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Enhancing light absorption of deep ultraviolet photodiodes through intelligent algorithm-guided design of resonant nano-optical structures
Enhancing light absorption of deep ultraviolet photodiodes through intelligent algorithm-guided design of resonant nano-optical structures
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Enhancing light absorption of deep ultraviolet photodiodes through intelligent algorithm-guided design of resonant nano-optical structures

Zhu, Yifan ; Lu, Huimin ; Wang, Jianping ; Feng, Liya ; Ma, Jianhua ; Yu, Tongjun ; Li, Junze

Semiconductor science and technology, 2024-07, Vol.39 (7), p.75007 [Periódico revisado por pares]

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Effect of gas pre-decomposition device on the growth of GaN epitaxial layer
Effect of gas pre-decomposition device on the growth of GaN epitaxial layer
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Effect of gas pre-decomposition device on the growth of GaN epitaxial layer

Li, Yazhou ; Yao, Weizhen ; Ma, Zhanhong ; Yang, Shaoyan ; Liu, Xianglin ; Li, Chengming ; Wang, Zhanguo

Semiconductor science and technology, 2024-07, Vol.39 (7), p.75005 [Periódico revisado por pares]

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3
Superjunction IGBT with split carrier storage layer
Superjunction IGBT with split carrier storage layer
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Superjunction IGBT with split carrier storage layer

Yoon, Tae Young ; Shin, Dongho ; Kim, Hyunwoo ; Kim, Jang Hyun

Semiconductor science and technology, 2024-07, Vol.39 (7), p.75003 [Periódico revisado por pares]

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4
Nonvolatile bipolar resistive switching characteristics of aluminum oxide grown by thermal oxidation processes
Nonvolatile bipolar resistive switching characteristics of aluminum oxide grown by thermal oxidation processes
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Nonvolatile bipolar resistive switching characteristics of aluminum oxide grown by thermal oxidation processes

Jhang, Wun-Ciang ; Chien, Yu-Sheng ; Hsu, Chih-Chieh

Semiconductor science and technology, 2024-07, Vol.39 (7), p.7 [Periódico revisado por pares]

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5
Ultraviolet electroluminescence with electrically tunable colour from epitaxial n-(0001)ZnO/p-(0001)GaN light-emitting diodes
Ultraviolet electroluminescence with electrically tunable colour from epitaxial n-(0001)ZnO/p-(0001)GaN light-emitting diodes
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Ultraviolet electroluminescence with electrically tunable colour from epitaxial n-(0001)ZnO/p-(0001)GaN light-emitting diodes

Arora, Simran ; Sikdar, Subhrajit ; Dhar, Subhabrata

Semiconductor science and technology, 2024-07, Vol.39 (7), p.75009 [Periódico revisado por pares]

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6
Comparing the mean inner potential of Zn-VI semiconductor nanowires using off-axis electron holography
Comparing the mean inner potential of Zn-VI semiconductor nanowires using off-axis electron holography
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Comparing the mean inner potential of Zn-VI semiconductor nanowires using off-axis electron holography

Jose, Anitha ; Al-Turk, Sarry ; Ruda, Harry E ; Watkins, Simon P ; McCartney, Martha R ; Cordoba, Cristina ; Kavanagh, Karen L

Semiconductor science and technology, 2024-07, Vol.39 (7), p.75004 [Periódico revisado por pares]

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7
Study of drain-induced channel effects in vertical GaN junction field-effect transistors
Study of drain-induced channel effects in vertical GaN junction field-effect transistors
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Study of drain-induced channel effects in vertical GaN junction field-effect transistors

Chen, Zengfa ; Yue, Wen ; Zhu, Renqiang ; Wang, Min ; Zhu, Xi ; Lin, Jinpei ; Huang, Shuangwu ; Liu, Xinke

Semiconductor science and technology, 2024-07, Vol.39 (7), p.75002 [Periódico revisado por pares]

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8
Effect of distributed Bragg reflectors on optoelectronic characteristics of GaN-based flip-chip light-emitting diodes
Effect of distributed Bragg reflectors on optoelectronic characteristics of GaN-based flip-chip light-emitting diodes
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Effect of distributed Bragg reflectors on optoelectronic characteristics of GaN-based flip-chip light-emitting diodes

Sun, Yuechang ; Shi, Lang ; Cui, Yongjin ; Tang, Bin ; Zhou, Qianxi ; Zhuang, Jiaming ; Zhou, Shengjun

Semiconductor science and technology, 2024-07, Vol.39 (7), p.75008 [Periódico revisado por pares]

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9
Terahertz emission mechanisms in low-temperature-grown and semi-insulating gallium arsenide photoconductive antenna devices excited at above- and below-bandgap photon energies
Terahertz emission mechanisms in low-temperature-grown and semi-insulating gallium arsenide photoconductive antenna devices excited at above- and below-bandgap photon energies
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Terahertz emission mechanisms in low-temperature-grown and semi-insulating gallium arsenide photoconductive antenna devices excited at above- and below-bandgap photon energies

F Dela Rosa, L N ; Publico, J B ; F Cabello, N I ; R Ferrolino, J P ; P Juguilon, V P ; M Verona, I C ; Salvador, A A ; Somintac, A S ; De Los Reyes, A E ; Bardolaza, H R ; Estacio, E S

Semiconductor science and technology, 2024-07, Vol.39 (7), p.75010 [Periódico revisado por pares]

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10
Analytical models of the electric field and carrier transit time in the base of bipolar junction transistors
Analytical models of the electric field and carrier transit time in the base of bipolar junction transistors
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Analytical models of the electric field and carrier transit time in the base of bipolar junction transistors

Cao, Jian ; Bai, Yujie ; Yang, Jianhong

Semiconductor science and technology, 2024-06, Vol.39 (6), p.6 [Periódico revisado por pares]

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