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Refinado por: Nome da Publicação: Journal Of Applied Physics remover nível superior: Recursos Online remover
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1
Preparation and characterization of LiNbO3 thin films produced by chemical-vapor deposition
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Preparation and characterization of LiNbO3 thin films produced by chemical-vapor deposition

Sakashita, Yukio ; Segawa, Hideo

Journal of applied physics, 1995-06, Vol.77 (11), p.5995-5999 [Periódico revisado por pares]

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2
Dependence of electrical properties on film thickness in Pb(ZrxTi1-x)O3 thin films produced by metalorganic chemical vapor deposition
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Dependence of electrical properties on film thickness in Pb(ZrxTi1-x)O3 thin films produced by metalorganic chemical vapor deposition

SAKASHITA, Y ; SEGAWA, H ; TOMINAGA, K ; OKADA, M

Journal of applied physics, 1993-06, Vol.73 (11), p.7857-7863 [Periódico revisado por pares]

Woodbury, NY: American Institute of Physics

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3
Epitaxial growth and magnetic properties of Fe(211)
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Epitaxial growth and magnetic properties of Fe(211)

YAEGASHI, S ; KURIHARA, T ; SEGAWA, H

Journal of applied physics, 1993-10, Vol.74 (7), p.4506-4512 [Periódico revisado por pares]

Woodbury, NY: American Institute of Physics

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4
Photoluminescence properties of ZnO epitaxial layers grown on lattice-matched ScAlMgO4 substrates
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Photoluminescence properties of ZnO epitaxial layers grown on lattice-matched ScAlMgO4 substrates

Makino, T. ; Tamura, K. ; Chia, C. H. ; Segawa, Y. ; Kawasaki, M. ; Ohtomo, A. ; Koinuma, H.

Journal of applied physics, 2002-12, Vol.92 (12), p.7157-7159 [Periódico revisado por pares]

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5
Preparation and electrical properties of MOCVD-deposited PZT thin films
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Preparation and electrical properties of MOCVD-deposited PZT thin films

SAKASHITA, Y ; ONO, T ; SEGAWA, H ; TOMINAGA, K ; OKADA, M

Journal of applied physics, 1991-06, Vol.69 (12), p.8352-8356 [Periódico revisado por pares]

Woodbury, NY: American Institute of Physics

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6
Well-width dependence of radiative and nonradiative recombination times in ZnO/Mg0.12Zn0.88O multiple quantum wells
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Well-width dependence of radiative and nonradiative recombination times in ZnO/Mg0.12Zn0.88O multiple quantum wells

Chia, C. H. ; Makino, T. ; Segawa, Y. ; Kawasaki, M. ; Ohtomo, A. ; Tamura, K. ; Koinuma, H.

Journal of applied physics, 2001-10, Vol.90 (7), p.3650-3652 [Periódico revisado por pares]

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7
Bonding and electrical properties of boron-doped microcrystalline SiN sub x :H films
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Bonding and electrical properties of boron-doped microcrystalline SiN sub x :H films

Hasegawa, S ; Segawa, M ; Kurata, Y

Journal of applied physics, 1988-01, Vol.64 (4), p.1931-1938 [Periódico revisado por pares]

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8
Strain effects in ZnO layers deposited on 6 H - Si C
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Strain effects in ZnO layers deposited on 6 H - Si C

Ashrafi, A B. M. A ; Segawa, Y ; Shin, K ; Yao, T

Journal of applied physics, 2006-09, Vol.100 (6), p.063523-063523-5 [Periódico revisado por pares]

American Institute of Physics

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9
Bonding and electrical properties of boron-doped microcrystalline SiNx:H films
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Bonding and electrical properties of boron-doped microcrystalline SiNx:H films

HASEGAWA, S ; SEGAWA, M ; KURATA, Y

Journal of applied physics, 1988-08, Vol.64 (4), p.1931-1938 [Periódico revisado por pares]

Woodbury, NY: American Institute of Physics

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10
Bonding and electrical properties of boron-doped microcrystalline SiN x :H films
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Bonding and electrical properties of boron-doped microcrystalline SiN x :H films

Hasegawa, S. ; Segawa, M. ; Kurata, Y.

Journal of applied physics, 1988-08, Vol.64 (4), p.1931-1938 [Periódico revisado por pares]

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