Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
---|---|---|---|
1 |
Material Type: Artigo
|
Improved shallow trench isolation for sub-halfmicron CMOSCabanal, J.P. ; Haond, M.ESSDERC '91: 21st European Solid State Device Research Conference, 1991, Vol.15 (1), p.651-654 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
|
2 |
Material Type: Artigo
|
A new sealed poly buffer LOCOS isolation schemeWils, N.A.H. ; Montree, A.H.ESSDERC '91: 21st European Solid State Device Research Conference, 1991, Vol.15 (1), p.643-646 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
|
3 |
Material Type: Artigo
|
High-performance VLSI photomask with a molybdenum silicide filmShigetomi, A. ; Matsuda, S. ; Watakabe, Y. ; Kato, T.Microelectronic engineering, 1991, Vol.14 (2), p.73-86 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
|
4 |
Material Type: Artigo
|
A new submicron MOSFET technology with Gate Overlap on Twin Oxide (GOTO) LDD structureChoi, Young-Suk ; Rhee, Tae-Pok ; Yoo, Kwang-Dong ; Won, TaeyoungESSDERC '91: 21st European Solid State Device Research Conference, 1991, Vol.15 (1), p.253-256 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
|
5 |
Material Type: Artigo
|
Dry development and trilevel resist etching in a DECR reactorDijkstra, J. ; van de Ven, G. ; Kalter, H.Microelectronic engineering, 1991, Vol.14 (3), p.259-268 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
|
6 |
Material Type: Artigo
|
A lateral bipolar transistor concept on SOI using a self-aligned base definition techniqueMagnusson, U. ; Edholm, B. ; Masszi, F.ESSDERC '91: 21st European Solid State Device Research Conference, 1991, Vol.15 (1), p.341-344 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
|
7 |
Material Type: Artigo
|
A new process for defect-free definition of active areas in deep trench isolated bipolar devicesFallico, G ; Rapisarda, C ; Ward, PJ ; Zambrano, RESSDERC '91: 21st European Solid State Device Research Conference, 1991, Vol.15 (1), p.655-658 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
|
8 |
Material Type: Artigo
|
Silicon micromachining for sensor applicationsRudolf, F. ; Bergqvist, J.ESSDERC '91: 21st European Solid State Device Research Conference, 1991, Vol.15 (1), p.399-406 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
|
9 |
Material Type: Artigo
|
Design and characteristics of a GaAs BMFETSchweeger, G. ; Della Corte, F.G. ; Hartnagel, H.L.ESSDERC '91: 21st European Solid State Device Research Conference, 1991, Vol.15 (1), p.313-316 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
|
10 |
Material Type: Artigo
|
Study of vertical transport through Schottky-gated, laterally confined quantum-dot devicesBlanc, N. ; Guéret, P. ; Germann, R. ; Rothuizen, H.ESSDERC '91: 21st European Solid State Device Research Conference, 1991, Vol.15 (1), p.671-674 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |