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Refinado por: Base de dados/Biblioteca: AUC Wiley Frozen Package in 2012 remover assunto: Materials Science remover Chemistry remover Advanced Materials remover
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Thermoelectric Characterization of Bismuth Telluride Nanowires, Synthesized Via Catalytic Growth and Post-Annealing
Thermoelectric Characterization of Bismuth Telluride Nanowires, Synthesized Via Catalytic Growth and Post-Annealing
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Thermoelectric Characterization of Bismuth Telluride Nanowires, Synthesized Via Catalytic Growth and Post-Annealing

Hamdou, Bacel ; Kimling, Johannes ; Dorn, August ; Pippel, Eckhard ; Rostek, Raimar ; Woias, Peter ; Nielsch, Kornelius

Advanced materials (Weinheim), 2013-01, Vol.25 (2), p.239-244 [Periódico revisado por pares]

Weinheim: WILEY-VCH Verlag

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2
Electrically Controlled Catalytic Nanowire Growth from Solution
Electrically Controlled Catalytic Nanowire Growth from Solution
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Electrically Controlled Catalytic Nanowire Growth from Solution

Dorn, August ; Wong, Cliff R. ; Bawendi, Moungi G.

Advanced materials (Weinheim), 2009-09, Vol.21 (34), p.3479-3482 [Periódico revisado por pares]

Weinheim: WILEY‐VCH Verlag

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3
Nonlinear optical materials for integrated optics: Telecommunications and sensors
Nonlinear optical materials for integrated optics: Telecommunications and sensors
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Nonlinear optical materials for integrated optics: Telecommunications and sensors

Dorn, Reimund ; Baums, Dieter ; Kersten, Peter ; Regener, Rolf

Advanced materials (Weinheim), 1992-07, Vol.4 (7-8), p.464-473 [Periódico revisado por pares]

Weinheim: WILEY-VCH Verlag GmbH

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4
Particle size control during production of ceramic nitride powders
Particle size control during production of ceramic nitride powders
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Particle size control during production of ceramic nitride powders

Dorn, Friedrich W. ; Krquse, Werner ; Schröder, Frank

Advanced materials (Weinheim), 1992-03, Vol.4 (3), p.221-224 [Periódico revisado por pares]

Weinheim: WILEY-VCH Verlag GmbH

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5
SYNTHESIS OF GALLANE AMINE ADDUCTS AS POTENTIAL PRECURSORS FOR GAAS AND (ALGA)AS MOVPE PROCESSES AND THE CRYSTAL-STRUCTURE OF THE (GALLANE.1,3-BIS(DIMETHYLAMINO)PROPANE ) ADDUCT H3GA.N(CH3)2(CH2)3N(CH3)2
SYNTHESIS OF GALLANE AMINE ADDUCTS AS POTENTIAL PRECURSORS FOR GAAS AND (ALGA)AS MOVPE PROCESSES AND THE CRYSTAL-STRUCTURE OF THE (GALLANE.1,3-BIS(DIMETHYLAMINO)PROPANE ) ADDUCT H3GA.N(CH3)2(CH2)3N(CH3)2
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SYNTHESIS OF GALLANE AMINE ADDUCTS AS POTENTIAL PRECURSORS FOR GAAS AND (ALGA)AS MOVPE PROCESSES AND THE CRYSTAL-STRUCTURE OF THE (GALLANE.1,3-BIS(DIMETHYLAMINO)PROPANE ) ADDUCT H3GA.N(CH3)2(CH2)3N(CH3)2

LORBERTH, J ; DORN, R ; WOCADLO, S ; MASSA, W ; GOBEL, EO ; MARSCHNER, T ; PROTZMANN, H ; ZSEBOK, O ; STOLZ, W

Advanced materials (Weinheim), 1992-09, Vol.4 (9), p.576-579 [Periódico revisado por pares]

DEERFIELD BEACH: Wiley

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