skip to main content
Idioma:
Resultados 1 2 3 4 next page
Refinado por: Nome da Publicação: Applied Physics Letters remover
Result Number Material Type Add to My Shelf Action Record Details and Options
1
Surface acoustic wave regulated single photon emission from a coupled quantum dot–nanocavity system
Surface acoustic wave regulated single photon emission from a coupled quantum dot–nanocavity system
Material Type:
Artigo 		Adicionar ao Meu Espaço

Surface acoustic wave regulated single photon emission from a coupled quantum dot–nanocavity system

Weiß, M. ; Kapfinger, S. ; Reichert, T. ; Finley, J. J. ; Wixforth, A. ; Kaniber, M. ; Krenner, H. J.

Applied physics letters, 2016-07, Vol.109 (3) [Periódico revisado por pares]

Melville: American Institute of Physics

Texto completo disponível

Citações Citado por
2
Low-threshold single ternary GaAsSb nanowire lasers emitting at silicon transparent wavelengths
Low-threshold single ternary GaAsSb nanowire lasers emitting at silicon transparent wavelengths
Material Type:
Artigo 		Adicionar ao Meu Espaço

Low-threshold single ternary GaAsSb nanowire lasers emitting at silicon transparent wavelengths

Schmiedeke, P. ; Doganlar, C. ; Jeong, H. W. ; Döblinger, M. ; Finley, J. J. ; Koblmüller, G.

Applied physics letters, 2024-02, Vol.124 (7) [Periódico revisado por pares]

Melville: American Institute of Physics

Texto completo disponível

Citações Citado por
3
Enhanced growth and properties of non-catalytic GaAs nanowires via Sb surfactant effects
Enhanced growth and properties of non-catalytic GaAs nanowires via Sb surfactant effects
Material Type:
Artigo 		Adicionar ao Meu Espaço

Enhanced growth and properties of non-catalytic GaAs nanowires via Sb surfactant effects

Ajay, A. ; Jeong, H. ; Schreitmüller, T. ; Döblinger, M. ; Ruhstorfer, D. ; Mukhundhan, N. ; Koolen, P. A. L. M. ; Finley, J. J. ; Koblmüller, G.

Applied physics letters, 2022-08, Vol.121 (7) [Periódico revisado por pares]

Melville: American Institute of Physics

Texto completo disponível

Citações Citado por
4
Coaxial GaAs-AlGaAs core-multishell nanowire lasers with epitaxial gain control
Coaxial GaAs-AlGaAs core-multishell nanowire lasers with epitaxial gain control
Material Type:
Artigo 		Adicionar ao Meu Espaço

Coaxial GaAs-AlGaAs core-multishell nanowire lasers with epitaxial gain control

Stettner, T. ; Zimmermann, P. ; Loitsch, B. ; Döblinger, M. ; Regler, A. ; Mayer, B. ; Winnerl, J. ; Matich, S. ; Riedl, H. ; Kaniber, M. ; Abstreiter, G. ; Koblmüller, G. ; Finley, J. J.

Applied physics letters, 2016-01, Vol.108 (1) [Periódico revisado por pares]

Melville: American Institute of Physics

Texto completo disponível

Citações Citado por
5
Low-threshold strain-compensated InGaAs/(In,Al)GaAs multi-quantum well nanowire lasers emitting near 1.3 μm at room temperature
Low-threshold strain-compensated InGaAs/(In,Al)GaAs multi-quantum well nanowire lasers emitting near 1.3 μm at room temperature
Material Type:
Artigo 		Adicionar ao Meu Espaço

Low-threshold strain-compensated InGaAs/(In,Al)GaAs multi-quantum well nanowire lasers emitting near 1.3 μm at room temperature

Schmiedeke, P. ; Thurn, A. ; Matich, S. ; Döblinger, M. ; Finley, J. J. ; Koblmüller, G.

Applied physics letters, 2021-05, Vol.118 (22) [Periódico revisado por pares]

Texto completo disponível

Citações Citado por
6
Widely tunable alloy composition and crystal structure in catalyst-free InGaAs nanowire arrays grown by selective area molecular beam epitaxy
Widely tunable alloy composition and crystal structure in catalyst-free InGaAs nanowire arrays grown by selective area molecular beam epitaxy
Material Type:
Artigo 		Adicionar ao Meu Espaço

Widely tunable alloy composition and crystal structure in catalyst-free InGaAs nanowire arrays grown by selective area molecular beam epitaxy

Treu, J. ; Speckbacher, M. ; Saller, K. ; Morkötter, S. ; Döblinger, M. ; Xu, X. ; Riedl, H. ; Abstreiter, G. ; Finley, J. J. ; Koblmüller, G.

Applied physics letters, 2016-02, Vol.108 (5) [Periódico revisado por pares]

Melville: American Institute of Physics

Texto completo disponível

Citações Citado por
7
Atomistic defects as single-photon emitters in atomically thin MoS2
Atomistic defects as single-photon emitters in atomically thin MoS2
Material Type:
Artigo 		Adicionar ao Meu Espaço

Atomistic defects as single-photon emitters in atomically thin MoS2

Barthelmi, K. ; Klein, J. ; Hötger, A. ; Sigl, L. ; Sigger, F. ; Mitterreiter, E. ; Rey, S. ; Gyger, S. ; Lorke, M. ; Florian, M. ; Jahnke, F. ; Taniguchi, T. ; Watanabe, K. ; Zwiller, V. ; Jöns, K. D. ; Wurstbauer, U. ; Kastl, C. ; Weber-Bargioni, A. ; Finley, J. J. ; Müller, K. ; Holleitner, A. W.

Applied physics letters, 2020-08, Vol.117 (7) [Periódico revisado por pares]

Melville: American Institute of Physics

Texto completo disponível

Citações Citado por
8
Absence of vapor-liquid-solid growth during molecular beam epitaxy of self-induced InAs nanowires on Si
Absence of vapor-liquid-solid growth during molecular beam epitaxy of self-induced InAs nanowires on Si
Material Type:
Artigo 		Adicionar ao Meu Espaço

Absence of vapor-liquid-solid growth during molecular beam epitaxy of self-induced InAs nanowires on Si

Hertenberger, S. ; Rudolph, D. ; Bolte, S. ; Döblinger, M. ; Bichler, M. ; Spirkoska, D. ; Finley, J. J. ; Abstreiter, G. ; Koblmüller, G.

Applied physics letters, 2011-03, Vol.98 (12) [Periódico revisado por pares]

United States

Texto completo disponível

Citações Citado por
9
Impact of substrate induced band tail states on the electronic and optical properties of MoS2
Impact of substrate induced band tail states on the electronic and optical properties of MoS2
Material Type:
Artigo 		Adicionar ao Meu Espaço

Impact of substrate induced band tail states on the electronic and optical properties of MoS2

Klein, J. ; Kerelsky, A. ; Lorke, M. ; Florian, M. ; Sigger, F. ; Kiemle, J. ; Reuter, M. C. ; Taniguchi, T. ; Watanabe, K. ; Finley, J. J. ; Pasupathy, A. N. ; Holleitner, A. W. ; Ross, F. M. ; Wurstbauer, U.

Applied physics letters, 2019-12, Vol.115 (26) [Periódico revisado por pares]

Melville: American Institute of Physics

Texto completo disponível

Citações Citado por
10
Low-threshold strain-compensated InGaAs/(In,Al)GaAs multi-quantum wellnanowire lasers emitting near 1.3 μm at room temperature
Low-threshold strain-compensated InGaAs/(In,Al)GaAs multi-quantum wellnanowire lasers emitting near 1.3 μm at room temperature
Material Type:
Artigo 		Adicionar ao Meu Espaço

Low-threshold strain-compensated InGaAs/(In,Al)GaAs multi-quantum wellnanowire lasers emitting near 1.3 μm at room temperature

Schmiedeke, P ; Thurn, A ; Matich, S ; Döblinger, M ; Finley, J J ; Koblmüller, G

Applied physics letters, 2021-05, Vol.118 (22) [Periódico revisado por pares]

Melville: American Institute of Physics

Texto completo disponível

Citações Citado por
Resultados 1 2 3 4 next page

Personalize Seus Resultados

  1. Editar

Refine Search Results

Expandir Meus Resultados

  1.   

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

Buscando em bases de dados remotas. Favor aguardar.