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| Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
|---|---|---|---|
| 1 |
Material Type: Artigo
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(001) and (111) Single-Oriented Highly Epitaxial CeO2 Thin Films on r-Cut Sapphire SubstratesBick, D. S. ; Sharath, S. U. ; Hoffman, I. ; Major, M. ; Kurian, J. ; Alff, L.Journal of electronic materials, 2015-08, Vol.44 (8), p.2930-2938 [Periódico revisado por pares]New York: Springer USTexto completo disponível |
| 2 |
Material Type: Artigo
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0.4% Electrostrain at Low Field in Lead-Free Bi-Based Relaxor Piezoceramics by La DopingDinh, Thi Hinh ; Han, Hyoung-Su ; Tran, Vu Diem Ngoc ; Le Van, Vinh ; Hung, Nguyen Ba ; Lee, Jae-ShinJournal of electronic materials, 2020-10, Vol.49 (10), p.6080-6086 [Periódico revisado por pares]New York: Springer USTexto completo disponível |
| 3 |
Material Type: Artigo
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1/f Noise in HgCdTe Focal-Plane ArraysKinch, M.A. ; Strong, R.L. ; Schaake, C.A.Journal of electronic materials, 2013-11, Vol.42 (11), p.3243-3251 [Periódico revisado por pares]Boston: Springer USTexto completo disponível |
| 4 |
Material Type: Artigo
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1D/2D Co3O4/Graphene Composite Electrodes for High-Performance Supercapacitor ApplicationsVenkatachalam, V. ; Jayavel, R.Journal of electronic materials, 2020-05, Vol.49 (5), p.3174-3181 [Periódico revisado por pares]New York: Springer USTexto completo disponível |
| 5 |
Material Type: Artigo
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(211)-Oriented Domain Formation During Growth of ZnTe on m-Plane Sapphire by MBENakasu, Taizo ; Kobayashi, Masakazu ; Togo, Hiroyoshi ; Asahi, ToshiakiJournal of electronic materials, 2014-04, Vol.43 (4), p.921-925 [Periódico revisado por pares]Boston: Springer USTexto completo disponível |
| 6 |
Material Type: Artigo
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2.2 kV Breakdown Voltage AlGaN/GaN Schottky Barrier Diode with Polarization Doping Modulated 3D Hole Gas Cap Layer and Polarization Junction StructureLiao, Fengbo ; Zhang, Keming ; Zeng, Ni ; Lian, Mengxiao ; Li, Jialin ; Zhang, Xichen ; Tian, Ziwei ; Yin, Yi-AnJournal of electronic materials, 2022-07, Vol.51 (7), p.3613-3623 [Periódico revisado por pares]New York: Springer USTexto completo disponível |
| 7 |
Material Type: Artigo
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2.3-μm High-Power Type I Quantum-Well GaInAsSb/AlGaAsSb/GaSb Laser Diode Arrays with Increased Fill FactorDonetsky, D. ; Chen, J. ; Shterengas, L. ; Kipshidze, G. ; Westerfeld, D.Journal of electronic materials, 2008-12, Vol.37 (12), p.1770-1773 [Periódico revisado por pares]Boston: Springer USTexto completo disponível |
| 8 |
Material Type: Artigo
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2D Modeling of the Annealing Process After Ion Implantation in n-on-p HgCdTeGan, Zhikai ; Zhao, Yu ; Lin, Chun ; Sun, Quanzhi ; Zhou, Songmin ; Wang, Xi ; Li, XunJournal of electronic materials, 2023-04, Vol.52 (4), p.2871-2877 [Periódico revisado por pares]New York: Springer USTexto completo disponível |
| 9 |
Material Type: Livro
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2D Nanoelectronics: Physics and Devices of Atomically Thin MaterialsDragoman, Mircea Dragoman, DanielaCham: Springer Nature 2016Sem texto completo |
| 10 |
Material Type: Artigo
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2D Si3N as a Promising Anode Material for Li/Na-Ion Batteries from First-Principles StudyLi, Hui ; Hou, Jianhua ; Jiang, DayongJournal of electronic materials, 2020-07, Vol.49 (7), p.4180-4185 [Periódico revisado por pares]New York: Springer USTexto completo disponível |
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