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Refinado por: Nome da Publicação: Microelectronic Engineering remover Aerospace Database remover
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Defect-deformational self-organization and nanostructuring of solid surfaces
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Artigo
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Defect-deformational self-organization and nanostructuring of solid surfaces

Emel’yanov, V.I

Microelectronic engineering, 2003-09, Vol.69 (2), p.435-445 [Periódico revisado por pares]

Elsevier B.V

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2
Nanometer scale linewidth control during etching of polysilicon gates in high-density plasmas
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Nanometer scale linewidth control during etching of polysilicon gates in high-density plasmas

Joubert, O ; Pargon, E ; Foucher, J ; Detter, X ; Cunge, G ; Vallier, L

Microelectronic engineering, 2003-09, Vol.69 (2), p.350-357 [Periódico revisado por pares]

Elsevier B.V

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3
Wet etching studies of silicon nitride thin films deposited by electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition
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Wet etching studies of silicon nitride thin films deposited by electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition

Sundaram, K.B. ; Sah, R.E. ; Baumann, H. ; Balachandran, K. ; Todi, R.M.

Microelectronic engineering, 2003-10, Vol.70 (1), p.109-114 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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4
A concave-type structure of a Ru electrode capacitor fabricated by the reactive ion etching method
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A concave-type structure of a Ru electrode capacitor fabricated by the reactive ion etching method

Ju, Byong-Sun ; Kim, Hyoun Woo

Microelectronic engineering, 2003-10, Vol.70 (1), p.30-34 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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5
Wavelet analysis of directional variations of plasma etch profile
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Wavelet analysis of directional variations of plasma etch profile

Choi, Seok Rim ; Kim, Byungwhan ; Kim, Beom Soo ; Lee, Kyeong Kun

Microelectronic engineering, 2004, Vol.71 (1), p.1-6 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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6
Study on the etching damage characteristics of PZT thin films after etching in Cl-based plasma
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Study on the etching damage characteristics of PZT thin films after etching in Cl-based plasma

Kim, Kyoung-Tae ; Kang, Myoung-Gu ; Kim, Chang-Il

Microelectronic engineering, 2004-05, Vol.71 (3), p.294-300 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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7
Etching profile of silicon carbide in a NF3/CH4 inductively coupled plasma
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Etching profile of silicon carbide in a NF3/CH4 inductively coupled plasma

KIM, Byungwhan ; SUK YONG LEE ; LEE, Byung-Teak

Microelectronic engineering, 2004-05, Vol.71 (3-4), p.329-334 [Periódico revisado por pares]

Amsterdam: Elsevier Science

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8
Investigation of copper removal efficiency on reclaimed wafers with HF-based solutions
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Investigation of copper removal efficiency on reclaimed wafers with HF-based solutions

Abbadie, A. ; Favier, S. ; Giroud, C. ; Billon, T.

Microelectronic engineering, 2004-05, Vol.71 (3), p.310-320 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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9
Fabrication of silicon nanopillar arrays and application on direct methanol fuel cell
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Fabrication of silicon nanopillar arrays and application on direct methanol fuel cell

Tang, Yu-Hsiang ; Huang, Mao-Jung ; Shiao, Ming-Hua ; Yang, Chii-Rong

Microelectronic engineering, 2011-08, Vol.88 (8), p.2580-2583 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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10
Refractive index graded anti-reflection coating for solar cells based on low cost reclaimed silicon
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Refractive index graded anti-reflection coating for solar cells based on low cost reclaimed silicon

Liu, Yufei ; Guy, Owen James ; Patel, Jash ; Ashraf, Huma ; Knight, Nick

Microelectronic engineering, 2013-10, Vol.110, p.418-421 [Periódico revisado por pares]

Elsevier B.V

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