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Memristor-based input delay reservoir computing system for temporal signal prediction
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Memristor-based input delay reservoir computing system for temporal signal prediction

Lu, Zhen-Ni ; Ye, Jing-Ting ; Zhang, Zhong-Da ; Cai, Jia-Wei ; Pan, Xiang-Yu ; Xu, Jian-Long ; Gao, Xu ; Zhong, Ya-Nan ; Wang, Sui-Dong

Microelectronic engineering, 2024-10, Vol.293, p.112240, Article 112240 [Periódico revisado por pares]

Elsevier B.V

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Upcycling spent Ni–Cd battery for selective synthesis of nanoparticles to harness into electro-conductive thin films: An eco-friendly approach for e-waste management
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Upcycling spent Ni–Cd battery for selective synthesis of nanoparticles to harness into electro-conductive thin films: An eco-friendly approach for e-waste management

Mahmood, Anum ; Gill, Rohama ; Raffi, Muhammad

Materials science in semiconductor processing, 2024-10, Vol.181, p.108626, Article 108626 [Periódico revisado por pares]

Elsevier Ltd

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Simulation of 2D ReS2/WSe2 based complementary field-effect transistors towards 1 nm technology node
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Simulation of 2D ReS2/WSe2 based complementary field-effect transistors towards 1 nm technology node

Zhang, Chi ; Li, Enlong ; Zhou, Hongmiao ; Xu, Chenhao ; Li, Wenwu

Microelectronic engineering, 2024-09, Vol.292, p.112225, Article 112225 [Periódico revisado por pares]

Elsevier B.V

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4
Scalable Fabrication of Fiber-End Microtips Containing Diamond Defects for Sensing Application
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Scalable Fabrication of Fiber-End Microtips Containing Diamond Defects for Sensing Application

Bian, Ce ; Jing, Jixiang ; Zheng, Gaohan ; Chu, Zhiqin ; Wang, Ruohui

IEEE photonics technology letters, 2024-08, Vol.36 (16), p.973-976

New York: IEEE

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The Roles of Contact Resistivity and Tape Architecture on Transverse Resistance of an NI HTS Coil
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The Roles of Contact Resistivity and Tape Architecture on Transverse Resistance of an NI HTS Coil

Musso, Andrea ; Bang, Jeseok ; Riva, Nicolo ; Yan, Yufan ; Lee, Jung Tae ; Hahn, Seungyong

IEEE transactions on applied superconductivity, 2024-08, Vol.34 (5), p.1-5 [Periódico revisado por pares]

New York: IEEE

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A new stacked gate oxide L-shaped tunnel field effect transistor
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A new stacked gate oxide L-shaped tunnel field effect transistor

Eyvazi, Kaveh ; Yaghoubi, Hamid Reza ; Karami, Mohammad Azim

Journal of computational electronics, 2024-08, Vol.23 (4), p.740-750 [Periódico revisado por pares]

New York: Springer US

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Advancing microwave ablation applicators: integrating computational modeling of a graphene-based applicator with machine learning for ablation zone prediction
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Advancing microwave ablation applicators: integrating computational modeling of a graphene-based applicator with machine learning for ablation zone prediction

Singh, Suyash Kumar ; Yadav, Amar Nath

Journal of computational electronics, 2024-08, Vol.23 (4), p.832-850 [Periódico revisado por pares]

New York: Springer US

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8
One-Pot Template-Free Synthesis of Mesoporous ZnCo2O4 Microbubbles for Oxygen Evolution Reaction
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One-Pot Template-Free Synthesis of Mesoporous ZnCo2O4 Microbubbles for Oxygen Evolution Reaction

Zheng, Yongshuo ; Wu, Jialong ; Guo, Zhizhong ; Qin, Jiayi ; Wu, Jin-Ming ; Wen, Wei

Journal of electronic materials, 2024-08, Vol.53 (8), p.4370-4377 [Periódico revisado por pares]

New York: Springer US

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Contact Resistivity of Submicron Hybrid Bonding Pads Down to 400 nm
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Contact Resistivity of Submicron Hybrid Bonding Pads Down to 400 nm

Lhostis, S. ; Ayoub, B. ; Sart, C. ; Moreau, S. ; Souchier, E. ; Gusmao Cacho, M. G. ; Deloffre, E. ; Mermoz, S. ; Rey, C. ; Le Roux, F. ; Aybeke, E. ; Gallois-Garreignot, S. ; Frémont, H. ; Tournier, A.

Journal of electronic materials, 2024-08, Vol.53 (8), p.4421-4431 [Periódico revisado por pares]

New York: Springer US

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Simulating the Effect of Inserting Sb2S3 as Hole Transport Layer on SnS-Based Thin-Film Solar Cells
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Simulating the Effect of Inserting Sb2S3 as Hole Transport Layer on SnS-Based Thin-Film Solar Cells

Islam, Benjer ; Hosen, Adnan ; Khan, Tanvir Mahtab ; Rahman, Md. Ferdous ; Rahman, Md. Hafijur ; Islam, Md. Saiful ; Ahmed, Sheikh Rashel Al

Journal of electronic materials, 2024-08, Vol.53 (8), p.4726-4739 [Periódico revisado por pares]

New York: Springer US

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