A new method for determination of the fixed charge density at the buried oxide/underlying substrate interface in SOI MOSFETs
Marcelo Antonio Pavanello João Antonio Martino 1959-; Symposium Silicon-on-Insulator Technology and Devices (3d 1997 Paris, France)
Cristoloveanu, S et al Proceedings 3. Symposium on Silicon-on-Insulator Technology and Devices Pennington: The Electrochemical Society, 1997
Pennington The Electrochemical Society 1997
Item não circula. Consulte sua biblioteca.(Acessar)