Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Spin rectification induced by spin Hall magnetoresistance at room temperatureWang, P. ; Jiang, S. W. ; Luan, Z. Z. ; Zhou, L. F. ; Ding, H. F. ; Zhou, Y. ; Tao, X. D. ; Wu, D.Applied physics letters, 2016-09, Vol.109 (11) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
2 |
Material Type: Artigo
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Ga-doped ZnO single-crystal nanotips grown on fused silica by metalorganic chemical vapor depositionZhong, J. ; Muthukumar, S. ; Chen, Y. ; Lu, Y. ; Ng, H. M. ; Jiang, W. ; Garfunkel, E. L.Applied physics letters, 2003-10, Vol.83 (16), p.3401-3403 [Periódico revisado por pares]Texto completo disponível |
3 |
Material Type: Artigo
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Enhancement of microwave emission in magnetic tunnel junction oscillators through in-plane field orientationZeng, Z. M. ; Upadhyaya, P. ; Khalili Amiri, P. ; Cheung, K. H. ; Katine, J. A. ; Langer, J. ; Wang, K. L. ; Jiang, H. W.Applied physics letters, 2011-07, Vol.99 (3), p.032503-032503-3 [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
4 |
Material Type: Artigo
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Switching current reduction using perpendicular anisotropy in CoFeB-MgO magnetic tunnel junctionsKhalili Amiri, P. ; Zeng, Z. M. ; Langer, J. ; Zhao, H. ; Rowlands, G. ; Chen, Y.-J. ; Krivorotov, I. N. ; Wang, J.-P. ; Jiang, H. W. ; Katine, J. A. ; Huai, Y. ; Galatsis, K. ; Wang, K. L.Applied physics letters, 2011-03, Vol.98 (11), p.112507-112507-3 [Periódico revisado por pares]American Institute of PhysicsTexto completo disponível |
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Material Type: Artigo
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Electronic structure of Ba (Zn0.875Mn0.125)2As2Zhu, Fengfeng ; Jiang, W. X. ; Li, P. ; Yang, Z. Q. ; Man, H. Y. ; Li, Y. Y. ; Liu, Canhua ; Guan, Dandan ; Jia, Jin-Feng ; Ning, F. L. ; Luo, Weidong ; Qian, DongApplied physics letters, 2017-08, Vol.111 (6) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
6 |
Material Type: Artigo
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Electrochemical corrosion behavior of a Zr-based bulk-metallic glassJiang, W. H. ; Jiang, F. ; Green, B. A. ; Liu, F. X. ; Liaw, P. K. ; Choo, H. ; Qiu, K. Q.Applied physics letters, 2007-07, Vol.91 (4), p.041904-041904-3 [Periódico revisado por pares]American Institute of PhysicsTexto completo disponível |
7 |
Material Type: Artigo
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Epitaxial growth of high mobility Bi2Se3 thin films on CdSKou, X. F. ; He, L. ; Xiu, F. X. ; Lang, M. R. ; Liao, Z. M. ; Wang, Y. ; Fedorov, A. V. ; Yu, X. X. ; Tang, J. S. ; Huang, G. ; Jiang, X. W. ; Zhu, J. F. ; Zou, J. ; Wang, K. L.Applied physics letters, 2011-06, Vol.98 (24) [Periódico revisado por pares]Texto completo disponível |
8 |
Material Type: Artigo
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Modified configuration of relativistic magnetron with diffraction output for efficiency improvementDaimon, M. ; Jiang, W.Applied physics letters, 2007-11, Vol.91 (19), p.191503-191503-3 [Periódico revisado por pares]American Institute of PhysicsTexto completo disponível |
9 |
Material Type: Artigo
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Effect of resistance-area product on spin-transfer switching in MgO-based magnetic tunnel junction memory cellsZeng, Z. M. ; Khalili Amiri, P. ; Rowlands, G. ; Zhao, H. ; Krivorotov, I. N. ; Wang, J.-P. ; Katine, J. A. ; Langer, J. ; Galatsis, K. ; Wang, K. L. ; Jiang, H. W.Applied physics letters, 2011-02, Vol.98 (7), p.072512-072512-3 [Periódico revisado por pares]American Institute of PhysicsTexto completo disponível |
10 |
Material Type: Artigo
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Electron beam induced current investigations of Pt/SrTiO3−x interface exposed to chemical and electrical stressesJiang, W. ; Evans, D. ; Bain, J. A. ; Skowronski, M. ; Salvador, P. A.Applied physics letters, 2010-03, Vol.96 (9) [Periódico revisado por pares]Texto completo disponível |