Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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(0 0 1) Textured CoPt/Ag films and nanocomposites: the effect of Ag underlayersManios, E. ; Karanasos, V. ; Niarchos, D. ; Panagiotopoulos, I.Journal of magnetism and magnetic materials, 2004-05, Vol.272, p.2169-2170 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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Material Type: Artigo
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0.1-10 MeV Neutron Soft Error Rate in Accelerator and Atmospheric EnvironmentsCecchetto, Matteo ; Alia, Ruben Garcia ; Wrobel, Frederic ; Coronetti, Andrea ; Bilko, Kacper ; Lucsanyi, David ; Fiore, Salvatore ; Bazzano, Giulia ; Pirovano, Elisa ; Nolte, RalfIEEE transactions on nuclear science, 2021-05, Vol.68 (5), p.873-883 [Periódico revisado por pares]New York: IEEETexto completo disponível |
3 |
Material Type: Artigo
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0.1-2000 eV electron impact cross sections for dichlorine monoxideGoswami, Biplab ; Gupta, Dhanoj ; Antony, BobbyJournal of electron spectroscopy and related phenomena, 2014-03, Vol.193, p.86-91 [Periódico revisado por pares]Texto completo disponível |
4 |
Material Type: Artigo
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0.12-μm gate III-V nitride HFET's with high contact resistancesBurm, J. ; Chu, K. ; Schaff, W.J. ; Eastman, L.F. ; Khan, M.A. ; Qisheng Chen ; Yang, J.W. ; Shur, M.S.IEEE electron device letters, 1997-04, Vol.18 (4), p.141-143 [Periódico revisado por pares]IEEETexto completo disponível |
5 |
Material Type: Artigo
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0.18-μm CMOS push-pull power amplifier with antenna in IC packageWei Wang ; Zhang, Y.P.IEEE microwave and wireless components letters, 2004-01, Vol.14 (1), p.13-15New York, NY: IEEETexto completo disponível |
6 |
Material Type: Ata de Congresso
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0.1wt% Boron addition Effect on dynamic compressive mechanical properties of Ti-6Al-4V alloyYu, Yang ; Hui, Songxiao ; Mi, Xujun ; Ye, Wenjun ; Gao, Qi Jawaid, M. ; Kenawy, El-R.MATEC Web of Conferences, 2016, Vol.67, p.5018 [Periódico revisado por pares]Les Ulis: EDP SciencesTexto completo disponível |
7 |
Material Type: Artigo
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0.2-μm gate-length InGaP-InGaAs DCFETs for c-band MMIC amplifier applicationsChiu, Hsien-Chin ; Yang, Shih-Cheng ; Lin, Cheng-Kuo ; Hwu, Ming-Jyh ; Chan, Yi-JenIEEE transactions on electron devices, 2003-07, Vol.50 (7), p.1599-1603 [Periódico revisado por pares]Texto completo disponível |
8 |
Material Type: Artigo
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0.23 mm thick high permeability grain oriented Si-steelNakashima, S. ; Takashima, K. ; Kuroki, K. ; Harada, M.IEEE transactions on magnetics, 1982-11, Vol.18 (6), p.1511-1513IEEETexto completo disponível |
9 |
Material Type: Artigo
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0.25 μm emitter InP/InAlGaAs/GaAsSb double heterojunction bipolar transistor with passivation ledge exhibiting a current gain of over 100Kashio, N ; Kurishima, K ; Ida, M ; Matsuzaki, HElectronics letters, 2014-10, Vol.50 (22), p.1631-1633 [Periódico revisado por pares]The Institution of Engineering and TechnologyTexto completo disponível |
10 |
Material Type: Artigo
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A 0-1 goal programming model for nurse schedulingAzaiez, M.N. ; Al Sharif, S.S.Computers & operations research, 2005-03, Vol.32 (3), p.491-507 [Periódico revisado por pares]Oxford: Elsevier LtdTexto completo disponível |