Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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11 |
Material Type: Artigo
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0.13 µm Pattern Delineation Using KrF Excimer Laser LightImai, Akira ; Asai, Naoko ; Ueno, Takumi ; Hasegawa, Norio ; Tanaka, Toshihiko ; Tsuneo Terasawa, Tsuneo Terasawa ; Shinji Okazaki, Shinji OkazakiJapanese Journal of Applied Physics, 1994, Vol.33 (12S), p.6816 [Periódico revisado por pares]Texto completo disponível |
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12 |
Material Type: Artigo
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0.13 μm pattern delineation using KrF excimer laser lightIMAI, A ; ASAI, N ; UENO, T ; HASEGAWA, N ; TANAKA, T ; TERASAWA, T ; OKAZAKI, SJapanese journal of applied physics, 1994-12, Vol.33 (12B), p.6816-6822 [Periódico revisado por pares]Tokyo: Japanese journal of applied physicsTexto completo disponível |
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13 |
Material Type: Artigo
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0.15- mu m T-shaped gate MODFETs using BCB as low-k spacerAnda, Y ; Kawashima, K ; Nishitsuji, M ; Tanaka, TIEICE transactions on electronics, 2001-10, Vol.E84-C (10), p.1323-1327 [Periódico revisado por pares]Texto completo disponível |
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14 |
Material Type: Artigo
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0.2-10atmの酸素と平衡するBa2YCu3Ox中の酸素の定量神原, 正三 ; 大森, 直也 ; 鈴木, 亮輔 ; 大石, 敏雄 ; 小野, 勝敏Journal of the Ceramic Society of Japan (日本セラミックス協会学術論文誌), 1990/11/01, Vol.98(1143), pp.1210-1216公益社団法人 日本セラミックス協会Texto completo disponível |
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15 |
Material Type: Ata de Congresso
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0.2 mu m gate pseudomorphic inverted HEMT for high speed digital ICsTsuji, H. ; Fujishiro, H.I. ; Shikata, M. ; Tanaka, K. ; Nishi, S.[1991] GaAs IC Symposium Technical Digest, 1991, p.113-116IEEETexto completo disponível |
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16 |
Material Type: Artigo
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0.23 eV energy resolution obtained using a cold field-emission gun and a streak imaging techniqueKimoto, Koji ; Ishizuka, Kazuo ; Asaka, Toru ; Nagai, Takuro ; Matsui, YoshioMicron (Oxford, England : 1993), 2005-01, Vol.36 (5), p.465-469 [Periódico revisado por pares]England: Elsevier LtdTexto completo disponível |
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17 |
Material Type: Artigo
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0.23eV energy resolution obtained using a cold field-emission gun and a streak imaging techniqueKimoto, Koji ; Ishizuka, Kazuo ; Asaka, Toru ; Nagai, Takuro ; Matsui, YoshioMicron (Oxford, England : 1993), 2005-07, Vol.36 (5), p.465-469 [Periódico revisado por pares]Texto completo disponível |
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18 |
Material Type: Artigo
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0.2C-1.5Si-1.2Mn鋼のTRIP効果におよぼすひずみ速度の影響土田, 紀之 ; 尾﨑, 渓香鉄と鋼, 2013, Vol.99(8), pp.524-531 [Periódico revisado por pares]一般社団法人 日本鉄鋼協会Texto completo disponível |
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19 |
Material Type: Artigo
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0.3-nm SASE-FEL at PALOh, J.S ; Kim, D.E ; Kim, E.S ; Park, S.J ; Kang, H.S ; Lee, T.Y ; Koo, T.Y ; Chang, S.S ; Chung, C.W ; Nam, S.H ; Namkung, WNuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2004-08, Vol.528 (1), p.582-585 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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20 |
Material Type: Artigo
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0.3 pJ/Bit Machine Learning Resistant Strong PUF Using Subthreshold Voltage Divider ArrayVenkatesh, Abilash ; Venkatasubramaniyan, Aishwarya Bahudhanam ; Xi, Xiaodan ; Sanyal, ArindamIEEE transactions on circuits and systems. II, Express briefs, 2020-08, Vol.67 (8), p.1394-1398 [Periódico revisado por pares]New York: IEEETexto completo disponível |