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Nitrogen incorporation into boron carbide films deposited by dc-magnetron sputtering : film microstructure and tribological properties
Nitrogen incorporation into boron carbide films deposited by dc-magnetron sputtering : film microstructure and tribological properties
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Nitrogen incorporation into boron carbide films deposited by dc-magnetron sputtering : film microstructure and tribological properties

REIGADA, D. C ; FREIRE, F. L

Surface & coatings technology, 2001, Vol.142-44, p.889-893 [Periódico revisado por pares]

Lausanne: Elsevier

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2
Structural, mechanical, and nanoscale tribological properties of nitrogen-incorporated fluorine-carbon films
Structural, mechanical, and nanoscale tribological properties of nitrogen-incorporated fluorine-carbon films
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Structural, mechanical, and nanoscale tribological properties of nitrogen-incorporated fluorine-carbon films

MAIA DA COSTA, M. E. H ; SANCHEZ, C. M. T ; JACOBSOHN, L. G ; FREIRE, F. L

Thin solid films, 2005, Vol.482 (1-2), p.109-114 [Periódico revisado por pares]

Lausanne: Elsevier Science

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3
Amorphous hydrogenated carbon films deposited by PECVD: influence of the substrate temperature on film growth and microstructure
Amorphous hydrogenated carbon films deposited by PECVD: influence of the substrate temperature on film growth and microstructure
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Amorphous hydrogenated carbon films deposited by PECVD: influence of the substrate temperature on film growth and microstructure

CAPOTE, G ; PRIOLI, R ; JARDIM, P. M ; ZANATTA, A. R ; JACOBSOHN, L. G ; FREIRE, F. L

Journal of non-crystalline solids, 2004, Vol.338-40, p.503-508 [Periódico revisado por pares]

Amsterdam: Elsevier

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4
Characterization by ion beams of surfaces and interfaces of alternative materials for future microelectronic devices
Characterization by ion beams of surfaces and interfaces of alternative materials for future microelectronic devices
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Characterization by ion beams of surfaces and interfaces of alternative materials for future microelectronic devices

KRUG, C ; STEDILE, F. C ; RADTKE, C ; DA ROSA, E. B. O ; MORALS, J ; FREIRE, F. L ; BAUMVOL, I. J. R

Applied surface science, 2003, Vol.212-13, p.556-562 [Periódico revisado por pares]

Amsterdam: Elsevier Science

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5
Light-emitting porous silicon : a structural investigation by high spatial resolution Raman spectroscopy
Light-emitting porous silicon : a structural investigation by high spatial resolution Raman spectroscopy
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Light-emitting porous silicon : a structural investigation by high spatial resolution Raman spectroscopy

MARIOTTO, G ; ZIGLIO, F ; FREIRE, F. L

Journal of non-crystalline solids, 1995, Vol.192-93, p.253-257 [Periódico revisado por pares]

Amsterdam: Elsevier

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6
Deposition of Si-DLC films with high hardness, low stress and high deposition rates
Deposition of Si-DLC films with high hardness, low stress and high deposition rates
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Deposition of Si-DLC films with high hardness, low stress and high deposition rates

DAMASCENO, J. C ; CAMARGO, S. S ; FREIRE, F. L ; CARIUS, R

Surface & coatings technology, 2000, Vol.133-34, p.247-252 [Periódico revisado por pares]

Lausanne: Elsevier

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7
Amorphous hydrogenated carbon niytride films obtained by plasma-enhanced chemical vapour deposition
Amorphous hydrogenated carbon niytride films obtained by plasma-enhanced chemical vapour deposition
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Amorphous hydrogenated carbon niytride films obtained by plasma-enhanced chemical vapour deposition

FREIRE, F. L ; MARIOTTO, G ; ACHETE, C. A ; FRANCESCHINI, D. F

Surface & coatings technology, 1995, Vol.74-75 (1-3), p.382-386 [Periódico revisado por pares]

Lausanne: Elsevier

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8
Hydrogen diffusion in RF-sputtered a-Ge:H thin films
Hydrogen diffusion in RF-sputtered a-Ge:H thin films
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Hydrogen diffusion in RF-sputtered a-Ge:H thin films

GRAEFF, C. F. O ; FREIRE, F. L ; CHAMBOULEYRON, I

Journal of non-crystalline solids, 1991, Vol.137-38, p.41-44 [Periódico revisado por pares]

Amsterdam: Elsevier

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9
Effects of interfacial profiles on quantum levels in InxGa1-xAs/GaAs graded spherical quantum dots
Effects of interfacial profiles on quantum levels in InxGa1-xAs/GaAs graded spherical quantum dots
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Effects of interfacial profiles on quantum levels in InxGa1-xAs/GaAs graded spherical quantum dots

OLIVEIRA, C. L. N ; FREIRE, J. A. K ; FREIRE, V. N ; FARIAS, G. A

Applied surface science, 2004, Vol.237 (1-4), p.266-269 [Periódico revisado por pares]

Amsterdam: Elsevier Science

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10
Inhomogeneous broadening arising from interface fluctuations in strained InxGa1-xAs/GaAs and (InuGa1-uAs)ν(InP)1-ν/InP quantum wells
Inhomogeneous broadening arising from interface fluctuations in strained InxGa1-xAs/GaAs and (InuGa1-uAs)ν(InP)1-ν/InP quantum wells
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Inhomogeneous broadening arising from interface fluctuations in strained InxGa1-xAs/GaAs and (InuGa1-uAs)ν(InP)1-ν/InP quantum wells

OLIVEIRA, C. L. N ; FREIRE, J. A. K ; FREIRE, V. N ; FARIAS, G. A

Applied surface science, 2004, Vol.234 (1-4), p.38-44 [Periódico revisado por pares]

Amsterdam: Elsevier Science

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