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1
Diamond-Like Carbon for the Fast Timing MPGD
Diamond-Like Carbon for the Fast Timing MPGD
Material Type:
Ata de Congresso 		Adicionar ao Meu Espaço

Diamond-Like Carbon for the Fast Timing MPGD

Colaleo, A ; De Robertis, G ; Licciulli, F ; Maggi, M ; Ranieri, A ; Simone, F ; Valentini, A ; Venditti, R ; Verwilligen, P ; Cesaria, M ; Calcagnile, L ; Caricato, A.P ; Di Giulio, M ; Lorusso, A ; Manno, D ; Martino, M ; Perrone, A ; Quarta, G ; Serra, A ; Ressegotti, M ; Riccardi, C ; Salvini, P ; Vitulo, P ; Vai, I ; Roskas, Christos ; Tytgat, Michael

2020

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2
Improvement of gm/ID Method for Detection of Self-Heating Effects
Improvement of gm/ID Method for Detection of Self-Heating Effects
Material Type:
Ata de Congresso 		Adicionar ao Meu Espaço

Improvement of gm/ID Method for Detection of Self-Heating Effects

Mori, Carlos Augusto Bergfeld ; Agopian, Paula Ghedini Der ; Martino, Joao Antonio

ECS transactions, 2018, Vol.85 (8), p.73-78

The Electrochemical Society, Inc

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3
Impact of Dynamic Body Floating effect on Low-Energy Operation of XCT-SOI CMOS Devices with Aim of Sub-20-nm Regime
Impact of Dynamic Body Floating effect on Low-Energy Operation of XCT-SOI CMOS Devices with Aim of Sub-20-nm Regime
Material Type:
Ata de Congresso 		Adicionar ao Meu Espaço

Impact of Dynamic Body Floating effect on Low-Energy Operation of XCT-SOI CMOS Devices with Aim of Sub-20-nm Regime

Ino, Daishi ; Omura, Yasuhisa ; Sato, Daiki

ECS transactions, 2013, Vol.53 (5), p.75-84

The Electrochemical Society, Inc

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4
Atomic Scale Thickness Control of SOI Wafers for Fully Depleted Applications
Atomic Scale Thickness Control of SOI Wafers for Fully Depleted Applications
Material Type:
Ata de Congresso 		Adicionar ao Meu Espaço

Atomic Scale Thickness Control of SOI Wafers for Fully Depleted Applications

Schwarzenbach, Walter ; Daval, Nicolas ; Barec, Vincent ; Bonnin, Olivier ; Acosta-Alba, Pablo-Eduardo ; Maddalon, Catherine ; Chibko, Alexandre ; Robson, Timothy ; Nguyen, Bich-Yen ; Maleville, Christophe

ECS transactions, 2013, Vol.53 (5), p.39-46

The Electrochemical Society, Inc

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5
Turning an SOI Into MEMS Devices for Optics and RF
Turning an SOI Into MEMS Devices for Optics and RF
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Turning an SOI Into MEMS Devices for Optics and RF

Toshiyoshi, Hiroshi

ECS transactions, 2013, Vol.53 (5), p.17-28

The Electrochemical Society, Inc

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6
Influence of 45° Substrate Rotation on the Analog Performance of Biaxially Strained Silicon SOI MuGFETs
Influence of 45° Substrate Rotation on the Analog Performance of Biaxially Strained Silicon SOI MuGFETs
Material Type:
Ata de Congresso 		Adicionar ao Meu Espaço

Influence of 45° Substrate Rotation on the Analog Performance of Biaxially Strained Silicon SOI MuGFETs

de Souza, M. A. S. ; Doria, R. T. ; Martino, J. A. ; Simoen, E. ; Claeys, C. ; Pavanello, M. A.

ECS transactions, 2013, Vol.53 (5), p.161-167

The Electrochemical Society, Inc

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7
Influence of High Temperature on UTBB SOI nMOSFETs with and without Ground Plane
Influence of High Temperature on UTBB SOI nMOSFETs with and without Ground Plane
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Influence of High Temperature on UTBB SOI nMOSFETs with and without Ground Plane

Sonnenberg, Victor ; Itocazu, Vitor T. ; Martino, João Antonio ; Simoen, Eddy R. ; Claeys, Cor

ECS transactions, 2013, Vol.53 (5), p.85-91

The Electrochemical Society, Inc

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8
Fin Dimension Influence on Mechanical Stressors in Triple-Gate SOI nMOSFETs
Fin Dimension Influence on Mechanical Stressors in Triple-Gate SOI nMOSFETs
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Fin Dimension Influence on Mechanical Stressors in Triple-Gate SOI nMOSFETs

Bühler, Rudolf Theoderich ; Simoen, E. ; Agopian, Paula Ghedini Der ; Claeys, C. ; Martino, J. A.

ECS transactions, 2013, Vol.53 (5), p.187-192

The Electrochemical Society, Inc

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9
Comparative Experimental Study between Tensile and Compressive Uniaxially Stressed nMuGFETs under X-ray Radiation Focusing on Analog Behavior
Comparative Experimental Study between Tensile and Compressive Uniaxially Stressed nMuGFETs under X-ray Radiation Focusing on Analog Behavior
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Comparative Experimental Study between Tensile and Compressive Uniaxially Stressed nMuGFETs under X-ray Radiation Focusing on Analog Behavior

Peruzzi, V. V. ; Gimenez, S. P. ; Agopian, Paula Ghedini Der ; Silveira, Marcilei A.G. ; Martino, Joao Antonio ; Simoen, Eddy ; Claeys, C.

ECS transactions, 2013, Vol.53 (5), p.177-185

The Electrochemical Society, Inc

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10
Sharp Switching SOI Devices
Sharp Switching SOI Devices
Material Type:
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Sharp Switching SOI Devices

Cristoloveanu, Sorin ; Wan, Jing ; Le Royer, Cyrille ; Zaslavsky, Alexander

ECS transactions, 2013, Vol.53 (5), p.3-13

The Electrochemical Society, Inc

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