Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dotsC A Duarte Euzi Conceicao Fernandes da Silva; A. A Quivy (Alain André); M J da Silva; S Martini; J. R Leite (José Roberto); E A Meneses; E LaurettoJournal of Applied Physics Woodbury v. 93, n. 10, p. 6279-6283, 2003Woodbury 2003Acesso online |
2 |
Material Type: Artigo
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Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dotsC A Duarte Euzi Conceicao Fernandes da Silva; A. A Quivy (Alain André); M J da Silva; S Martini; J. R Leite (José Roberto); E A Meneses; E LaurettoJournal of Applied Physics Woodbury v. 93, n. 10, p. 6279-6283, 2003Woodbury 2003Acesso online |
3 |
Material Type: Artigo
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Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surfaceS Martini A. A Quivy (Alain André); T. E Lamas (Tomás Erikson); M J da Silva; Euzi Conceicao Fernandes da Silva; J. R Leite (José Roberto)Journal of Crystal Growth Amsterdam v. 251, n. 1-4, p. 101-105, 2003Amsterdam 2003Acesso online |
4 |
Material Type: Artigo
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Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surfaceS Martini A. A Quivy (Alain André); T. E Lamas (Tomás Erikson); M J da Silva; Euzi Conceicao Fernandes da Silva; J. R Leite (José Roberto)Journal of Crystal Growth Amsterdam v. 251, n. 1-4, p. 101-105, 2003Amsterdam 2003Acesso online |
5 |
Material Type: Artigo
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Influence of illumination on the quantum mobility of a two-dimensional electron gas in Si 'sigma'-doped 'GaAs/In IND.0.15' 'Ga IND.0.85'As quantum wellsA Cavalheiro Euzi Conceicao Fernandes da Silva; A. A Quivy (Alain André); E K Takahashi; S Martini; M J da Silva; E A Meneses; J. R Leite (José Roberto)Journal of Physics: Condensed Matter Bristol v. 15, n. 2, p. 121-132, 2003Bristol 2003Acesso online |
6 |
Material Type: Artigo
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Influence of illumination on the quantum mobility of a two-dimensional electron gas in Si 'sigma'-doped 'GaAs/In IND.0.15' 'Ga IND.0.85'As quantum wellsA Cavalheiro Euzi Conceicao Fernandes da Silva; A. A Quivy (Alain André); E K Takahashi; S Martini; M J da Silva; E A Meneses; J. R Leite (José Roberto)Journal of Physics: Condensed Matter Bristol v. 15, n. 2, p. 121-132, 2003Bristol 2003Acesso online |