Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
---|---|---|---|
1 |
Material Type: Artigo
|
0-3 PIEZOCERAMIC-THERMOPLASTIC POLYMER COMPOSITESWilliams, M A ; Hall, D A ; Wood, A K Bell, A ; Institute of Materials ; Lee, WEBr.Ceram.Proc , no. 52, pp. 217-223. 1994, 1993-12 (52), p.217-223Sem texto completo |
|
2 |
Material Type: Artigo
|
0.1-µm Gate-length pseudomorphic HEMT'sChao, P.C. ; Tiberio, R.C. ; Duh, K.-H.G. ; Smith, P.M. ; Ballingall, J.M. ; Lester, L.F. ; Lee, B.R. ; Jabra, A. ; Gifford, G.G.IEEE electron device letters, 1987-10, Vol.8 (10), p.489-491 [Periódico revisado por pares]IEEETexto completo disponível |
|
3 |
Material Type: Artigo
|
0.1-mu m Gate-length pseudomorphic HEMT' sChao, P C ; Tiberio, R C ; Duh, K-H G ; Smith, P M ; Ballingall, J M ; Lester, L F ; Lee, B R ; Jabra, A ; Gifford, G GIEEE electron device letters, 1987-10, Vol.8 (10), p.489-491 [Periódico revisado por pares]Texto completo disponível |
|
4 |
Material Type: Artigo
|
0.1 Reactive gas measurements at the Cape Verde Atmospheric ObservatoryRead, K ; Carpenter, L ; Lewis, A ; Lee, J ; Hopkins, J ; Mendes, L ; Pilling, M ; Plane, J ; Mahajan, A ; Saiz-Lopez, AGeophysical research abstracts, 2007-01Texto completo disponível |
|
5 |
Material Type: Artigo
|
0.1-μm gate-length pseudomorphic HEMT'sCHAO, P. C ; TIBERIO, R. C ; DUH, K.-H. G ; SMITH, P. M ; BALLINGALL, J. M ; LESTER, L. F ; LEE, B. R ; JABRA, A ; GIFFORD, G. GIEEE electron device letters, 1987, Vol.8 (10), p.489-491 [Periódico revisado por pares]New York, NY: Institute of Electrical and Electronics EngineersTexto completo disponível |
|
6 |
Material Type: Artigo
|
0.18 MG FLUOCINOLONE ACETONIDE INSERT FOR THE TREATMENT OF CHRONIC POSTOPERATIVE PSEUDOPHAKIC CYSTOID MACULAR EDEMADeaner, Jordan D ; Mammo, Danny ; Gross, Andrew ; Lee, Terry ; Sharma, Sumit ; Srivastava, Sunil K ; Jaffe, Glenn J ; Grewal, Dilraj SRetina (Philadelphia, Pa.), 2023-06, Vol.43 (6), p.897-904 [Periódico revisado por pares]United StatesTexto completo disponível |
|
7 |
Material Type: Artigo
|
0.18 mu m CMOS dual-band low-noise amplifier for ZigBee developmentXuan, K ; Tsang, K F ; Lee, W C ; Lee, S CElectronics letters, 2010-01, Vol.46 (1), p.1-1 [Periódico revisado por pares]Sem texto completo |
|
8 |
Material Type: Artigo
|
0.18 [mu]m CMOS dual-band low-noise amplifier for ZigBee developmentXuan, K ; Tsang, K F ; Lee, W C ; Lee, S CElectronics letters, 2010-01, Vol.46 (1), p.1 [Periódico revisado por pares]Stevenage: John Wiley & Sons, IncSem texto completo |
|
9 |
Material Type: Artigo
|
0.18 μm CMOS dual-band low-noise amplifier for ZigBee developmentXUAN, K ; TSANG, K. F ; LEE, W. C ; LEE, S. CElectronics letters, 2010-01, Vol.46 (1), p.85-86 [Periódico revisado por pares]Stevenage: Institution of Engineering and TechnologySem texto completo |
|
10 |
Material Type: Artigo
|
0.18 [micro sign]m CMOS dual-band low-noise amplifier for ZigBee developmentXuan, K. ; Tsang, K.F. ; Lee, W.C. ; Lee, S.C.Electronics letters, 2010, Vol.46 (1), p.85 [Periódico revisado por pares]Sem texto completo |