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1
Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots
Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots
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Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots

C A Duarte Euzi Conceicao Fernandes da Silva; A. A Quivy (Alain André); M J da Silva; S Martini; J. R Leite (José Roberto); E A Meneses; E Lauretto

Journal of Applied Physics Woodbury v. 93, n. 10, p. 6279-6283, 2003

Woodbury 2003

Acesso online

2
Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots
Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots
Material Type:
Artigo 		Adicionar ao Meu Espaço

Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots

C A Duarte Euzi Conceicao Fernandes da Silva; A. A Quivy (Alain André); M J da Silva; S Martini; J. R Leite (José Roberto); E A Meneses; E Lauretto

Journal of Applied Physics Woodbury v. 93, n. 10, p. 6279-6283, 2003

Woodbury 2003

Acesso online

3
Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surface
Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surface
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Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surface

S Martini A. A Quivy (Alain André); T. E Lamas (Tomás Erikson); M J da Silva; Euzi Conceicao Fernandes da Silva; J. R Leite (José Roberto)

Journal of Crystal Growth Amsterdam v. 251, n. 1-4, p. 101-105, 2003

Amsterdam 2003

Acesso online

4
Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surface
Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surface
Material Type:
Artigo 		Adicionar ao Meu Espaço

Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surface

S Martini A. A Quivy (Alain André); T. E Lamas (Tomás Erikson); M J da Silva; Euzi Conceicao Fernandes da Silva; J. R Leite (José Roberto)

Journal of Crystal Growth Amsterdam v. 251, n. 1-4, p. 101-105, 2003

Amsterdam 2003

Acesso online

5
Influence of illumination on the quantum mobility of a two-dimensional electron gas in Si 'sigma'-doped 'GaAs/In IND.0.15' 'Ga IND.0.85'As quantum wells
Influence of illumination on the quantum mobility of a two-dimensional electron gas in Si 'sigma'-doped 'GaAs/In IND.0.15' 'Ga IND.0.85'As quantum wells
Material Type:
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Influence of illumination on the quantum mobility of a two-dimensional electron gas in Si 'sigma'-doped 'GaAs/In IND.0.15' 'Ga IND.0.85'As quantum wells

A Cavalheiro Euzi Conceicao Fernandes da Silva; A. A Quivy (Alain André); E K Takahashi; S Martini; M J da Silva; E A Meneses; J. R Leite (José Roberto)

Journal of Physics: Condensed Matter Bristol v. 15, n. 2, p. 121-132, 2003

Bristol 2003

Acesso online

6
Influence of illumination on the quantum mobility of a two-dimensional electron gas in Si 'sigma'-doped 'GaAs/In IND.0.15' 'Ga IND.0.85'As quantum wells
Influence of illumination on the quantum mobility of a two-dimensional electron gas in Si 'sigma'-doped 'GaAs/In IND.0.15' 'Ga IND.0.85'As quantum wells
Material Type:
Artigo 		Adicionar ao Meu Espaço

Influence of illumination on the quantum mobility of a two-dimensional electron gas in Si 'sigma'-doped 'GaAs/In IND.0.15' 'Ga IND.0.85'As quantum wells

A Cavalheiro Euzi Conceicao Fernandes da Silva; A. A Quivy (Alain André); E K Takahashi; S Martini; M J da Silva; E A Meneses; J. R Leite (José Roberto)

Journal of Physics: Condensed Matter Bristol v. 15, n. 2, p. 121-132, 2003

Bristol 2003

Acesso online

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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