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Refinado por: Nome da Publicação: Applied Physics Letters remover assunto: Semiconductor Devices remover
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Rapid synthesis of MoS2 for transistors and memristors
Rapid synthesis of MoS2 for transistors and memristors
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Rapid synthesis of MoS2 for transistors and memristors

Lin, Weiyi

Applied physics letters, 2024-06, Vol.124 (24) [Periódico revisado por pares]

Melville: American Institute of Physics

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2
Experimental demonstration of an electroacoustic transistor
Experimental demonstration of an electroacoustic transistor
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Experimental demonstration of an electroacoustic transistor

Kuchibhatla, Sai Aditya Raman ; Leamy, Michael J.

Applied physics letters, 2024-06, Vol.124 (24) [Periódico revisado por pares]

Melville: American Institute of Physics

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3
Dual operation modes of the Ge Schottky barrier metal–oxide–semiconductor field-effect transistor
Dual operation modes of the Ge Schottky barrier metal–oxide–semiconductor field-effect transistor
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Dual operation modes of the Ge Schottky barrier metal–oxide–semiconductor field-effect transistor

Lidsky, D. ; Allemang, C. R. ; Hutchins-Delgado, T. ; James, A. R. ; Allen, P. ; Saleh Ziabari, M. ; Sharma, P. ; Bradicich, A. M. ; Kuo, W. C.-H. ; House, S. D. ; Lu, T. M.

Applied physics letters, 2024-06, Vol.124 (23) [Periódico revisado por pares]

Melville: American Institute of Physics

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4
Threshold voltage mapping at the nanoscale of GaN-based high electron mobility transistor structures using hyperspectral scanning capacitance microscopy
Threshold voltage mapping at the nanoscale of GaN-based high electron mobility transistor structures using hyperspectral scanning capacitance microscopy
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Threshold voltage mapping at the nanoscale of GaN-based high electron mobility transistor structures using hyperspectral scanning capacitance microscopy

Chen, Chen ; Ghosh, Saptarsi ; De Wolf, Peter ; Liang, Zhida ; Adams, Francesca ; Kappers, Menno J. ; Wallis, David J. ; Oliver, Rachel A.

Applied physics letters, 2024-06, Vol.124 (23) [Periódico revisado por pares]

Melville: American Institute of Physics

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5
High-performance GaN metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) using Sc0.2Al0.8N/SiNX as composite gate dielectric
High-performance GaN metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) using Sc0.2Al0.8N/SiNX as composite gate dielectric
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High-performance GaN metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) using Sc0.2Al0.8N/SiNX as composite gate dielectric

Huang, Qizhi ; Deng, Xuguang ; Zhang, Li ; Lin, Wenkui ; Cheng, Wei ; Yu, Guohao ; Ju, Tao ; Mudiyanselage, Dinusha Herath ; Wang, Dawei ; Fu, Houqiang ; Zeng, Zhongming ; Zhang, Baoshun ; Xu, Feng

Applied physics letters, 2024-06, Vol.124 (23) [Periódico revisado por pares]

Melville: American Institute of Physics

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6
Reverse distribution of self-driven photocurrent response hotspots in layer-dependent MoS2 devices
Reverse distribution of self-driven photocurrent response hotspots in layer-dependent MoS2 devices
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Reverse distribution of self-driven photocurrent response hotspots in layer-dependent MoS2 devices

Yuan, Youneng ; Xin, Rui ; Huang, Zhengdong ; Huang, Zhaoyang ; Xia, Hui ; Li, Tianxin

Applied physics letters, 2024-05, Vol.124 (22) [Periódico revisado por pares]

Melville: American Institute of Physics

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7
Controllable carrier transfer modulation of ambipolar van der Waals semiconductors toward forksheet FETs
Controllable carrier transfer modulation of ambipolar van der Waals semiconductors toward forksheet FETs
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Controllable carrier transfer modulation of ambipolar van der Waals semiconductors toward forksheet FETs

Li, Dong ; Qi, Ruijuan ; Zhu, Pengfei ; Wang, Jun ; Zhang, Jinzhong ; Li, Jun ; Zeng, Longhui ; Li, Mengjiao ; Hu, Zhigao

Applied physics letters, 2024-05, Vol.124 (21) [Periódico revisado por pares]

Melville: American Institute of Physics

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8
Realization of single MoTe2 crystal in-plane TFET by laser-induced doping technique
Realization of single MoTe2 crystal in-plane TFET by laser-induced doping technique
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Realization of single MoTe2 crystal in-plane TFET by laser-induced doping technique

Xie, Tianshun ; Ke, Mengnan ; Ueno, Keiji ; Watanabe, Kenji ; Taniguchi, Takashi ; Aoki, Nobuyuki

Applied physics letters, 2024-05, Vol.124 (21) [Periódico revisado por pares]

Melville: American Institute of Physics

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9
High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C
High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C
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High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C

Niroula, John ; Xie, Qingyun ; Rajput, Nitul S. ; Darmawi-Iskandar, Patrick K. ; Rahman, Sheikh Ifatur ; Luo, Shisong ; Palash, Rafid Hassan ; Sikder, Bejoy ; Yuan, Mengyang ; Yadav, Pradyot ; Micale, Gillian K. ; Chowdhury, Nadim ; Zhao, Yuji ; Rajan, Siddharth ; Palacios, Tomás

Applied physics letters, 2024-05, Vol.124 (20) [Periódico revisado por pares]

Melville: American Institute of Physics

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10
High-responsivity, high-detectivity, broadband infrared photodetector based on MoS2/BP/MoS2 junction field-effect transistor
High-responsivity, high-detectivity, broadband infrared photodetector based on MoS2/BP/MoS2 junction field-effect transistor
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High-responsivity, high-detectivity, broadband infrared photodetector based on MoS2/BP/MoS2 junction field-effect transistor

Shu, Xinrui ; Wu, Jianfeng ; Zhong, Fan ; Zhang, Xinlei ; Fu, Qiang ; Han, Xu ; Zhang, Jialin ; Lu, Junpeng ; Ni, Zhenhua

Applied physics letters, 2024-04, Vol.124 (18) [Periódico revisado por pares]

Melville: American Institute of Physics

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