Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Trap creation in silicon dioxide produced by hot electronsDI MARIA, D. J ; STASIAK, J. WJournal of applied physics, 1989-03, Vol.65 (6), p.2342-2356 [Periódico revisado por pares]Woodbury, NY: American Institute of PhysicsTexto completo disponível |
2 |
Material Type: Artigo
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Thin films of Y-Ba-Cu-O on silicon and silicon dioxideMOGRO-CAMPERO, A ; TURNER, L. GApplied physics letters, 1988-04, Vol.52 (14), p.1185-1186 [Periódico revisado por pares]Melville, NY: American Institute of PhysicsTexto completo disponível |
3 |
Material Type: Artigo
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Deposition of silicon dioxide and silicon nitride by remote plasma enhanced chemical vapor depositionLucovsky, G. ; Richard, P. D. ; Tsu, D. V. ; Lin, S. Y. ; Markunas, R. J.Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1986-05, Vol.4 (3), p.681-688 [Periódico revisado por pares]Texto completo disponível |
4 |
Material Type: Artigo
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Silicon-silicon dioxide interface: an infrared studyBOYD, I. W ; WILSON, J. I. BJournal of applied physics, 1987-10, Vol.62 (8), p.3195-3200 [Periódico revisado por pares]Woodbury, NY: American Institute of PhysicsTexto completo disponível |
5 |
Material Type: Artigo
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Self-consistent calculation of electron and hole inversion charges at silicon-silicon dioxide interfacesMOGLESTUE, CJournal of applied physics, 1986-05, Vol.59 (9), p.3175-3183 [Periódico revisado por pares]Woodbury, NY: American Institute of PhysicsTexto completo disponível |
6 |
Material Type: Artigo
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A model for phosphorus segregation at the silicon-silicon dioxide interfaceLau, F. ; Mader, L. ; Mazure, C. ; Werner, Ch ; Orlowski, M.Applied Physics A Solids and Surfaces, 1989-12, Vol.49 (6), p.671-675 [Periódico revisado por pares]Texto completo disponível |
7 |
Material Type: Artigo
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Low-temperature deposition of high-quality silicon dioxide by plasma-enhanced chemical vapor depositionBATEY, J ; TIERNEY, EJournal of applied physics, 1986-11, Vol.60 (9), p.3136-3145 [Periódico revisado por pares]Woodbury, NY: American Institute of PhysicsTexto completo disponível |
8 |
Material Type: Artigo
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A reassessment of electron escape depths in silicon and thermally grown silicon dioxide thin filmsHochella, M.F. ; Carim, A.H.Surface science, 1988, Vol.197 (3), p.L260-L268 [Periódico revisado por pares]Lausanne: Elsevier B.VTexto completo disponível |
9 |
Material Type: Artigo
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Infrared spectroscopy of thin silicon dioxide on siliconOLSEN, J. E ; SHIMURA, FApplied physics letters, 1988-11, Vol.53 (20), p.1934-1936 [Periódico revisado por pares]Melville, NY: American Institute of PhysicsTexto completo disponível |
10 |
Material Type: Artigo
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Light-induced degradation at the silicon/silicon dioxide interfaceGRUENBAUM, P. E ; SINTON, R. A ; SWANSON, R. MApplied physics letters, 1988-04, Vol.52 (17), p.1407-1409 [Periódico revisado por pares]Melville, NY: American Institute of PhysicsTexto completo disponível |