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Time-Domain Precoding for LTE-over-Copper Systems
Time-Domain Precoding for LTE-over-Copper Systems
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Ata de Congresso 		Adicionar ao Meu Espaço

Time-Domain Precoding for LTE-over-Copper Systems

Huang, Yezi ; Medeiros, Eduardo ; Magesacher, Thomas ; Höst, Stefan ; Lu, Chenguang ; Eriksson, Per-Erik ; Ödling, Per ; Börjesson, Per Ola

IEEE International Conference on Communications, 2016,Kuala Lumpur, Malaysia,2016-05-23 - 2016-05-27, 2016, p.1

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2
Monolithic very high frequency GaN switched-mode power converters
Monolithic very high frequency GaN switched-mode power converters
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Monolithic very high frequency GaN switched-mode power converters

Maksimovic, Dragan ; Yuanzhe Zhang ; Rodriguez, Miguel

2015 IEEE Custom Integrated Circuits Conference (CICC), 2015, p.1-4

IEEE

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3
Line end voids defectivity improvement on 64 pitch Cu wire interconnects of 14 nm technology
Line end voids defectivity improvement on 64 pitch Cu wire interconnects of 14 nm technology
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Line end voids defectivity improvement on 64 pitch Cu wire interconnects of 14 nm technology

Daino, Michael ; Jensen, Graham ; Jain, Ankit ; Kini, Sumanth ; Bawari, Atul ; Rajagopalan, Balajee ; Aizawa, Hirokazu ; Jae Choo ; Srivastava, Amit ; Tolle, Ian ; Huang, Ronald ; Shiran Xiao ; Hoang Nguyen

2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC), 2016, p.60-64 [Periódico revisado por pares]

IEEE

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4
Introduction to Health Behavior Change Support Systems (HBCSS) Minitrack
Introduction to Health Behavior Change Support Systems (HBCSS) Minitrack
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Introduction to Health Behavior Change Support Systems (HBCSS) Minitrack

Oinas-Kukkonen, Harri ; Win, Khin Than ; Chatterjee, Samir

2016 49th Hawaii International Conference on System Sciences (HICSS), 2016, p.3073-3073

IEEE

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5
What is the Benefit of Including Uncertainty in Transmission Planning? A WECC Case Study
What is the Benefit of Including Uncertainty in Transmission Planning? A WECC Case Study
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What is the Benefit of Including Uncertainty in Transmission Planning? A WECC Case Study

Hobbs, Benjamin F. ; Kasina, Saamrat ; Qingyu Xu ; Sang Woo Park ; Ouyang, Jasmine ; Ho, Jonathan L. ; Donohoo-Vallett, Pearl E.

2016 49th Hawaii International Conference on System Sciences (HICSS), 2016, p.2364-2371

IEEE

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6
High temperature sensors based on silicon carbide (SiC) devices
High temperature sensors based on silicon carbide (SiC) devices
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High temperature sensors based on silicon carbide (SiC) devices

Brezeanu, Gheorghe ; Badila, Marian ; Draghici, Florin ; Pascu, Razvan ; Pristavu, Gheorghe ; Craciunoiu, Florea ; Rusu, Ion

2015 International Semiconductor Conference (CAS), 2015, p.3-10

IEEE

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7
Electronics design, assembly and reliability for high temperature applications
Electronics design, assembly and reliability for high temperature applications
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Electronics design, assembly and reliability for high temperature applications

Riches, S. ; Johnston, C.

2015 IEEE International Symposium on Circuits and Systems (ISCAS), 2015, p.1158-1161

IEEE

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8
A 12A 50V half-bridge gate driver for enhancement-mode GaN HEMTs with digital dead-time correction
A 12A 50V half-bridge gate driver for enhancement-mode GaN HEMTs with digital dead-time correction
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A 12A 50V half-bridge gate driver for enhancement-mode GaN HEMTs with digital dead-time correction

Ziang Chen ; Yat-To Wong ; Tak-Sang Yim ; Wing-Hung Ki

2015 IEEE International Symposium on Circuits and Systems (ISCAS), 2015, p.1750-1753

IEEE

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9
450mm PVD MHM TiN process development and process chamber evaluation using DC power system
450mm PVD MHM TiN process development and process chamber evaluation using DC power system
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450mm PVD MHM TiN process development and process chamber evaluation using DC power system

Wang, Barry ; Chen, M. H. ; Xie, J. H. ; Chang, Stock

2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC), 2016, p.116-118 [Periódico revisado por pares]

IEEE

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10
Extra-pattern killer defectivity improvement and enhancement of within-feature barrier coverage by optimization of TaN barrier PVD process in 90p Cu wire interconnects for 28nm technology
Extra-pattern killer defectivity improvement and enhancement of within-feature barrier coverage by optimization of TaN barrier PVD process in 90p Cu wire interconnects for 28nm technology
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Extra-pattern killer defectivity improvement and enhancement of within-feature barrier coverage by optimization of TaN barrier PVD process in 90p Cu wire interconnects for 28nm technology

Rajagopalan, Balajee ; Laloe, Jean-Baptiste ; Silvestre, Mary Claire ; Ramanathan, Eswar ; Khanal, Sohana ; Laval, Alain ; Ge, Qian ; Takahashi, Nobuyuki ; Mahalingam, Anbu Selvam ; Liew, San Leong ; Teagle, Robert

2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC), 2016, p.354-357 [Periódico revisado por pares]

IEEE

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