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Refinado por: Base de dados/Biblioteca: Springer Nature - Springer Journals All 2022 remover
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1
Improvement of luminescence properties of Ca sub(0.8)Zn sub(0.2)TiO sub(3):Pr super(3+) prepared by hydrothermal method
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Improvement of luminescence properties of Ca sub(0.8)Zn sub(0.2)TiO sub(3):Pr super(3+) prepared by hydrothermal method

Yu, Liping ; Xia, Mao ; Chen, Xun ; Rong, Chunying ; Zhang, Jinlin ; Zhou, Wenli ; Ma, Ming ; Lian, Shixun

Journal of materials research, 2013-09, Vol.28 (18), p.2590-2597 [Periódico revisado por pares]

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Upconversion emission and paramagnetism of colloid Ba sub(2)ErF sub(7) and Ba sub(2)ErF sub(7):Yb super(3+) nanocrystals synthesized with solvothermal method
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Upconversion emission and paramagnetism of colloid Ba sub(2)ErF sub(7) and Ba sub(2)ErF sub(7):Yb super(3+) nanocrystals synthesized with solvothermal method

Gong, Lunjun ; Ma, Mo ; Xu, Changfu ; Lin, Jianguo ; Yang, Qibin

Journal of Wuhan University of Technology. Materials science edition, 2013-12, Vol.28 (6), p.1076-1081 [Periódico revisado por pares]

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3
Electronic structure and delithiation mechanism of vanadium and nickel doped Li2MnPO4F cathode material for lithium-ion batteries
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Electronic structure and delithiation mechanism of vanadium and nickel doped Li2MnPO4F cathode material for lithium-ion batteries

Chen, Rui ; Luo, Jiaolian ; Yang, Anqi ; Xie, Zhenyu ; Elnaggar, Ashraf Y. ; Liu, Baosheng ; El-Bahy, Salah M. ; Guo, Zhanhu

Journal of materials science. Materials in electronics, 2024-07, Vol.35 (19), p.1342 [Periódico revisado por pares]

New York: Springer US

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4
Numerical simulation of inorganic Cs2AgBiBr6 as a lead-free perovskite using device simulation SCAPS-1D
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Numerical simulation of inorganic Cs2AgBiBr6 as a lead-free perovskite using device simulation SCAPS-1D

Mohandes, Aminreza ; Moradi, Mahmood ; Nadgaran, Hamid

Optical and quantum electronics, 2021-06, Vol.53 (6), Article 319 [Periódico revisado por pares]

New York: Springer US

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5
Influence of reduced graphene oxide content on dielectric, optical energy band gap, and I–V characteristics of PVDF/PANI/RGO nanocomposites
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Influence of reduced graphene oxide content on dielectric, optical energy band gap, and I–V characteristics of PVDF/PANI/RGO nanocomposites

Meher, Debashish ; Suman ; Acharya, Swatee ; Sahoo, Bibhu Prasad

Journal of materials science. Materials in electronics, 2023-11, Vol.34 (31), p.2064, Article 2064 [Periódico revisado por pares]

New York: Springer US

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6
Elastic and Optoelectronic Properties of Cs2NaMCl6 (M = In, Tl, Sb, Bi)
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Elastic and Optoelectronic Properties of Cs2NaMCl6 (M = In, Tl, Sb, Bi)

Khan, Imad ; Shahab ; Haq, Izaz Ul ; Ali, Akbar ; Ali, Zahid ; Ahmad, Iftikhar

Journal of electronic materials, 2021-02, Vol.50 (2), p.456-466 [Periódico revisado por pares]

New York: Springer US

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7
Tuning the Electronic and Optical Properties of Two-Dimensional Graphene-like C 2 N Nanosheet by Strain Engineering
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Tuning the Electronic and Optical Properties of Two-Dimensional Graphene-like C 2 N Nanosheet by Strain Engineering

Phuc, Huynh V ; Tuan, Vu V ; Hieu, Nguyen N ; Ilyasov, Victor V ; Fedorov, Igor A ; Hoi, Bui D ; Phuong, Le T T ; Hieu, Nguyen V ; Feddi, Elmustapha ; Nguyen, Chuong V

Journal of electronic materials, 2018-08, Vol.47 (8), p.4594-4603 [Periódico revisado por pares]

Warrendale: Springer Nature B.V

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8
Investigation of the electronic structural and optical properties of CH3NH3HgI3 crystal
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Investigation of the electronic structural and optical properties of CH3NH3HgI3 crystal

Yao, Ming ; Xu, Gang ; Zhang, Mingtao ; Zhang, Binbin ; Zhu, Jinmeng ; Wang, Chunhai

Journal of molecular modeling, 2022-09, Vol.28 (9), p.255-255, Article 255 [Periódico revisado por pares]

Berlin/Heidelberg: Springer Berlin Heidelberg

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9
Electrical performance improvement of charge plasma-based junctionless TFET using novel coalescence of SiGe/GaAs and heterogeneous gate dielectric
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Electrical performance improvement of charge plasma-based junctionless TFET using novel coalescence of SiGe/GaAs and heterogeneous gate dielectric

Kumar, Kaushal ; Kumar, Ajay ; Sharma, Subhash Chander

Applied physics. A, Materials science & processing, 2023, Vol.129 (1), Article 23 [Periódico revisado por pares]

Berlin/Heidelberg: Springer Berlin Heidelberg

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10
Energy band alignment of 2D/3D MoS2/4H-SiC heterostructure modulated by multiple interfacial interactions
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Energy band alignment of 2D/3D MoS2/4H-SiC heterostructure modulated by multiple interfacial interactions

Zhu, Huili ; Hong, Zifan ; Zhou, Changjie ; Wu, Qihui ; Zheng, Tongchang ; Yang, Lan ; Lan, Shuqiong ; Yang, Weifeng

Frontiers of physics, 2023-02, Vol.18 (1), p.13301, Article 13301 [Periódico revisado por pares]

Beijing: Higher Education Press

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