박지환 ; 고형준 ; 신우열 ; 지한규 ; 정덕균 ; 김수환JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2017, 17(3), 75, pp.411-424대한전자공학회Texto completo disponível |
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17 |
Material Type: Ata de Congresso
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0.11-μm imaging in KrF lithography using dipole illuminationEurlings, Mark ; van Setten, Eelco ; Torres, Juan Andres ; Dusa, Mircea V ; Socha, Robert J ; Capodieci, Luigi ; Finders, JoSPIE proceedings series, 2001, Vol.4404, p.266-278Bellingham WA: SPIETexto completo disponível |
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18 |
Material Type: Artigo
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0.12 μm optical lithography performances using an alternating DUV phase shift maskTrouiller, Y. ; Buffet, N. ; Mourier, T. ; Schiavone, P. ; Quere, Y.Microelectronic engineering, 1998-03, Vol.41, p.61-64 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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19 |
Material Type: Ata de Congresso
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0.13 μm CMOS Cartesian loop transmitter IC with fast calibration and switching scheme from opened to closed loopOtaka, S. ; Hosoya, M. ; Ishihara, H. ; Hashimoto, T. ; Araki, Y.ESSCIRC 2008 - 34th European Solid-State Circuits Conference, 2008, p.342-345IEEETexto completo disponível |
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20 |
Material Type: Artigo
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0.13-μM CMOS Q-band leveled-LO subharmonic mixer with injection-locked frequency-divider quadrature generatorSu, Jen-Yi ; Meng, Chinchun ; Wu, Po-Yi ; Huang, Guo-WeiMicrowave and optical technology letters, 2009-11, Vol.51 (11), p.2663-2665 [Periódico revisado por pares]Hoboken: Wiley Subscription Services, Inc., A Wiley CompanyTexto completo disponível |