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Stoichiometry and absolute atomic concentration profiles obtained by combined Rutherford backscattering spectroscopy and secondary-ion mass spectroscopy: InAs nanocrystals in Si
Stoichiometry and absolute atomic concentration profiles obtained by combined Rutherford backscattering spectroscopy and secondary-ion mass spectroscopy: InAs nanocrystals in Si
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Stoichiometry and absolute atomic concentration profiles obtained by combined Rutherford backscattering spectroscopy and secondary-ion mass spectroscopy: InAs nanocrystals in Si

Karl, H ; Grosshans, I ; Wenzel, A ; Stritzker, B ; Claessen, R ; Strocov, V N ; Cirlin, G E ; Egorov, V A ; Polyakov, N K ; Samsonenko, Yu B ; Denisov, D V ; Ustinov, V M ; Alferov, Zh I

Nanotechnology, 2002-10, Vol.13 (5), p.631-634 [Periódico revisado por pares]

Bristol: IOP Publishing

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