Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Effect of Self-Assembled Monolayers on Charge Injection and Transport in Poly(3-hexylthiophene)-Based Field-Effect Transistors at Different Channel Length ScalesSingh, K. A ; Nelson, T. L ; Belot, J. A ; Young, T. M ; Dhumal, N. R ; Kowalewski, T ; McCullough, R. D ; Nachimuthu, P ; Thevuthasan, S ; Porter, L. MACS applied materials & interfaces, 2011-08, Vol.3 (8), p.2973-2978 [Periódico revisado por pares]United States: American Chemical SocietyTexto completo disponível |
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2 |
Material Type: Artigo
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Tris(dialkylamino)aluminums: Syntheses, characterization, volatility comparison and atomic layer deposition of alumina thin filmsWade, Casey R. ; Silvernail, Carter ; Banerjee, Chiranjib ; Soulet, Axel ; McAndrew, James ; Belot, John A.Materials letters, 2007-12, Vol.61 (29), p.5079-5082 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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3 |
Material Type: Artigo
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Toward New Magnetic, Electronic, and Optical Materials: Synthesis and Characterization of New Bimetallic Tetrathiafulvalene Tetrathiolate Building BlocksMcCullough, Richard D ; Belot, John AChemistry of materials, 1994-08, Vol.6 (8), p.1396-1403 [Periódico revisado por pares]American Chemical SocietyTexto completo disponível |
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4 |
Material Type: Artigo
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Thermal reactivity of hydrogenosilsesquioxane gelsBelot, V ; Corriu, R ; Leclercq, D ; Mutin, P. H ; Vioux, AChemistry of materials, 1991-01, Vol.3 (1), p.127-131 [Periódico revisado por pares]American Chemical SocietyTexto completo disponível |
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5 |
Material Type: Artigo
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Polydentate Amines as CVD Precursor Ancillary Ligands. Epitaxial MgO Thin-Film Growth Using a Highly Volatile, Thermally and Air-Stable Magnesium PrecursorBabcock, J. R. ; Benson, D. D. ; Wang, A. ; Edleman, N. L. ; Belot, J. A. ; Metz, M. V. ; Marks, T. J.Chemical vapor deposition, 2000-08, Vol.6 (4), p.180-183 [Periódico revisado por pares]Weinheim: WILEY-VCH Verlag GmbHTexto completo disponível |
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6 |
Material Type: Artigo
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Plasma-Assisted MOCVD Growth of Superconducting NbN Thin Films Using Nb Dialkylamide and Nb Alkylimide PrecursorsLiu, X. ; Babcock, J. R. ; Lane, M. A. ; Belot, J. A. ; Ott, A. W. ; Metz, M. V. ; Kannewurf, C. R. ; Chang, R. P. H. ; Marks, T. J.Chemical vapor deposition, 2001-01, Vol.7 (1), p.25-28 [Periódico revisado por pares]Weinheim: WILEY-VCH Verlag GmbHTexto completo disponível |
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7 |
Material Type: Artigo
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Expedient route to volatile zirconium metal-organic chemical vapor deposition precursors using amide synthons and implementation in yttria-stabilized zirconia film growthBelot, John A. ; McNeely, Richard J. ; Wang, Anchuan ; Reedy, Charles J. ; Marks, Tobin J. ; Yap, Glenn P. A. ; Rheingold, Arnold L.Journal of materials research, 1999-01, Vol.14 (1), p.12-15 [Periódico revisado por pares]New York, USA: Cambridge University PressTexto completo disponível |
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8 |
Material Type: Artigo
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Analysis of the fluoride effect on the phase-selective growth of TlBa2Ca2Cu3O9−x thin films: Phase evolution and microstructure developmentMcNeely, Richard J. ; Belot, John A. ; Marks, Tobin J. ; Wang, Yanguo ; Dravid, Vinayak P. ; Chudzik, Michael P. ; Kannewurf, Carl R. WCAJournal of materials research, 2000-05, Vol.15 (5), p.1083-1097 [Periódico revisado por pares]New York, USA: Cambridge University PressTexto completo disponível |
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9 |
Material Type: Artigo
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Highly volatile, low-melting, fluorine-free precursors for MOCVD of lanthanide oxide-containing thin filmsBELOT, J. A ; WANG, A ; MCNEELY, R. J ; LIABLE-SANDS, L ; RHEINGOLD, A. L ; MARKS, T. JChemical vapor deposition, 1999-03, Vol.5 (2), p.65-69 [Periódico revisado por pares]Weinheim: Wiley-VCHTexto completo disponível |
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10 |
Material Type: Artigo
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Organosilicon gels containing silicon-silicon bonds, precursors to novel silicon oxycarbide compositionsBelot, V. ; Corriu, R.J.P. ; Leclercq, D. ; Mutin, P.H. ; Vioux, A.Journal of non-crystalline solids, 1992, Vol.144 (2-3), p.287-297 [Periódico revisado por pares]AMSTERDAM: Elsevier B.VTexto completo disponível |