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Refinado por: Nome da Publicação: Journal Of Crystal Growth remover assunto: Technology remover
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Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280 nm
Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280 nm
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Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280 nm

Li, X ; Le Gac, G ; Bouchoule, S ; El Gmili, Y ; Patriarche, G ; Sundaram, S ; Disseix, P ; Reveret, F ; Leymarie, J ; Streque, J ; Genty, F ; Salvestrini, J-P ; Dupuis, R D ; Li, X-H ; Voss, P L ; Ougazzaden, A

Journal of crystal growth, 2015-12, Vol.432, p.37-44 [Periódico revisado por pares]

Elsevier

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2
Parasitic reaction and its effect on the growth rate of AlN by metalorganic chemical vapor deposition
Parasitic reaction and its effect on the growth rate of AlN by metalorganic chemical vapor deposition
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Parasitic reaction and its effect on the growth rate of AlN by metalorganic chemical vapor deposition

Zhao, D.G. ; Zhu, J.J. ; Jiang, D.S. ; Yang, Hui ; Liang, J.W. ; Li, X.Y. ; Gong, H.M.

Journal of crystal growth, 2006-03, Vol.289 (1), p.72-75 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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3
Optical properties and electronic structure of InN and In-rich group III-nitride alloys
Optical properties and electronic structure of InN and In-rich group III-nitride alloys
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Optical properties and electronic structure of InN and In-rich group III-nitride alloys

Walukiewicz, W ; Li, S.X ; Wu, J ; Yu, K.M ; Ager, J.W ; Haller, E.E ; Lu, Hai ; Schaff, William J

Journal of crystal growth, 2004-08, Vol.269 (1), p.119-127 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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4
Effects of continuously or step-continuously graded buffer on the performance of wavelength extended InGaAs photodetectors
Effects of continuously or step-continuously graded buffer on the performance of wavelength extended InGaAs photodetectors
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Effects of continuously or step-continuously graded buffer on the performance of wavelength extended InGaAs photodetectors

Du, B. ; Gu, Y. ; Zhang, Y.G. ; Chen, X.Y. ; Xi, S.P. ; Ma, Y.J. ; Ji, W.Y. ; Shi, Y.H. ; Li, X. ; Gong, H.M.

Journal of crystal growth, 2016-04, Vol.440, p.1-5 [Periódico revisado por pares]

Elsevier B.V

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5
Self-assembled growth of BiFeO3 meso-octahedral particles synthesized by a facile surfactant-free hydrothermal method
Self-assembled growth of BiFeO3 meso-octahedral particles synthesized by a facile surfactant-free hydrothermal method
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Self-assembled growth of BiFeO3 meso-octahedral particles synthesized by a facile surfactant-free hydrothermal method

Hou, L. ; Lu, Z.Y. ; Dai, Y.C. ; Zuo, K.H. ; Xia, Y.F. ; Ren, Z.M. ; Wu, J. ; Lu, X.G. ; Zeng, Y.P. ; Li, X.

Journal of crystal growth, 2016-01, Vol.434, p.42-46 [Periódico revisado por pares]

Elsevier B.V

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6
Motion of equiaxed grains during directional solidification under static magnetic field
Motion of equiaxed grains during directional solidification under static magnetic field
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Motion of equiaxed grains during directional solidification under static magnetic field

Salloum-Abou-Jaoude, G. ; Wang, J. ; Abou-Khalil, L. ; Reinhart, G. ; Ren, Z. ; Mangelinck-Noel, N. ; Li, X. ; Fautrelle, Y. ; Nguyen-Thi, Henri

Journal of crystal growth, 2015-05, Vol.417, p.25-30 [Periódico revisado por pares]

Elsevier B.V

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7
Increasing the growth velocity of coupled eutectics in directional solidification of off-eutectic alloys
Increasing the growth velocity of coupled eutectics in directional solidification of off-eutectic alloys
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Increasing the growth velocity of coupled eutectics in directional solidification of off-eutectic alloys

Li, S.M. ; Quan, Q.R. ; Li, X.L. ; Fu, H.Z.

Journal of crystal growth, 2011, Vol.314 (1), p.279-284 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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8
Improvement of fast homoepitaxial growth and defect reduction techniques of thick 4H-SiC epilayers
Improvement of fast homoepitaxial growth and defect reduction techniques of thick 4H-SiC epilayers
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Improvement of fast homoepitaxial growth and defect reduction techniques of thick 4H-SiC epilayers

Yan, G.G. ; Liu, X.F. ; Shen, Z.W. ; Wen, Z.X. ; Chen, J. ; Zhao, W.S. ; Wang, L. ; Zhang, F. ; Zhang, X.H. ; Li, X.G. ; Sun, G.S. ; Zeng, Y.P. ; Wang, Z.G.

Journal of crystal growth, 2019-01, Vol.505, p.1-4 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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9
Thin MnO and NiO films grown using atomic layer deposition from ethylcyclopentadienyl type of precursors
Thin MnO and NiO films grown using atomic layer deposition from ethylcyclopentadienyl type of precursors
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Thin MnO and NiO films grown using atomic layer deposition from ethylcyclopentadienyl type of precursors

Lu, H.L. ; Scarel, G. ; Li, X.L. ; Fanciulli, M.

Journal of crystal growth, 2008-12, Vol.310 (24), p.5464-5468 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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10
Infrared spectroscopy of polycrystalline ZnO and ZnO:N thin films
Infrared spectroscopy of polycrystalline ZnO and ZnO:N thin films
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Infrared spectroscopy of polycrystalline ZnO and ZnO:N thin films

Keyes, B.M. ; Gedvilas, L.M. ; Li, X. ; Coutts, T.J.

Journal of crystal growth, 2005-08, Vol.281 (2), p.297-302 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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