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Refinado por: Nome da Publicação: Japanese Journal Of Applied Physics remover assunto: Physics remover
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1
High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growth
High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growth
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High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growth

Kuramata, Akito ; Koshi, Kimiyoshi ; Watanabe, Shinya ; Yamaoka, Yu ; Masui, Takekazu ; Yamakoshi, Shigenobu

Japanese Journal of Applied Physics, 2016-12, Vol.55 (12) [Periódico revisado por pares]

The Japan Society of Applied Physics

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2
Germanium CMOS potential from material and process perspectives: Be more positive about germanium
Germanium CMOS potential from material and process perspectives: Be more positive about germanium
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Germanium CMOS potential from material and process perspectives: Be more positive about germanium

Toriumi, Akira ; Nishimura, Tomonori

Japanese Journal of Applied Physics, 2018-01, Vol.57 (1), p.10101 [Periódico revisado por pares]

The Japan Society of Applied Physics

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3
Review on ferroelectric/polar metals
Review on ferroelectric/polar metals
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Review on ferroelectric/polar metals

Zhou, W. X. ; Ariando, A.

Japanese Journal of Applied Physics, 2020-06, Vol.59 (SI), p.SI0802 [Periódico revisado por pares]

IOP Publishing

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4
Structural evaluation of defects in β-Ga2O3 single crystals grown by edge-defined film-fed growth process
Structural evaluation of defects in β-Ga2O3 single crystals grown by edge-defined film-fed growth process
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Structural evaluation of defects in β-Ga2O3 single crystals grown by edge-defined film-fed growth process

Ueda, Osamu ; Ikenaga, Noriaki ; Koshi, Kimiyoshi ; Iizuka, Kazuyuki ; Kuramata, Akito ; Hanada, Kenji ; Moribayashi, Tomoya ; Yamakoshi, Shigenobu ; Kasu, Makoto

Japanese Journal of Applied Physics, 2016-12, Vol.55 (12) [Periódico revisado por pares]

The Japan Society of Applied Physics

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5
Physical reservoir computing-an introductory perspective
Physical reservoir computing-an introductory perspective
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Physical reservoir computing-an introductory perspective

Nakajima, Kohei

Japanese Journal of Applied Physics, 2020-06, Vol.59 (6), p.60501 [Periódico revisado por pares]

IOP Publishing

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6
A power device material of corundum-structured α-Ga2O3 fabricated by MIST EPITAXY® technique
A power device material of corundum-structured α-Ga2O3 fabricated by MIST EPITAXY® technique
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A power device material of corundum-structured α-Ga2O3 fabricated by MIST EPITAXY® technique

Kaneko, Kentaro ; Fujita, Shizuo ; Hitora, Toshimi

Japanese Journal of Applied Physics, 2018-02, Vol.57 (2S2) [Periódico revisado por pares]

The Japan Society of Applied Physics

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7
Conductivity control of Sn-doped α-Ga2O3 thin films grown on sapphire substrates
Conductivity control of Sn-doped α-Ga2O3 thin films grown on sapphire substrates
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Conductivity control of Sn-doped α-Ga2O3 thin films grown on sapphire substrates

Akaiwa, Kazuaki ; Kaneko, Kentaro ; Ichino, Kunio ; Fujita, Shizuo

Japanese Journal of Applied Physics, 2016-12, Vol.55 (12) [Periódico revisado por pares]

The Japan Society of Applied Physics

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8
Demonstration of zero bias responsivity in MBE grown β-Ga2O3 lateral deep-UV photodetector
Demonstration of zero bias responsivity in MBE grown β-Ga2O3 lateral deep-UV photodetector
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Demonstration of zero bias responsivity in MBE grown β-Ga2O3 lateral deep-UV photodetector

Pratiyush, Anamika Singh ; Krishnamoorthy, Sriram ; Kumar, Sandeep ; Xia, Zhanbo ; Muralidharan, Rangarajan ; Rajan, Siddharth ; Nath, Digbijoy N.

Japanese Journal of Applied Physics, 2018-06, Vol.57 (6) [Periódico revisado por pares]

The Japan Society of Applied Physics

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9
Dielectric and piezoelectric properties of Pb[(Mg 1/3 Nb 2/3 ) 0.52 (Yb 1/2 Nb 1/2 ) 0.15 Ti 0.33 ]O 3 single-crystal rectangular plate and beam mode transducers poled by alternate current poling
Dielectric and piezoelectric properties of Pb[(Mg 1/3 Nb 2/3 ) 0.52 (Yb 1/2 Nb 1/2 ) 0.15 Ti 0.33 ]O 3 single-crystal rectangular plate and beam mode transducers poled by alternate current poling
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Dielectric and piezoelectric properties of Pb[(Mg 1/3 Nb 2/3 ) 0.52 (Yb 1/2 Nb 1/2 ) 0.15 Ti 0.33 ]O 3 single-crystal rectangular plate and beam mode transducers poled by alternate current poling

He, Chao ; Karaki, Tomoaki ; Yang, Xiaoming ; Yamashita, Yohachi (John) ; Sun, Yiqin ; Long, Xifa

Japanese Journal of Applied Physics, 2019-11, Vol.58 (SL), p.SLLD06 [Periódico revisado por pares]

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10
Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer
Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer
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Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer

Wong, Man Hoi ; Sasaki, Kohei ; Kuramata, Akito ; Yamakoshi, Shigenobu ; Higashiwaki, Masataka

Japanese Journal of Applied Physics, 2016-12, Vol.55 (12) [Periódico revisado por pares]

The Japan Society of Applied Physics

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