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| Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
|---|---|---|---|
| 1 |
Material Type: Ata de Congresso
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NATO-Advanced research workshop on undercooled metallic melts : properties, solidification and metastable phasesHERLACH, Dieter M ; EGRY, Ivan ; BAERI, P ; SPAEPEN, FMaterials science & engineering. A, Structural materials : properties, microstructure and processing, 1994, Vol.178 (1-2) [Periódico revisado por pares]Amsterdam: ElsevierTexto completo disponível |
| 2 |
Material Type: Artigo
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Novel core effects in Cs/GaAs(110) overlayers : adsorption-induced buckling enhancementOHNO, T ; SHIRAISHI, KSolid state communications, 1994, Vol.92 (5), p.397-400 [Periódico revisado por pares]Oxford: ElsevierTexto completo disponível |
| 3 |
Material Type: Artigo
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Organic electroluminescent devices using a mixed single layerNAKA, S ; SHINNO, K ; OKADA, H ; ONNAGAWA, H ; MIYASHITA, KJapanese Journal of Applied Physics, 1994, Vol.33 (12B), p.L1772-L1774 [Periódico revisado por pares]Tokyo: Japanese journal of applied physicsTexto completo disponível |
| 4 |
Material Type: Artigo
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A 1.5-ns cycle-time 18-kb pseudo-dual-port RAM with 9K logic gates: VLSI CircuitsIWABUCHI, M ; USAMI, M ; KASHIYAMA, M ; OOMORI, T ; MURATA, S ; HIRAMOTO, T ; HASHIMOTO, T ; NAKAJIMA, YIEEE journal of solid-state circuits, 1994, Vol.29 (4), p.419-425 [Periódico revisado por pares]New York, NY: Institute of Electrical and Electronics EngineersTexto completo disponível |
| 5 |
Material Type: Artigo
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An 8-bit multitask micropower RISC core: The 1993 European solid-state circuits conferencePEROTTO, J.-F ; LAMOTHE, C ; ARM, C ; PIGUET, C ; DIJKSTRA, E ; FINK, S ; SANCHEZ, E ; WATTENHOFER, J.-P ; CECCHINI, MIEEE journal of solid-state circuits, 1994, Vol.29 (8), p.986-991 [Periódico revisado por pares]New York, NY: Institute of Electrical and Electronics EngineersTexto completo disponível |
| 6 |
Material Type: Artigo
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Coulomb blockade of two quantum dots in seriesSAKAMOTO, T ; SHUNGWOO HWANG ; NIHEY, F ; NAKAMURA, Y ; NAKAMURA, KJapanese Journal of Applied Physics, 1994, Vol.33 (9A), p.4876-4877 [Periódico revisado por pares]Tokyo: Japanese journal of applied physicsTexto completo disponível |
| 7 |
Material Type: Artigo
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Modeling of the hot electron subpopulation and its application to impact ionization in submicron silicon devices. I: Transport equationsSCROBOHACI, P. G ; TING-WEI TANGIEEE transactions on electron devices, 1994, Vol.41 (7), p.1197-1205 [Periódico revisado por pares]New York, NY: Institute of Electrical and Electronics EngineersTexto completo disponível |
| 8 |
Material Type: Artigo
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Control of MMST RTP: repeatability, uniformity, and integration for flexible manufacturing: Microelectronics manufacturing science and technologySCHAPER, C ; MOSLEHI, M ; SARASWAT, K ; KAILATH, TIEEE transactions on semiconductor manufacturing, 1994, Vol.7 (2), p.202-219 [Periódico revisado por pares]New York, NY: Institute of Electrical and Electronics EngineersTexto completo disponível |
| 9 |
Material Type: Artigo
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Resistivity study of P-, B-, and BF2-implanted polycrystalline Si1-xGex films with subsequent annealingNOGUCHI, T ; TSAI, J. A ; TANG, A. J ; REIF, RJapanese journal of applied physics, 1994, Vol.33 (12B), p.L1748-L1750 [Periódico revisado por pares]Tokyo: Japanese journal of applied physicsTexto completo disponível |
| 10 |
Material Type: Artigo
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Band offset transitivity in the AlGaAs/GaP/InP systemMELENDEZ, J ; ARMELLES, G ; MAZUELAS, A ; RUIZ, A ; BACQUET, G ; HASSEN, FJapanese Journal of Applied Physics, 1994, Vol.33 (9A), p.4855-4858 [Periódico revisado por pares]Tokyo: Japanese journal of applied physicsTexto completo disponível |
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