Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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0.065 μm gate InGaP/InGaAs/GaAs pseudomorphic HEMTs with highly-doped 11.5 nm thick InGaP electron supply layersNihei, M. ; Hara, N. ; Suehiro, H. ; Kuroda, S.Solid-state electronics, 1997-10, Vol.41 (10), p.1647-1650, Article 1647 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
2 |
Material Type: Artigo
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0.1-μm high performance double heterojunction In0.32Al0.68As/In0.33Ga0.67As metamorphic HEMTs on GaAsZaknoune, M ; Cordier, Y ; Bollaert, S ; Ferre, D ; Théron, D ; Crosnier, YSolid-state electronics, 2000-09, Vol.44 (9), p.1685-1688 [Periódico revisado por pares]Texto completo disponível |
3 |
Material Type: Artigo
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0.15 μm gate-length AlGaN/GaN HEMTs with varying gate recess lengthKuliev, A ; Kumar, V ; Schwindt, R ; Selvanathan, D ; Dabiran, A.M ; Chow, P ; Adesida, ISolid-state electronics, 2003, Vol.47 (1), p.117-122 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
4 |
Material Type: magazinearticle
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0.25 MICROMETER PRODUCTION LITHOGRAPHYPOWELL, MWSolid state technology, 1992-01, Vol.35 (1), p.41-41NASHUA: PENNWELL PUBL CO SOLID STATE TECHNOLOGY OFFICETexto completo disponível |
5 |
Material Type: Artigo
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0.25 μm fully depleted SOI MOSFETs for RF mixed analog-digital circuits, including a comparison with partially depleted devices with relation to high frequency noise parametersVanmackelberg, M ; Raynaud, C ; Faynot, O ; Pelloie, J.-L ; Tabone, C ; Grouillet, A ; Martin, F ; Dambrine, G ; Picheta, L ; Mackowiak, E ; Llinares, P ; Sevenhans, J ; Compagne, E ; Fletcher, G ; Flandre, D ; Dessard, V ; Vanhoenacker, D ; Raskin, J.-PSolid-state electronics, 2002-03, Vol.46 (3), p.379-386 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
6 |
Material Type: Artigo
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0.25-μm gate In0.48Ga0.52P/In0.20Ga0.80As/GaAs pseudomorphic high electron mobility transistors grown by solid-source molecular beam epitaxyYoon, S.F ; Gay, B.P ; Zheng, H.Q ; Ang, K.S ; Wang, H ; Ng, G.ISolid-state electronics, 1999-04, Vol.43 (4), p.785-789 [Periódico revisado por pares]Texto completo disponível |
7 |
Material Type: Ata de Congresso
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0.25V FDSOI CMOS technology for ultra-low voltage applicationsHuiling Shang ; White ; Adams2002 IEEE International SOI Conference, 2002, p.37-38Piscataway NJ: IEEETexto completo disponível |
8 |
Material Type: Artigo
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A 0.1-μm MHEMT millimeter-wave IC technology designed for manufacturabilityRohdin, Hans ; Wakita, Arlene ; Nagy, Avelina ; Robbins, Virginia ; Moll, Nick ; Su, Chung-yiSolid-state electronics, 1999-08, Vol.43 (8), p.1645-1654 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
9 |
Material Type: Artigo
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A 0.10 μm buried p-channel MOSFET with through the gate boron implantation and arsenic tilted pocketGuegan, G. ; Deleonibus, S. ; Caillat, C. ; Tedesco, S. ; Dal’zotto, B. ; Heitzmann, M. ; Nier, M.E. ; Mur, P.Solid-state electronics, 2002-03, Vol.46 (3), p.343-348 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
10 |
Material Type: Ata de Congresso
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A 0.13μm CMOS four-channel ADSL2+ analog front-end for CO applications with 75mW per channelOSWAL, S ; MUJICA, F ; MENON, R ; GIREESH, R ; AHUJA, N ; GAMBHIR, M ; SADAFALE, M ; PRASAD, S ; SRINIVASA, R ; SHARMA, B ; RAYCHOUDHARY, A ; KHASNIS, H ; SHARMA, A ; SRIRAM, R ; VIJAYVARDHAN, BPiscataway, New Jersey: IEEE 2004Texto completo disponível |