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Detection and identification of explosives hidden under barrier materials - what are the THz-technology challenges?
Detection and identification of explosives hidden under barrier materials - what are the THz-technology challenges?
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Detection and identification of explosives hidden under barrier materials - what are the THz-technology challenges?

VAN RHEENEN, Arthur D ; HAAKESTAD, Magnus W

Proceedings of SPIE, the International Society for Optical Engineering, 2011, Vol.8017

Bellingham, Wash: SPIE

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Slow and fast light in optical fibers using acoustooptic coupling between two co-propagating modes
Slow and fast light in optical fibers using acoustooptic coupling between two co-propagating modes
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Slow and fast light in optical fibers using acoustooptic coupling between two co-propagating modes

Haakestad, Magnus W ; Skaar, Johannes

Proceedings of SPIE, the International Society for Optical Engineering, 2009, Vol.7226, p.72260F-72260F-8

Bellingham, Wash: SPIE

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Analytical model for point and line tunneling in a tunnel field-effect transistor
Analytical model for point and line tunneling in a tunnel field-effect transistor
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Analytical model for point and line tunneling in a tunnel field-effect transistor

Vandenberghe, W. ; Verhulst, A.S. ; Groeseneken, G. ; Soree, B. ; Magnus, W.

2008 International Conference on Simulation of Semiconductor Processes and Devices, 2008, p.137-140

IEEE

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Mid-infrared ZnGeP2-based source with 0.2 J pulse energy
Mid-infrared ZnGeP2-based source with 0.2 J pulse energy
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Mid-infrared ZnGeP2-based source with 0.2 J pulse energy

Haakestad, Magnus W. ; Fonnum, Helge ; Lippert, Espen

2014 Conference on Lasers and Electro-Optics (CLEO) - Laser Science to Photonic Applications, 2014, p.1-2

The Optical Society

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5
(Invited) Probing the Intrinsic Limitations of the Contact Resistance of Metal/Semiconductor Interfaces through Atomistic Simulations
(Invited) Probing the Intrinsic Limitations of the Contact Resistance of Metal/Semiconductor Interfaces through Atomistic Simulations
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(Invited) Probing the Intrinsic Limitations of the Contact Resistance of Metal/Semiconductor Interfaces through Atomistic Simulations

Pourtois, Geoffrey ; Dabral, Ashish ; Sankaran, Kiroubanand ; Magnus, Wim ; Yu, Hao ; de Jamblinne de Meux, Albert ; Lu, Anh Khoa Augustin ; Clima, Sergiu ; Stokbro, Kurt ; Schaekers, Marc ; Houssa, Michel ; Collaert, Nadine ; Horiguchi, Naoto

ECS transactions, 2017, Vol.80 (1), p.303-311

The Electrochemical Society, Inc

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Mobility degradation in high-k transistors: the role of the charge scattering
Mobility degradation in high-k transistors: the role of the charge scattering
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Mobility degradation in high-k transistors: the role of the charge scattering

Lujan, G.S. ; Kubicek, S. ; De Gendt, S. ; Heyns, M. ; Magnus, W. ; De Meyer, K.

ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003, 2003, p.399-402

IEEE

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7
A new method to calculate leakage current and its applications for sub-45nm MOSFETs
A new method to calculate leakage current and its applications for sub-45nm MOSFETs
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A new method to calculate leakage current and its applications for sub-45nm MOSFETs

Lujan, G.S. ; Magnus, W. ; Soree, B. ; Pourghaderi, M.A. ; Veloso, A. ; van Da, M.J.H. ; Lauwers, A. ; Kubicek, S. ; De Gendt, S. ; Heyns, M. ; De Meyer, K.

Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005, 2005, p.489-492

IEEE

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8
Novel Device Concepts for Nanotechnology: The Nanowire Pinch-Off FET and Graphene TunnelFET
Novel Device Concepts for Nanotechnology: The Nanowire Pinch-Off FET and Graphene TunnelFET
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Novel Device Concepts for Nanotechnology: The Nanowire Pinch-Off FET and Graphene TunnelFET

Sorée, Bart ; Magnus, Wim ; Szepieniec, Mark ; Vandenberghe, William ; Verhulst, Anne ; Pourtois, Geoffrey ; Groeseneken, Guido ; De Gendt, Stefan ; Heyns, Marc

ECS transactions, 2010, Vol.28 (5), p.15-26

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9
Quantum simulations of electrostatics in Si cylindrical nanowire pinch-off nFETs and pFETs with a homogeneous channel including strain and arbitrary crystallographic orientations
Quantum simulations of electrostatics in Si cylindrical nanowire pinch-off nFETs and pFETs with a homogeneous channel including strain and arbitrary crystallographic orientations
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Quantum simulations of electrostatics in Si cylindrical nanowire pinch-off nFETs and pFETs with a homogeneous channel including strain and arbitrary crystallographic orientations

Pham, A T ; Sorée, B ; Magnus, W ; Jungemann, C ; Meinerzhagen, B ; Pourtois, G

Ulis 2011 Ultimate Integration on Silicon, 2011, p.1-4

IEEE

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10
Field induced quantum confinement in Indirect Semiconductors: Quantum mechanical and modified semiclassical model
Field induced quantum confinement in Indirect Semiconductors: Quantum mechanical and modified semiclassical model
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Field induced quantum confinement in Indirect Semiconductors: Quantum mechanical and modified semiclassical model

Vandenberghe, W. G. ; Soree, B. ; Magnus, W. ; Groeseneken, G. ; Verhulst, A. S. ; Fischetti, M. V.

2011 International Conference on Simulation of Semiconductor Processes and Devices, 2011, p.271-274

IEEE

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