Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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New gaseous impurity and its effect on the purity of LPE GaAsFukui, Takashi ; Kobayashi, TakeshiJournal of crystal growth, 1978-01, Vol.45, p.243-247 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
2 |
Material Type: Artigo
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Deep levels and growth conditions of LPE GaAs crystalsOkumura, Tsugunori ; Ikoma, ToshiakiJournal of crystal growth, 1978-01, Vol.45, p.459-466 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
3 |
Material Type: Artigo
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Substrate instability during the LPE growth of (Ga, In) As alloys on InAs substratesAstles, M.G. ; Dosser, O.D. ; MacLean, A.J. ; Wright, P.J.Journal of crystal growth, 1981-01, Vol.54 (3), p.485-492 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
4 |
Material Type: Artigo
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GaSb heterostructures grown by MOVPEChidley, E.T.R. ; Haywood, S.K. ; Mallard, R.E. ; Mason, N.J. ; Nicholas, R.J. ; Walker, P.J. ; Warburton, R.J.Journal of crystal growth, 1988, Vol.93 (1-4), p.70-78 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
5 |
Material Type: Artigo
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Exciton complexes in II–VI materialsGutowski, J.Journal of crystal growth, 1988-01, Vol.86 (1-4), p.528-535 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
6 |
Material Type: Artigo
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Growth of GaSb and InSb by low-pressure plasma MOVPEBehet, M. ; Stoll, B. ; Brysch, W. ; Heime, K.Journal of crystal growth, 1992-11, Vol.124 (1), p.377-382 [Periódico revisado por pares]AMSTERDAM: Elsevier B.VTexto completo disponível |
7 |
Material Type: Artigo
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Sublimation growth of high-purity ZnSe single crystals and photoluminescenceMochizuki, K. ; Masumoto, K. ; Yasuda, T. ; Segawa, Y. ; Kimoto, K.Journal of crystal growth, 1994, Vol.135 (1), p.318-322 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
8 |
Material Type: Artigo
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Preparation and electrical properties of ferroelectric (Pb,La) (Zr,Ti)O 3 thin films by metalorganic chemical vapor depositionTominaga, K. ; Sakashita, Y. ; Nakashima, H. ; Okada, M.Journal of crystal growth, 1994-12, Vol.145 (1), p.219-225 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
9 |
Material Type: Artigo
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Liquid phase epitaxy and photoluminescence characterization of p-type GaSb layers grown from Bi based meltsGladkov, P. ; Monova, E. ; Weber, J.Journal of crystal growth, 1995-01, Vol.146 (1-4), p.319-325 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
10 |
Material Type: Artigo
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Less than 10 defects/ cm2 · μm in molecular beam epitaxy grown GaAs by arsenic crackingIzumi, Shigekazu ; Hayafuji, Norio ; Sonoda, Takuji ; Takamiya, Saburo ; Mitsui, ShigeruJournal of crystal growth, 1995-05, Vol.150 (1-4), p.7-12 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |