Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Ata de Congresso
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0, 1, 2, many - A classroom occupancy monitoring system for smart public buildingsPaci, Francesco ; Brunelli, Davide ; Benini, LucaProceedings of the 2014 Conference on Design and Architectures for Signal and Image Processing, 2014, p.1-6European Electronic Chips & Systems design InitiatTexto completo disponível |
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2 |
Material Type: Ata de Congresso
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0.1 μm RFCMOS on high resistivity substrates for system on chip (SOC) applicationsYANG, J.-Y ; BENAISSA, K ; ASHBURN, S ; MADHANI, P ; BLYTHE, T ; SHICHIJO, H ; CRENSHAW, D ; WILLIAMS, B ; SRIDHAR, S ; AI, J ; BOSELLI, G ; ZHAO, S ; TANG, S.-P ; MAHALINGAM, NPiscataway NJ: IEEE 2002Texto completo disponível |
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3 |
Material Type: Ata de Congresso
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A 0.000261 mm2 Single-Channel 1 GS/s 8-Bit 3-Stage Capacitor Array-Assisted Charge-Injection DAC-Based SAR ADC in 28 nm CMOSKye, Chan-Ho ; Choo, Kyojin2023 IEEE Asian Solid-State Circuits Conference (A-SSCC), 2023, p.1-3IEEESem texto completo |
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4 |
Material Type: Ata de Congresso
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A 0.003 mm2 5.2 mW/tap 20 GBd inductor-less 5-tap analog RX-FFEBoesch, Ryan ; Zheng, Kevin ; Murmann, Boris2016 IEEE Symposium on VLSI Circuits (VLSI-Circuits), 2016, p.1-2IEEESem texto completo |
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5 |
Material Type: Ata de Congresso
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A 0.008mm2 -65dB PSR Analog-Digital Hybrid Capless LDO Using Switched-Capacitor Resistors and Frequency DetectorLi, Mohan ; Zhang, Xuan ; Wu, Tao ; Yao, Lei2023 8th International Conference on Integrated Circuits and Microsystems (ICICM), 2023, p.522-526IEEESem texto completo |
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6 |
Material Type: Ata de Congresso
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A 0.04-mm2 0.9-mW 71-dB SNDR distributed modular AS ADC with VCO-based integrator and digital DAC calibrationYeonam Yoon ; Kyoungtae Lee ; Sungjin Hong ; Xiyuan Tang ; Long Chen ; Nan Sun2015 IEEE Custom Integrated Circuits Conference (CICC), 2015, p.1-4IEEETexto completo disponível |
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7 |
Material Type: Ata de Congresso
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A 0.0487mm2 4Kx8 Metal-Gate Innovative Fuse Memory at 22nm FD-SOI with 1.2V+/-16% Program Voltage, 0.42V Vddmin, and Full TestabilityChung, Shine ; Lin, Jay ; Fang, Wen-Kuan ; Yu, Wen-Hua ; Wendt, Michael ; Prengel, Helmut ; Xu, Anmin ; Lee, Heng Kah2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2018, p.1-2IEEESem texto completo |
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8 |
Material Type: Ata de Congresso
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A 0.065mm2 19.8mW single channel calibration-free 12b 600MS/s ADC in 28nm UTBB FDSOI using FBBKumar, Ashish ; Debnath, Chandrajit ; Singh, Pratap Narayan ; Bhatia, Vivek ; Chaudhary, Shivani ; Jain, Vigyan ; Le Tual, Stephane ; Malik, RakeshESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference, 2016, p.165-168IEEESem texto completo |
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9 |
Material Type: Ata de Congresso
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A 0.06mm2 ± 50mV range −82dB THD chopper VCO-based sensor readout circuit in 40nm CMOSChih-Chan Tu ; Yu-Kai Wang ; Tsung-Hsien Lin2017 Symposium on VLSI Circuits, 2017, p.C84-C85JSAPSem texto completo |
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10 |
Material Type: Ata de Congresso
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A 0.11mm⁁2 150mW 10GBase-T transmitter in 28nm CMOS processTsun-Yuan Fan ; Tsung-Yi Chou ; Wen-Hua Chang2015 IEEE Asian Solid-State Circuits Conference (A-SSCC), 2015, p.1-4IEEESem texto completo |