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A new method for determination of the fixed charge density at the buried oxide/underlying substrate interface in SOI MOSFETs
A new method for determination of the fixed charge density at the buried oxide/underlying substrate interface in SOI MOSFETs
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A new method for determination of the fixed charge density at the buried oxide/underlying substrate interface in SOI MOSFETs

Marcelo Antonio Pavanello João Antonio Martino 1959-; Symposium Silicon-on-Insulator Technology and Devices (3d 1997 Paris, France)

Cristoloveanu, S et al Proceedings 3. Symposium on Silicon-on-Insulator Technology and Devices Pennington: The Electrochemical Society, 1997

Pennington The Electrochemical Society 1997

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Deste Autor:

  1. Symposium Silicon-on-Insulator Technology and Devices
  2. Pavanello, M
  3. Martino, J

Neste Assunto:

  1. Circuitos Integrados
  2. Microeletrônica

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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